OPTICAL PHASE DIVERSITY RECEIVER FOR COHERENT OPTICAL COMMUNICATION
    3.
    发明申请
    OPTICAL PHASE DIVERSITY RECEIVER FOR COHERENT OPTICAL COMMUNICATION 有权
    用于相干光通信的光相位分集接收机

    公开(公告)号:US20160377813A1

    公开(公告)日:2016-12-29

    申请号:US15170626

    申请日:2016-06-01

    Abstract: An optical phase diversity receiver may include: a diffraction grating including grating surfaces; a first input waveguide to which a first optical signal is inputted; a second input waveguide to which a second optical signal is inputted; and a slab waveguide including an input terminal optically coupled with the first and second input waveguides, and an output terminal provided at a position at which optical signals reflected by the diffraction grating reach the slab waveguide. Every determined number of grating surfaces are chirped in an identical manner. The slab waveguide is configured to guide the first and the second optical signals to the diffraction grating and guide the optical signals reflected by the diffraction grating to the output terminal. The grating surfaces are configured such that each of the optical signals reflected by the diffraction grating is divided into the predetermined number by optical power distribution.

    Abstract translation: 光相位分集接收器可以包括:包括光栅表面的衍射光栅; 输入第一光信号的第一输入波导; 输入第二光信号的第二输入波导; 以及平板波导,包括与第一和第二输入波导光耦合的输入端,以及设置在由衍射光栅反射的光信号到达平板波导的位置的输出端。 每个确定数量的光栅表面以相同的方式被啁啾。 平板波导被配置为将第一和第二光信号引导到衍射光栅,并将由衍射光栅反射的光信号引导到输出端。 光栅表面被配置为使得由衍射光栅反射的每个光信号通过光功率分布被划分成预定数量。

    RIDGE WAVEGUIDE SEMICONDUCTOR LASER DIODE AND METHOD FOR MANUFACTURING THE SAME
    4.
    发明申请
    RIDGE WAVEGUIDE SEMICONDUCTOR LASER DIODE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    RIDGE波导半导体激光二极管及其制造方法

    公开(公告)号:US20140328363A1

    公开(公告)日:2014-11-06

    申请号:US14147923

    申请日:2014-01-06

    Abstract: Provided is a method of manufacturing a ridge waveguide type semiconductor laser diode, the method including sequentially forming, on a substrate, a lower clad layer, an active layer, a first upper clad layer, and a second upper clad layer; forming an insulating mask on the second upper clad layer; wet-etching the second upper clad layer by using the insulating mask to form channels passing through the second upper clad layer and a ridge between the channels; and performing dry-etching by using the insulating mask to form trenches that are extended from the channels and pass through the first upper clad layer.

    Abstract translation: 提供一种制造脊波导型半导体激光二极管的方法,该方法包括在基底上顺序地形成下包层,有源层,第一上覆层和第二上覆层; 在所述第二上包覆层上形成绝缘掩模; 通过使用绝缘掩模对第二上覆层进行湿式蚀刻,以形成通过第二上覆层的沟道和通道之间的脊; 并通过使用绝缘掩模进行干蚀刻以形成从沟道延伸并穿过第一上包层的沟槽。

    LASER DIODE AND MANUFACTURING METHOD OF THE SAME

    公开(公告)号:US20220255291A1

    公开(公告)日:2022-08-11

    申请号:US17561212

    申请日:2021-12-23

    Abstract: Provided is a laser diode and a method for manufacturing the same. The diode includes a substrate including a DBR region having a channel hole, an active region, and a phase shift region, an optical waveguide provided on the substrate and extending from the active region to the DBR region, a lower insulation layer disposed on the optical waveguide, upper electrodes disposed on the lower insulation layer, and a heat blocking layer disposed in the channel hole of the DBR region and thermally separating the optical waveguide from the substrate.

    LASER DEVICE
    6.
    发明申请

    公开(公告)号:US20210288463A1

    公开(公告)日:2021-09-16

    申请号:US17182976

    申请日:2021-02-23

    Abstract: Provided is a laser device according to embodiments of the inventive concept comprising a substrate including a gain region, a phase control region, and a tuning region arranged along a first direction, the substrate having an air gap which extends from the phase control region to the tuning region, an upper clad layer on the substrate, a waveguide structure extending in the first direction between the upper clad layer and the substrate, a first upper electrode disposed on the upper surface of the upper clad layer of the tuning region, and a lower electrode disposed on a lower surface of the substrate and extending from the gain region to the tuning region, wherein the air gap may have a larger width than the waveguide in a second direction crossing the first direction.

    DISTRIBUTED BRAGG REFLECTOR RIDGE LASER DIODE AND FABRICATING METHOD THEREOF
    9.
    发明申请
    DISTRIBUTED BRAGG REFLECTOR RIDGE LASER DIODE AND FABRICATING METHOD THEREOF 审中-公开
    分布式BRAGG反射器RIDGE激光二极管及其制造方法

    公开(公告)号:US20150349491A1

    公开(公告)日:2015-12-03

    申请号:US14601780

    申请日:2015-01-21

    CPC classification number: H01S5/125 H01S5/0425 H01S5/06256 H01S5/162 H01S5/22

    Abstract: Provided herein is a distributed bragg reflector ridge laser diode that is capable of easily embodying a diffraction grating and that minimizes an optical absorption effect on a DBR area, and a fabricating method thereof, the distributed bragg reflector ridge laser diode including a lower clad layer formed on top of a substrate; an active core zone formed on top of the lower clad layer; a plurality of ridge wave guides formed on top of the active core zone such that they are spaced from one another and extend in an axial direction; and a diffraction grating formed on top of the active core zone and between the plurality of ridge wave guides.

    Abstract translation: 本发明提供一种能够容易地体现衍射光栅并且最小化对DBR区域的光吸收效果的分布式布拉格反射器脊激光二极管及其制造方法,所述分布式布拉格反射器脊激光二极管包括形成的下包层 在基材的顶部; 形成在下包层顶部的活性芯区; 多个脊形波导形成在活性芯区的顶部,使得它们彼此间隔开并沿轴向方向延伸; 以及形成在有源芯区域的顶部和多个脊波导之间的衍射光栅。

    OPTICAL DEVICE AND DRIVING METHOD THEREOF

    公开(公告)号:US20210149226A1

    公开(公告)日:2021-05-20

    申请号:US17159947

    申请日:2021-01-27

    Abstract: An optical device according to the embodiment of the inventive concept includes a waveguide path including a light generation region, a wavelength variable region, and a light modulation region, a first light waveguide layer provided in the light generation region to generate light, a second light waveguide layer provided in the wavelength variable region and connected to the first light waveguide layer, a ring-shaped third light waveguide layer provided in the light modulation region and connected to the second light waveguide layer, and first and second light modulation electrodes spaced apart from each other with the light modulation region therebetween. Here, the first light modulation electrode, the third light waveguide layer, and the second light modulation electrode vertically overlap each other.

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