公开(公告)号：US10453744B2

公开(公告)日：2019-10-22

申请号：US15958568

申请日：2018-04-20

Applicant: Entegris, Inc.

Inventor： Shuang Meng ,  Richard Ulrich Assion ,  Thomas H. Baum ,  Bryan Clark Hendrix

IPC: H01L21/768 ,  C23C16/40 ,  C23C16/02 ,  H01L21/285 ,  C23C16/455 ,  H01L21/3205 ,  C23C16/14 ,  C23C16/28 ,  H01L21/28

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

公开(公告)号：US20230187202A1

公开(公告)日：2023-06-15

申请号：US18079318

申请日：2022-12-12

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan Clark Hendrix ,  Eric Condo

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L21/02208 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/02315 ,  C23C16/345 ,  C23C16/50 ,  C23C16/4554

Abstract: The use of selective deposition of silicon nitride can eliminate conventional patterning steps by allowing silicon nitride to be deposited only in selected and desired areas. Using a silicon iodide precursor alternately with a thermal nitrogen source in an ALD or pulsed CVD mode, silicon nitride can be deposited preferentially on a surface such as silicon nitride, silicon dioxide, germanium oxide, SiCO, SiOF, silicon carbide, silicon oxynitride, and low k substrates, while exhibiting very little deposition on exposed surfaces such as titanium nitride, tantalum nitride, aluminum nitride, hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, tantalum oxide, niobium oxide, lanthanum oxide, yttrium oxide, magnesium oxide, calcium oxide, and strontium oxide.

公开(公告)号：US20180261503A1

公开(公告)日：2018-09-13

申请号：US15958568

申请日：2018-04-20

Applicant: Entegris, Inc.

Inventor： Shuang Meng ,  Richard Ulrich Assion ,  Thomas H. Baum ,  Bryan Clark Hendrix

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40

CPC classification number: H01L21/76876 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/28 ,  C23C16/405 ,  C23C16/45527 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76853 ,  H01L2221/1089

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

公开(公告)号：US20180142345A1

公开(公告)日：2018-05-24

申请号：US15820640

申请日：2017-11-22

Applicant: Entegris, Inc.

Inventor： Shuang Meng ,  Richard Ulrich Assion ,  Thomas H. Baum ,  Bryan Clark Hendrix

IPC: C23C16/06 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/06 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/08 ,  H01L21/28061 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53257 ,  H01L2221/1089

Abstract: The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoCl5 or MoOCl4, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

公开(公告)号：US20240170290A1

公开(公告)日：2024-05-23

申请号：US18387228

申请日：2023-11-06

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Shawn Duc Nguyen ,  Bryan Clark Hendrix

IPC: H01L21/28 ,  C23C16/02 ,  C23C16/08 ,  C23C16/42

CPC classification number: H01L21/28079 ,  C23C16/0227 ,  C23C16/08 ,  C23C16/42 ,  H01L29/775

Abstract: Methods for selective deposition of precursor materials and related devices are provided. The methods comprise obtaining a structure. The structure comprises a non-dielectric material, and a dielectric material. The methods comprise contacting the structure with a molybdenum precursor under conditions, so as to obtain a molybdenum material on at least a portion of the non-dielectric material. The molybdenum material is not deposited on the dielectric material under the conditions.

公开(公告)号：US20230245894A1

公开(公告)日：2023-08-03

申请号：US18102641

申请日：2023-01-27

Applicant: ENTEGRIS, INC.

Inventor： Philip S.H. Chen ,  Bryan Clark Hendrix ,  Thomas M. Cameron

IPC: H01L21/285 ,  C23C16/14

CPC classification number: H01L21/28568 ,  C23C16/14 ,  H01L21/76876

Abstract: Provided is a process comprising a selective ruthenium seed layer deposition with oxygen-free ruthenium precursors, followed by bulk deposition of metal-containing precursors such as tungsten, molybdenum, cobalt, ruthenium, and/or copper-containing precursors. The ruthenium seed layer deposition is highly selective for the conducting portions of the microelectronic device substrate while minimizing deposition onto the insulating surfaces of the microelectronic device substrate. In certain embodiments, the conducting portions of the substrate is chosen from titanium nitride, tungsten nitride, tantalum nitride, tungsten, cobalt, molybdenum, aluminum, and copper.

公开(公告)号：US20240190718A1

公开(公告)日：2024-06-13

申请号：US18533684

申请日：2023-12-08

Applicant: ENTEGRIS, INC.

Inventor： Loren Press ,  Michael Watson ,  Benjamin R. Garrett ,  Bryan Clark Hendrix ,  Cristian Ocampo ,  Juan Valdez ,  Robert L. Wright, JR.

IPC: C01G39/04

CPC classification number: C01G39/04

Abstract: Molybdenum precursors with high purity and methods for purifying molybdenum precursors are provided. A method comprises obtaining a first vessel comprising a solid reagent; vaporizing at least a portion of the solid reagent to produce a vapor comprising a MoCl5 vapor and a molybdenum impurity vapor; flowing at least a portion of the MoCl5 vapor and at least a portion of the molybdenum impurity vapor to a second vessel; condensing at least a portion of the MoCl5 vapor in the second vessel to separate the MoCl5 from the molybdenum impurity; and removing at least a portion of the molybdenum impurity vapor from the second vessel to obtain a MoCl5 precursor.

公开(公告)号：US20180158687A1

公开(公告)日：2018-06-07

申请号：US15819620

申请日：2017-11-21

Applicant: Entegris, Inc.

Inventor： Sangbum Han ,  Seobong Chang ,  Jaeeon Park ,  Bryan Clark Hendrix ,  Thomas H. Baum

IPC: H01L21/285 ,  C23C16/06

CPC classification number: H01L21/28556 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.