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公开(公告)号:US12237170B2
公开(公告)日:2025-02-25
申请号:US18374637
申请日:2023-09-28
Applicant: ENTEGRIS, INC.
Inventor: Sangbum Han , Seobong Chang , Bryan C. Hendrix , Jaeeon Park , Thomas H. Baum
IPC: H01L21/285 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18
Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
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公开(公告)号:US20180158687A1
公开(公告)日:2018-06-07
申请号:US15819620
申请日:2017-11-21
Applicant: Entegris, Inc.
Inventor: Sangbum Han , Seobong Chang , Jaeeon Park , Bryan Clark Hendrix , Thomas H. Baum
IPC: H01L21/285 , C23C16/06
CPC classification number: H01L21/28556 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18
Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
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公开(公告)号:US20240096631A1
公开(公告)日:2024-03-21
申请号:US18374637
申请日:2023-09-28
Applicant: ENTEGRIS, INC.
Inventor: Sangbum Han , Seobong Chang , Bryan C. Hendrix , Jaeeon Park , Thomas H. Baum
IPC: H01L21/285 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18
CPC classification number: H01L21/28556 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18
Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
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公开(公告)号:US11804375B2
公开(公告)日:2023-10-31
申请号:US16952985
申请日:2020-11-19
Applicant: ENTEGRIS, INC.
Inventor: Sangbum Han , Seobong Chang , Bryan C. Hendrix , Jaeeon Park , Thomas H. Baum
IPC: H01L21/285 , C23C16/06 , C23C16/16 , C07F15/06 , C23C16/18
CPC classification number: H01L21/28556 , C07F15/06 , C23C16/06 , C23C16/16 , C23C16/18
Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
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