Micro-lens array and method of making micro-lens array
    1.
    发明授权
    Micro-lens array and method of making micro-lens array 有权
    微透镜阵列及制作微透镜阵列的方法

    公开(公告)号:US07042645B2

    公开(公告)日:2006-05-09

    申请号:US10740600

    申请日:2003-12-22

    IPC分类号: G02B27/00

    CPC分类号: G02B3/0031 G02B3/0056

    摘要: A micro-lens array and a method for making are described. The micro-lens array includes a base element and a plurality of lenses formed of an epoxy and including nanoparticles. The micro-lens array is formed from a master micro-lens array, which is placed within a replica micro-lens making assembly. The master micro-lens array is coated with an anti-stiction material prior to having an elastomeric material positioned over it and cured. Removal of the elastomeric material provides a plurality of cavities, which are filled with an epoxy including nanoparticles. Curing of the epoxy finishes the fabrication of the micro-lens array. The lenses of the micro-lens array are formed from a colloidal suspension of nanoparticles and resin.

    摘要翻译: 描述微透镜阵列和制造方法。 微透镜阵列包括基底元件和由环氧树脂形成并包括纳米颗粒的多个透镜。 微透镜阵列由放置在复制微透镜制造组件内的主微透镜阵列形成。 主微透镜阵列在将抗弹性材料定位在其上并固化之前用抗静电材料涂覆。 去除弹性体材料提供多个空腔,其填充有包括纳米颗粒的环氧树脂。 环氧树脂的固化完成了微透镜阵列的制造。 微透镜阵列的透镜由纳米颗粒和树脂的胶态悬浮液形成。

    Micro-lens array and method of making micro-lens array
    2.
    发明授权
    Micro-lens array and method of making micro-lens array 失效
    微透镜阵列及制作微透镜阵列的方法

    公开(公告)号:US06700708B2

    公开(公告)日:2004-03-02

    申请号:US10157015

    申请日:2002-05-30

    IPC分类号: G02B2710

    CPC分类号: G02B3/0031 G02B3/0056

    摘要: A micro-lens array and a method for making are described. The micro-lens array includes a base element and a plurality of lenses formed of an epoxy and including nanoparticles. The micro-lens array is formed from a master micro-lens array, which is placed within a replica micro-lens making assembly. The master micro-lens array is coated with an anti-stiction material prior to having an elastomeric material positioned over it and cured. Removal of the elastomeric material provides a plurality of cavities, which are filled with an epoxy including nanoparticles. Curing of the epoxy finishes the fabrication of the micro-lens array. The lenses of the micro-lens array are formed from a colloidal suspension of nanoparticles and resin.

    摘要翻译: 描述微透镜阵列和制造方法。 微透镜阵列包括基底元件和由环氧树脂形成并包括纳米颗粒的多个透镜。 微透镜阵列由放置在复制微透镜制造组件内的主微透镜阵列形成。 主微透镜阵列在将抗弹性材料定位在其上并固化之前用抗静电材料涂覆。 去除弹性体材料提供多个空腔,其填充有包括纳米颗粒的环氧树脂。 环氧树脂的固化完成了微透镜阵列的制造。 微透镜阵列的透镜由纳米颗粒和树脂的胶态悬浮液形成。

    Micro-electro-mechanical system device and method of making same
    3.
    发明授权
    Micro-electro-mechanical system device and method of making same 有权
    微机电系统装置及其制造方法

    公开(公告)号:US06906846B2

    公开(公告)日:2005-06-14

    申请号:US10217609

    申请日:2002-08-14

    CPC分类号: G02B26/0841

    摘要: A MEMS device and a method for making a MEMS device are described. The MEMS device includes a support member, an optical device, and a flexible member. In one aspect, the flexible member is formed separately from the support member and the optical device. In one aspect, the flexible member is dimensioned to enable flex in one direction while maintaining stiffness in two orthogonal directions. In one fabrication embodiment, the MEMS device is formed by etching an opening into the structural layer to create a structural support member and an optical device. The structural support member and optical device are mounted on a support substrate with a sacrificial layer. A flexible member is conformally deposited over the structural support member and the optical device and then etched. The sacrificial layer is partially etched away to leave the structural support member anchored to the support substrate.

    摘要翻译: 描述了MEMS器件和制造MEMS器件的方法。 MEMS装置包括支撑构件,光学装置和柔性构件。 一方面,柔性构件与支撑构件和光学装置分开形成。 在一个方面,柔性构件的尺寸设计成使得能够在一个方向上弯曲,同时保持两个正交方向上的刚度。 在一个制造实施例中,通过将开口蚀刻到结构层中以形成结构支撑构件和光学装置来形成MEMS器件。 结构支撑构件和光学装置安装在具有牺牲层的支撑衬底上。 柔性构件保形地沉积在结构支撑构件和光学装置上,然后蚀刻。 牺牲层被部分地蚀刻掉以使结构支撑构件锚定到支撑衬底上。

    Sub-micron device fabrication using multiple aperture filter
    4.
    发明授权
    Sub-micron device fabrication using multiple aperture filter 失效
    使用多孔径滤光片的亚微米器件制造

    公开(公告)号:US5316879A

    公开(公告)日:1994-05-31

    申请号:US913508

    申请日:1992-07-14

    摘要: Fabrication of sub-micron design rule integrated circuits entails imposition of patterning information, consisting of degree of scattering, on a projected scanning beam of accelerated electrons by means of a mask, imaging being dependent upon passage through a back focal plane filter including a plurality of apertures for selectively passing relatively unscattered electrons.

    摘要翻译: 亚微米设计规则集成电路的制造需要通过掩模来施加由加速电子的投射扫描光束组成的散射程度的图形信息,成像依赖于通过包括多个 用于选择性地通过相对不散射电子的孔。

    Process for device fabrication using projection lithography and an
apparatus therefor
    5.
    发明授权
    Process for device fabrication using projection lithography and an apparatus therefor 失效
    使用投影光刻的器件制造方法及其装置

    公开(公告)号:US5561008A

    公开(公告)日:1996-10-01

    申请号:US379052

    申请日:1995-01-27

    摘要: The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.

    摘要翻译: 本发明涉及投影光刻的方法和装置,其中在单次曝光中有效地消除了由邻近效应引起的引入到辐射敏感材料中的对比度。 图案化的辐射通过具有至少一个透镜和后焦平面滤光片的透镜系统透射。 后焦平面滤光器具有至少两个孔,图像孔和接近效应校正孔。 图案化的辐射通过图像孔径传播并将期望的图像引入到能量敏感的抗蚀剂材料中。 反向图案辐射的一部分通过邻近效应校正孔传递到能量敏感抗蚀剂材料上,以有效地消除由邻近效应引起的对比度。

    Masks with low stress multilayer films and a process for controlling the
stress of multilayer films
    6.
    发明授权
    Masks with low stress multilayer films and a process for controlling the stress of multilayer films 失效
    具有低应力多层膜的掩模和用于控制多层膜的应力的方法

    公开(公告)号:US5500312A

    公开(公告)日:1996-03-19

    申请号:US321362

    申请日:1994-10-11

    CPC分类号: G03F1/22 G03F1/20

    摘要: A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.

    摘要翻译: 公开了一种用于控制形成在基板上的多层膜的应力的方法。 在基板中形成多个周期,每个周期具有至少两层材料,其中材料层之一处于压应力下,另一层材料处于拉伸应力下。 通过选择压缩应力下的层的厚度和拉伸应力下的层的厚度来控制多层膜中的应力,这将提供所需应力的多层膜。 每层的厚度为约0.5nm至约10nm。 使用本方法获得约-50MPa至约50MPa的应力的多层膜。 本发明还涉及具有这种多层膜的掩模。

    Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems
    7.
    发明授权
    Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems 有权
    用于抑制带电粒子投影光刻系统中的空间电荷诱导像差的装置和方法

    公开(公告)号:US06528799B1

    公开(公告)日:2003-03-04

    申请号:US09692150

    申请日:2000-10-20

    IPC分类号: H01J37063

    摘要: An electron beam lithographic apparatus has an electron gun providing a beam of accelerated electrons, a mask stage adapted to hold a mask in a path of the beam of accelerated electrons, and a workpiece stage adapted to hold a workpiece in a path of electrons that have passed through the mask. The electron gun has a cathode having an electron emission surface, an anode adapted to be connected to a high-voltage power supply to provide an electric field between the cathode and the anode to accelerate electrons emitted from the cathode toward the anode, and a current-density-profile control grid disposed between the anode and the cathode. The current-density-profile control grid is configured to provide an electron gun that produces an electron beam having a non-uniform current density profile. A method of producing a micro-device includes generating a beam of charged particles having a non-uniform charged-particle current density, illuminating a mask with the beam of charged particles, and exposing a workpiece with charged particles from the beam of charged particles.

    摘要翻译: 电子束光刻设备具有提供加速电子束的电子枪,适于将加速电子束的路径中的掩模保持的掩模台,以及适于将工件保持在具有 穿过面具。 电子枪具有具有电子发射表面的阴极,适于连接到高压电源的阳极,以在阴极和阳极之间提供电场,以加速从阴极向阳极发射的电子,以及电流 设置在阳极和阴极之间的密度分布控制网格。 电流密度分布控制网格被配置为提供产生具有不均匀电流密度分布的电子束的电子枪。 微型器件的制造方法包括:生成具有不均匀带电粒子电流密度的带电粒子束,用带电粒子束照射掩模,以及从带电粒子束带电的带电粒子露出工件。

    Projection electron lithographic procedure
    8.
    发明授权
    Projection electron lithographic procedure 失效
    投影电子光刻法

    公开(公告)号:US5279925A

    公开(公告)日:1994-01-18

    申请号:US991832

    申请日:1992-12-16

    IPC分类号: H01L21/027 G03F7/20 G03F9/00

    摘要: It has been found that for a SCALPEL lithographic system thermal effects dictate that the acceleration voltage for the exposing electrons be maintained within a specific range. This range depends on a variety of factors but is generally in the 50 to 150 KeV region. Additionally, thermal considerations also dictate the method of scanning the mask to print an entire wafer.

    摘要翻译: 已经发现,对于SCALPEL光刻系统,热效应规定暴露电子的加速电压保持在特定范围内。 该范围取决于多种因素,但通常在50至150 KeV区域。 此外,热考虑也决定了扫描掩模以打印整个晶片的方法。

    Device manufacture involving step-and-scan delineation
    9.
    发明授权
    Device manufacture involving step-and-scan delineation 失效
    涉及逐步扫描描绘的设备制造

    公开(公告)号:US5260151A

    公开(公告)日:1993-11-09

    申请号:US814953

    申请日:1991-12-30

    CPC分类号: G03F1/20 G03F7/2037

    摘要: Fabrication of submicron design rule large scale integrated circuits depends upon use of a strut-segmented mask with struts providing mechanical support to permit thinned mask segments consequently yielding improved resolution. "Stitching"--positioning of projected segment images to yield a satisfactory continuous image--is aided by lithographically defined skirts forming a continuous border within strut-supported segments.

    摘要翻译: 亚微米设计规则大规模集成电路的制造取决于使用支柱分割的掩模,支柱提供机械支撑,以允许变薄的掩模段从而产生改进的分辨率。 “缝合” - 投影段图像的定位以产生令人满意的连续图像 - 通过在支柱支撑段内形成连续边界的光刻定义的裙部来辅助。