公开(公告)号：US20170330834A1

公开(公告)日：2017-11-16

申请号：US15154367

申请日：2016-05-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Veeraraghavan S. Basker ,  Keith H. Tabakman ,  Patrick D. Carpenter ,  Guillaume Bouche ,  Michael V. Aquilino

IPC: H01L23/535 ,  H01L29/417 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L23/535 ,  H01L21/76816 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a contact line being disposed within a dielectric layer and providing electrical connection to source/drain epitaxial regions surrounding a set of fins, the contact line including: a first portion of the contact line electrically isolated from a second portion of the contact line by a contact line spacer, wherein the first portion and the second portion each include a liner layer and a metal, the liner layer separating the metal from the dielectric layer and the source/drain epitaxial regions, and wherein the metal is directly in contact with the contact line spacer.

公开(公告)号：US20170373007A1

公开(公告)日：2017-12-28

申请号：US15698793

申请日：2017-09-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Veeraraghavan S. Basker ,  Keith H. Tabakman ,  Patrick D. Carpenter ,  Guillaume Bouche ,  Michael V. Aquilino

IPC: H01L23/535 ,  H01L29/417 ,  H01L21/768 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L23/535 ,  H01L21/76816 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a contact line being disposed within a dielectric layer and providing electrical connection to source/drain epitaxial regions surrounding a set of fins, the contact line including: a first portion of the contact line electrically isolated from a second portion of the contact line by a contact line spacer, wherein the first portion and the second portion each include a liner layer and a metal, the liner layer separating the metal from the dielectric layer and the source/drain epitaxial regions, and wherein the metal is directly in contact with the contact line spacer.

公开(公告)号：US10453751B2

公开(公告)日：2019-10-22

申请号：US15432016

申请日：2017-02-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiaofeng Qiu ,  Michael V. Aquilino ,  Patrick D. Carpenter ,  Jessica Dechene ,  Ming Hao Tang ,  Haigou Huang ,  Huy Cao

IPC: H01L29/78 ,  H01L21/8234 ,  H01L23/535 ,  H01L21/768 ,  H01L29/423 ,  H01L27/088 ,  H01L21/033 ,  H01L21/311 ,  H01L29/417

Abstract: A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.

公开(公告)号：US10049985B2

公开(公告)日：2018-08-14

申请号：US15698793

申请日：2017-09-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Veeraraghavan S. Basker ,  Keith H. Tabakman ,  Patrick D. Carpenter ,  Guillaume Bouche ,  Michael V. Aquilino

IPC: H01L29/40 ,  H01L23/535 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/768

Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a contact line being disposed within a dielectric layer and providing electrical connection to source/drain epitaxial regions surrounding a set of fins, the contact line including: a first portion of the contact line electrically isolated from a second portion of the contact line by a contact line spacer, wherein the first portion and the second portion each include a liner layer and a metal, the liner layer separating the metal from the dielectric layer and the source/drain epitaxial regions, and wherein the metal is directly in contact with the contact line spacer.

公开(公告)号：US09812400B1

公开(公告)日：2017-11-07

申请号：US15154367

申请日：2016-05-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Veeraraghavan S. Basker ,  Keith H. Tabakman ,  Patrick D. Carpenter ,  Guillaume Bouche ,  Michael V. Aquilino

IPC: H01L29/40 ,  H01L29/66 ,  H01L21/336 ,  H01L23/535 ,  H01L29/78 ,  H01L29/417 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76816 ,  H01L21/76841 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/785

Abstract: One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a contact line being disposed within a dielectric layer and providing electrical connection to source/drain epitaxial regions surrounding a set of fins, the contact line including: a first portion of the contact line electrically isolated from a second portion of the contact line by a contact line spacer, wherein the first portion and the second portion each include a liner layer and a metal, the liner layer separating the metal from the dielectric layer and the source/drain epitaxial regions, and wherein the metal is directly in contact with the contact line spacer.