Nanosecond pulser ADC system
    3.
    发明授权

    公开(公告)号:US11101108B2

    公开(公告)日:2021-08-24

    申请号:US16848830

    申请日:2020-04-14

    摘要: A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a nanosecond pulser having a nanosecond pulser input; a plurality of switches coupled with the nanosecond pulser input; one or more transformers coupled with the plurality of switches; and an output coupled with the one or more transformers and providing a high voltage waveform with a amplitude greater than 2 kV and a frequency greater than 1 kHz based on the nanosecond pulser input. The nanosecond pulser system may also include a control module coupled with the nanosecond pulser input; and an control system coupled with the nanosecond pulser at a point between the transformer and the output, the control system providing waveform data regarding an high voltage waveform produced at the point between the transformer and the output.

    Bipolar high voltage pulser
    4.
    发明授权

    公开(公告)号:US11824542B1

    公开(公告)日:2023-11-21

    申请号:US17853891

    申请日:2022-06-29

    IPC分类号: H03K3/57 H02M3/07

    CPC分类号: H03K3/57 H02M3/07

    摘要: A bipolar high voltage bipolar pulsing power supply is disclosed that can produce high voltage bipolar pulses with a positive high voltage pulse greater than about 2 kV followed by a negative high voltage pulse less than about −2 kV with a positive to negative dwell period between the positive high voltage pulse and the negative high voltage pulse. A high voltage bipolar pulsing power supply, for example, can reproduce high voltage pulses with a pulse repetition rate greater than about 10 kHz.

    Precise plasma control system
    6.
    发明授权

    公开(公告)号:US10903047B2

    公开(公告)日:2021-01-26

    申请号:US16779270

    申请日:2020-01-31

    IPC分类号: H01J37/32

    摘要: Some embodiments include a plasma system comprising: a plasma chamber, an RF plasma generator, a bias generator, and a controller. The RF plasma generator may be electrically coupled with the plasma chamber and may produce a plurality of RF bursts, each of the plurality of RF bursts including RF waveforms, each of the plurality of RF bursts having an RF burst turn on time and an RF burst turn off time. The bias generator may be electrically coupled with the plasma chamber and may produce a plurality of bias bursts, each of the plurality of bias bursts including bias pulses, each of the plurality of bias bursts having an bias burst turn on time and an bias burst turn off time. In some embodiments the controller is in communication with the RF plasma generator and the bias generator that controls the timing of various bursts or waveforms.

    NANOSECOND PULSER ADC SYSTEM
    7.
    发明申请

    公开(公告)号:US20200244254A1

    公开(公告)日:2020-07-30

    申请号:US16848830

    申请日:2020-04-14

    摘要: A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a nanosecond pulser having a nanosecond pulser input; a plurality of switches coupled with the nanosecond pulser input; one or more transformers coupled with the plurality of switches; and an output coupled with the one or more transformers and providing a high voltage waveform with a amplitude greater than 2 kV and a frequency greater than 1 kHz based on the nanosecond pulser input. The nanosecond pulser system may also include a control module coupled with the nanosecond pulser input; and an control system coupled with the nanosecond pulser at a point between the transformer and the output, the control system providing waveform data regarding an high voltage waveform produced at the point between the transformer and the output.

    PRECISE PLASMA CONTROL SYSTEM
    8.
    发明申请

    公开(公告)号:US20200168437A1

    公开(公告)日:2020-05-28

    申请号:US16779270

    申请日:2020-01-31

    IPC分类号: H01J37/32

    摘要: Some embodiments include a plasma system comprising: a plasma chamber, an RF plasma generator, a bias generator, and a controller. The RF plasma generator may be electrically coupled with the plasma chamber and may produce a plurality of RF bursts, each of the plurality of RF bursts including RF waveforms, each of the plurality of RF bursts having an RF burst turn on time and an RF burst turn off time. The bias generator may be electrically coupled with the plasma chamber and may produce a plurality of bias bursts, each of the plurality of bias bursts including bias pulses, each of the plurality of bias bursts having an bias burst turn on time and an bias burst turn off time. In some embodiments the controller is in communication with the RF plasma generator and the bias generator that controls the timing of various bursts or waveforms.

    Precise plasma control system
    10.
    发明授权

    公开(公告)号:US11532457B2

    公开(公告)日:2022-12-20

    申请号:US17234773

    申请日:2021-04-19

    摘要: Some embodiments include a pulsing power supply comprising a power supply and a transformer comprising: a transformer core; a primary winding wrapped around a portion of the transformer core, the primary winding having a first lead and a second lead; and a secondary winding wrapped around a portion of the transformer core. The pulsing power supply may also include a first switch electrically connected with the first lead of the primary winding and the power supply; and a second switch electrically connected with the second lead of the primary winding and the power supply, wherein the first switch and the second switch are opened and closed at different time intervals. The pulsing power supply may also include a pulsing output electrically coupled with the secondary winding of the transformer that outputs pulses having a voltage greater than about 2 kV and with pulse frequencies greater than 1 kHz.