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公开(公告)号：US07687301B2
公开(公告)日：2010-03-30
申请号：US12015271
申请日：2008-01-16
IPC分类号： H01L21/00
CPC分类号： G02B6/4214 , G02B6/136 , G02B6/4202
摘要： A process for manufacturing an integrated device includes the steps of: providing a silicon substrate on which a silicon dioxide structure is arranged and forming a trench having first and second essentially vertical walls relative to the substrate in the structure by means of anisotropic-type etching. A concavity having a sloped wall relative to the substrate is formed by isotropic-type etching which removes the second wall so that the concavity is open to the trench and the sloped wall faces the first wall.
摘要翻译： 一种用于制造集成器件的工艺包括以下步骤：提供硅衬底，在衬底上布置二氧化硅结构，并通过各向异性蚀刻形成具有相对于衬底的第一和第二基本上垂直的壁的沟槽。 通过各向同性型蚀刻形成具有相对于基板的倾斜壁的凹面，其移除第二壁，使得凹部对沟槽开放，并且倾斜壁面向第一壁。
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公开(公告)号：US20080213934A1
公开(公告)日：2008-09-04
申请号：US12015271
申请日：2008-01-16
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： G02B6/4214 , G02B6/136 , G02B6/4202
摘要： A process for manufacturing an integrated device includes the steps of: providing a silicon substrate on which a silicon dioxide structure is arranged; and forming a trench having first and second essentially vertical walls relative to the substrate in the structure by means of anisotropic-type etching. A concavity having a sloped wall relative to the substrate is formed by isotropic-type etching which removes the second wall so that the concavity is open to the trench and the sloped wall faces the first wall.
摘要翻译： 制造集成器件的方法包括以下步骤：提供其上布置有二氧化硅结构的硅衬底; 以及通过各向异性蚀刻在所述结构中形成具有相对于所述衬底的第一和第二基本上垂直的壁的沟槽。 通过各向同性型蚀刻形成具有相对于基板的倾斜壁的凹面，其移除第二壁，使得凹部对沟槽开放，并且倾斜壁面向第一壁。
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3.发明授权Method for manufacturing encapsulated opto-electronic devices and encapsulated device thus obtained 有权制造如此获得的封装光电器件和封装器件的方法公开(公告)号：US07141871B2
公开(公告)日：2006-11-28
申请号：US10924014
申请日：2004-08-23
IPC分类号： H01L23/02
CPC分类号： G02B6/4228 , H01S5/02252 , H01S5/02272 , H01S5/02276 , H01S5/02284 , H01S5/02415 , H01S5/0683
摘要： A packaging structure for optoelectronic components is formed by a first body, of semiconductor material, and a second body, of semiconductor material, fixed to a first face of said first body. A through window is formed in the second body and exposes a portion of the first face of the first body, whereon at least one optoelectronic component is fixed. Through connection regions extend through the first body and are in electrical contact with the optoelectronic component. The through connection regions are insulated from the rest of the first body via through insulation regions. Contact regions are arranged on the bottom face of the first body and are connected to said optoelectronic component via the through connection regions.
摘要翻译： 用于光电子部件的封装结构由半导体材料的第一主体和半导体材料的第二主体形成，固定到所述第一主体的第一面。 在第二主体中形成通孔，并暴露出第一主体的第一面的一部分，其中固定有至少一个光电子部件。 通过连接区域延伸穿过第一主体并且与光电子部件电接触。 通过连接区域经由绝缘区域与第一体的其余部分绝缘。 接触区域布置在第一主体的底面上，并且经由贯穿连接区域连接到所述光电子部件。
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公开(公告)号：US07998356B2
公开(公告)日：2011-08-16
申请号：US12015338
申请日：2008-01-16
IPC分类号： B29D11/00
CPC分类号： B29D11/00673 , G02B6/1221 , G02B6/4214
摘要： The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.
摘要翻译： 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构，该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽，所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口，以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻，以从所述暴露的二氧化硅开始，从所述多层结构二氧化硅移除所述多层结构，直到在所述多层结构中形成具有第一壁的凹部，所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸，并且包括入口/出口。
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公开(公告)号：US20090308839A1
公开(公告)日：2009-12-17
申请号：US12015338
申请日：2008-01-16
IPC分类号： B29D11/00
CPC分类号： B29D11/00673 , G02B6/1221 , G02B6/4214
摘要： The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate. The method further involves forming a coating layer of the side walls and the bottom wall of the trench; defining an opening in the bottom wall by at least partially removing the coating layer in order to expose the lower silicon dioxide of the multilayer structure; performing an isotropic etch through said opening in order to remove, starting from the exposed silicon dioxide, the multilayer structure silicon dioxide until forming a recess in the multilayer structure having a first wall at least one essentially planar portion inclined relative to the substrate. Such inclined portion extends at least partially in the first region, and includes the inlet/outlet port.
摘要翻译： 本发明涉及一种用于制造集成光学装置的方法。 该方法包括在硅衬底上形成二氧化硅多层结构，该硅衬底在第一区域中包含光学器件的波导的芯层。 核心包括电磁辐射入口/出口。 通过各向异性蚀刻形成与所述第一区相邻的所述多层结构的第二区域中的沟槽，所述沟槽包括侧壁和与所述基板间隔开的底壁。 该方法还包括形成沟槽的侧壁和底壁的涂层; 通过至少部分地去除所述涂层来限定所述底壁中的开口，以暴露所述多层结构的较低二氧化硅; 通过所述开口执行各向同性蚀刻，以从所述暴露的二氧化硅开始，从所述多层结构二氧化硅移除所述多层结构，直到在所述多层结构中形成具有第一壁的凹部，所述第一壁至少一个相对于所述衬底倾斜的基本上平面的部分。 这种倾斜部分至少部分地在第一区域中延伸，并且包括入口/出口。
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6.发明申请Method for manufacturing encapsulated opto-electronic devices and encapsulated device thus obtained 有权制造如此获得的封装光电器件和封装器件的方法公开(公告)号：US20050093013A1
公开(公告)日：2005-05-05
申请号：US10924014
申请日：2004-08-23
CPC分类号： G02B6/4228 , H01S5/02252 , H01S5/02272 , H01S5/02276 , H01S5/02284 , H01S5/02415 , H01S5/0683
摘要： A packaging structure for optoelectronic components is formed by a first body, of semiconductor material, and a second body, of semiconductor material, fixed to a first face of said first body. A through window is formed in the second body and exposes a portion of the first face of the first body, whereon at least one optoelectronic component is fixed. Through connection regions extend through the first body and are in electrical contact with the optoelectronic component. The through connection regions are insulated from the rest of the first body via through insulation regions. Contact regions are arranged on the bottom face of the first body and are connected to said optoelectronic component via the through connection regions.
摘要翻译： 用于光电子部件的封装结构由半导体材料的第一主体和半导体材料的第二主体形成，固定到所述第一主体的第一面。 在第二主体中形成通孔，并暴露出第一主体的第一面的一部分，其中固定有至少一个光电子部件。 通过连接区域延伸穿过第一主体并且与光电子部件电接触。 通过连接区域经由绝缘区域与第一体的其余部分绝缘。 接触区域布置在第一主体的底面上，并且经由贯穿连接区域连接到所述光电子部件。
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公开(公告)号：US08499613B2
公开(公告)日：2013-08-06
申请号：US13016086
申请日：2011-01-28
申请人： Federico Giovanni Ziglioli , Amedeo Maierna , Flavio Francesco Villa , Ubaldo Mastromatteo , Gabriele Barlocchi
发明人： Federico Giovanni Ziglioli , Amedeo Maierna , Flavio Francesco Villa , Ubaldo Mastromatteo , Gabriele Barlocchi
IPC分类号： G01N7/04
CPC分类号： G01N33/0009
摘要： A cartridge-like chemical sensor is formed by a housing having a base and a cover fixed to the base and provided with an input opening, an output hole and a channel for a gas to be analyzed. The channel extends in the cover between the input opening and the output hole and faces a printed circuit board carrying an integrated circuit having a sensitive region open toward the channel and of a material capable to bind with target chemicals in the gas to be analyzed. A fan is arranged in the housing, downstream of the integrated device, for sucking the gas after being analyzed, and is part of a thermal control system for the integrated circuit.
摘要翻译： 盒式化学传感器由壳体形成，壳体具有固定到基座的基部和盖，并且设置有用于待分析气体的输入开口，输出孔和通道。 通道在输入开口和输出孔之间的盖中延伸，并且面向承载具有朝向通道开口的敏感区域的集成电路的印刷电路板和能够与要分析的气体中的目标化学物质结合的材料。 在集成装置的下游的壳体内设置风扇，用于在分析后吸入气体，并且是集成电路的热控制系统的一部分。
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8.发明授权Electrostatic micromotor with stator and rotor in contact, in particular for probe-storage systems 有权静电微电机与定子和转子接触，特别是探针存储系统公开(公告)号：US08466599B2
公开(公告)日：2013-06-18
申请号：US12533850
申请日：2009-07-31
IPC分类号： H02N1/00
CPC分类号： H02N1/004
摘要： In an electrostatic micromotor, a mobile substrate faces a fixed substrate and is suspended over the fixed substrate at a given distance of separation in an operative resting condition; an actuation unit is configured so as to give rise to a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement during an operative condition of actuation. The actuation unit is also configured so as to bring the mobile substrate and the fixed substrate substantially into contact and to keep them in contact during the operative condition of actuation. The electrostatic micromotor is provided with an electronic unit for reducing friction, configured so as to reduce a friction generated by the contact between the rotor substrate and the stator substrate during the relative movement.
摘要翻译： 在静电微电机中，移动基板面向固定的基板并且在操作的静止状态下以给定的分离距离悬挂在固定的基板上; 致动单元被构造成在致动的操作状态期间在移动方向上相对于固定基板产生相对移动。 致动单元还构造成使得移动基板和固定基板在操作的操作状态下基本接触并保持它们接触。 静电微电机设置有用于减少摩擦的电子单元，其被配置为在相对运动期间减小由转子基板和定子基板之间的接触产生的摩擦。
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9.发明申请ELECTROSTATIC MICROMOTOR WITH STATOR AND ROTOR IN CONTACT, IN PARTICULAR FOR PROBE-STORAGE SYSTEMS 有权具有定子和转子接触的静电微型电动机，特别是探针存储系统公开(公告)号：US20100026138A1
公开(公告)日：2010-02-04
申请号：US12533850
申请日：2009-07-31
IPC分类号： H02N11/00
CPC分类号： H02N1/004
摘要： In an electrostatic micromotor, a mobile substrate faces a fixed substrate and is suspended over the fixed substrate at a given distance of separation in an operative resting condition; an actuation unit is configured so as to give rise to a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement during an operative condition of actuation. The actuation unit is also configured so as to bring the mobile substrate and the fixed substrate substantially into contact and to keep them in contact during the operative condition of actuation. The electrostatic micromotor is provided with an electronic unit for reducing friction, configured so as to reduce a friction generated by the contact between the rotor substrate and the stator substrate during the relative movement.
摘要翻译： 在静电微电机中，移动基板面向固定的基板并且在操作的静止状态下以给定的分离距离悬挂在固定的基板上; 致动单元被构造成在致动的操作状态期间在移动方向上相对于固定基板产生相对移动。 致动单元还构造成使得移动基板和固定基板在操作的操作状态下基本接触并保持它们接触。 静电微电机设置有用于减少摩擦的电子单元，其被配置为在相对运动期间减小由转子基板和定子基板之间的接触产生的摩擦。
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10.发明申请SILICON ELECTROSTATIC MICROMOTOR WITH INDENTATIONS, IN PARTICULAR FOR PROBE-STORAGE SYSTEMS 有权具有指示性，特别是探针存储系统的硅电极微型电机公开(公告)号：US20100026137A1
公开(公告)日：2010-02-04
申请号：US12533835
申请日：2009-07-31
IPC分类号： H02N11/00
CPC分类号： H02N1/004
摘要： In an electrostatic micromotor, a mobile substrate faces a fixed substrate, and electrostatic-interaction elements are provided to allow a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement. The electrostatic-interaction elements include electrodes arranged on a facing surface of the fixed substrate (2) facing the mobile substrate. The mobile substrate has indentations, which extend within the mobile substrate starting from a respective facing surface that faces the fixed substrate and define between them projections staggered with respect to the electrodes in the direction of movement. Side walls of the indentations have a first distance of separation at the respective facing surface, and a second distance of separation, greater than the first distance of separation, at an internal region of the indentations.
摘要翻译： 在静电微电机中，移动衬底面向固定衬底，并且提供静电相互作用元件以允许移动衬底相对于固定衬底在移动方向上的相对移动。 静电相互作用元件包括布置在面向移动基板的固定基板（2）的面对表面上的电极。 移动基板具有凹槽，其从移动基板的相对面朝向固定基板开始并且在它们之间限定在移动方向上相对于电极交错的凸起之间延伸的移动基板。 凹陷的侧壁在相应的相对表面处具有第一分离距离，并且在凹陷的内部区域处具有大于分离距离的第二距离。
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