公开(公告)号：US12237170B2

公开(公告)日：2025-02-25

申请号：US18374637

申请日：2023-09-28

Applicant: ENTEGRIS, INC.

Inventor： Sangbum Han ,  Seobong Chang ,  Bryan C. Hendrix ,  Jaeeon Park ,  Thomas H. Baum

IPC: H01L21/285 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

公开(公告)号：US20230088079A1

公开(公告)日：2023-03-23

申请号：US17860177

申请日：2022-07-08

Applicant: ENTEGRIS, INC.

Inventor： SangJin Lee ,  MinSeok Ryu ,  Sangbum Han ,  SeongCheol Kim ,  YoonHae Kim ,  KieJin Park ,  YeRim Yeon ,  Sungsil Cho ,  HwanSoo Kim ,  JoongKi CHOI

IPC: C07F7/10 ,  H01L21/02 ,  C23C16/455

Abstract: Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.

公开(公告)号：US20240096631A1

公开(公告)日：2024-03-21

申请号：US18374637

申请日：2023-09-28

Applicant: ENTEGRIS, INC.

Inventor： Sangbum Han ,  Seobong Chang ,  Bryan C. Hendrix ,  Jaeeon Park ,  Thomas H. Baum

IPC: H01L21/285 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

CPC classification number: H01L21/28556 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

公开(公告)号：US11804375B2

公开(公告)日：2023-10-31

申请号：US16952985

申请日：2020-11-19

Applicant: ENTEGRIS, INC.

Inventor： Sangbum Han ,  Seobong Chang ,  Bryan C. Hendrix ,  Jaeeon Park ,  Thomas H. Baum

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/16 ,  C07F15/06 ,  C23C16/18

CPC classification number: H01L21/28556 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

公开(公告)号：US20240101583A1

公开(公告)日：2024-03-28

申请号：US18510436

申请日：2023-11-15

Applicant: Entegris, Inc.

Inventor： MinSeok Ryu ,  YeRim Yeon ,  JoongKi Choi ,  JongWon Nam ,  Sangbum Han

IPC: C07F7/10

CPC classification number: C07F7/10 ,  C23C16/325

Abstract: Some embodiments relate to a precursor comprising a precursor for vapor deposition. The precursor comprises an aliphatic hydrocarbon and at least one disilylamine group. The at least one disilylamine group is attached to the aliphatic hydrocarbon. The at least one disilylamine group does not comprise a silanide group. Some embodiments relate to a method for making the precursor. The method comprises reacting a polyamine compound and a silylhalide compound in a presence of a base to form a precursor useful for vapor deposition. Some embodiments relate to a method for forming a silicon-containing film using the precursor.

公开(公告)号：US20180158687A1

公开(公告)日：2018-06-07

申请号：US15819620

申请日：2017-11-21

Applicant: Entegris, Inc.

Inventor： Sangbum Han ,  Seobong Chang ,  Jaeeon Park ,  Bryan Clark Hendrix ,  Thomas H. Baum

IPC: H01L21/285 ,  C23C16/06

CPC classification number: H01L21/28556 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.