Method for stabilizing high pressure oxidation of a semiconductor device
    1.
    发明申请
    Method for stabilizing high pressure oxidation of a semiconductor device 失效
    稳定半导体器件的高压氧化的方法

    公开(公告)号:US20060035473A1

    公开(公告)日:2006-02-16

    申请号:US11251973

    申请日:2005-10-17

    IPC分类号: H01L21/31

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用,这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Apparatus for stabilizing high pressure oxidation of a semiconductor device
    2.
    发明申请
    Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的装置

    公开(公告)号:US20050028936A1

    公开(公告)日:2005-02-10

    申请号:US10933890

    申请日:2004-09-02

    IPC分类号: C30B33/00 H01L21/316 C23F1/00

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N20 and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于在五(5)大气压至二十五(25)个大气压二氧化氮和600℃至750℃的温度范围的环境中,这是导致N2O变得超临界的条件。 通过防止N2O变得超临界,可以控制反应,防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Method for stabilizing high pressure oxidation of a semiconductor device
    3.
    发明申请
    Method for stabilizing high pressure oxidation of a semiconductor device 审中-公开
    稳定半导体器件的高压氧化的方法

    公开(公告)号:US20050279283A1

    公开(公告)日:2005-12-22

    申请号:US11210607

    申请日:2005-08-23

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用,这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Apparatus for stabilizing high pressure oxidation of a semiconductor device
    5.
    发明授权
    Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的装置

    公开(公告)号:US07279435B2

    公开(公告)日:2007-10-09

    申请号:US10933890

    申请日:2004-09-02

    IPC分类号: H01L21/469 H01L21/42

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于五(5)大气压至二十五(25)个大气压N 2 O的环境和600℃至750℃的温度范围内,这是 导致N< 2> O超越关键的条件。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Method and apparatus for stabilizing high pressure oxidation of a semiconductor device
    6.
    发明授权
    Method and apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的方法和装置

    公开(公告)号:US06291364B1

    公开(公告)日:2001-09-18

    申请号:US09386941

    申请日:1999-08-31

    IPC分类号: H01L2631

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于5气压至25气氛N2O和600至750℃温度范围的环境中,这是导致N2O超临界的条件。 通过防止N2O变得超临界,可以控制反应,防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Apparatus for stabilizing high pressure oxidation of a semiconductor device

    公开(公告)号:US06827790B2

    公开(公告)日:2004-12-07

    申请号:US09798445

    申请日:2001-03-02

    IPC分类号: C23C1600

    摘要: a method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, rhodium, nickel, silver, and gold.

    Method for stabilizing high pressure oxidation of a semiconductor device
    8.
    发明授权
    Method for stabilizing high pressure oxidation of a semiconductor device 有权
    稳定半导体器件的高压氧化的方法

    公开(公告)号:US06596651B2

    公开(公告)日:2003-07-22

    申请号:US10212892

    申请日:2002-08-05

    IPC分类号: H01L2131

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内高压氧化阶段防止N2O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N2O。 该催化剂用于五个大气压和25个大气压N 2 O之间的环境中,并且温度范围为600℃至750℃,这是导致N 2 O变得超临界的条件。 通过防止N2O变得超临界,可以控制反应,防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Method for stabilizing high pressure oxidation of a semiconductor device
    9.
    发明授权
    Method for stabilizing high pressure oxidation of a semiconductor device 失效
    稳定半导体器件的高压氧化的方法

    公开(公告)号:US07410911B2

    公开(公告)日:2008-08-12

    申请号:US11251973

    申请日:2005-10-17

    IPC分类号: H01L21/324

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmospheres and 25 atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂在五个大气压和25个大气压N 2 O 2的温度范围和600℃至750℃的温度范围内使用,这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。

    Apparatus for stabilizing high pressure oxidation of a semiconductor device
    10.
    发明授权
    Apparatus for stabilizing high pressure oxidation of a semiconductor device 有权
    用于稳定半导体器件的高压氧化的装置

    公开(公告)号:US07282457B2

    公开(公告)日:2007-10-16

    申请号:US09798445

    申请日:2001-03-02

    IPC分类号: H01L21/31 H01L21/469

    摘要: A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five atmosphere to 25 atmosphere N2O and a temperature range of 600° to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.

    摘要翻译: 公开了一种在高压氧化炉内的高压氧化阶段防止N 2 O变得超临界的方法和装置。 该方法和装置利用催化剂在进入高压氧化炉时催化分解N 2 O 2。 该催化剂用于5个气氛至25个气氛N 2 O 2和600℃至750℃的温度范围的环境中,这是导致N 2 O超级关键。 通过防止N 2 O 2变得超临界,控制反应以防止温度和压力尖峰。 催化剂可以选自贵金属过渡金属及其氧化物。 该组可以包括钯,铂,铱,铑,镍,银和金。