公开(公告)号：US20220013674A1

公开(公告)日：2022-01-13

申请号：US17279254

申请日：2019-09-23

Applicant: First Solar, Inc.

Inventor： Paulina Bourgeois ,  Robert Clark-Phelps ,  Qi Fang ,  Jing Guo ,  Gopal Mor ,  Rui Shao

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/054 ,  H01L31/073

Abstract: According to the embodiments provided herein, a method for sputtering a TCO material onto a substrate includes process conditions that produce a textured topography at the interfaces of various layers. The textured topography can include an average roughness from about 5 to about 40 nm. The process conditions can include providing oxygen in the sputtering environment at a flow rate of from 0 to about 30 sccm; or heating the substrate to at least 200; or increasing the magnetic field strength to above 40 mT. The textured topography creates interfacial transition areas which have hybrid physical properties compared to their constituent materials.

公开(公告)号：US10529883B2

公开(公告)日：2020-01-07

申请号：US14531425

申请日：2014-11-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20180083145A1

公开(公告)日：2018-03-22

申请号：US15708254

申请日：2017-09-19

Applicant: First Solar, Inc.

Inventor： Brian Cohen ,  David Hwang ,  Mark Lewis ,  Gopal Mor ,  Nathan Martin Schuh ,  Frank Xia ,  Yu Yang ,  Zhibo Zhao

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02168 ,  G02B1/118 ,  G02B2207/107 ,  G02B2207/109 ,  H01L31/048 ,  H01L31/18

Abstract: Methods of curing anti-reflective coatings, and photovoltaic modules produced using the methods, are described. The methods can include liquid metal curing, plasma curing, air knife curing, and flame curing.

公开(公告)号：US20160126395A1

公开(公告)日：2016-05-05

申请号：US14531425

申请日：2014-11-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract translation: 光电器件包括衬底结构和至少一个含硒层，例如CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSeTe层。 该方法还可以包括控制含Se层的厚度范围。

公开(公告)号：US20240088319A1

公开(公告)日：2024-03-14

申请号：US18507816

申请日：2023-11-13

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US11817516B2

公开(公告)日：2023-11-14

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

CPC classification number: H01L31/073 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20200058818A1

公开(公告)日：2020-02-20

申请号：US16664737

申请日：2019-10-25

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/0224

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US11450778B2

公开(公告)日：2022-09-20

申请号：US16305455

申请日：2017-05-31

Applicant: First Solar, Inc.

Inventor： Kenneth Ring ,  William H. Huber ,  Hongying Peng ,  Markus Gloeckler ,  Gopal Mor ,  Feng Liao ,  Zhibo Zhao ,  Andrei Los

IPC: H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

公开(公告)号：US10461207B2

公开(公告)日：2019-10-29

申请号：US14602340

申请日：2015-01-22

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/18 ,  H01L31/20

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

公开(公告)号：US20160126396A1

公开(公告)日：2016-05-05

申请号：US14602340

申请日：2015-01-22

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Markus Gloeckler ,  Feng Liao ,  Andrei Los ,  Dan Mao ,  Benjamin Milliron ,  Gopal Mor ,  Rick Powell ,  Kenneth Ring ,  Aaron Roggelin ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0224

CPC classification number: H01L31/073 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/1828 ,  H01L31/1832 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/208

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.