Method and apparatus for detecting foreign material on a chuck
    2.
    发明授权
    Method and apparatus for detecting foreign material on a chuck 有权
    用于检测卡盘上异物的方法和装置

    公开(公告)号:US09508578B2

    公开(公告)日:2016-11-29

    申请号:US14171874

    申请日:2014-02-04

    CPC classification number: H01L21/67288 G01F1/76 H01L21/00 H01L21/67109

    Abstract: An apparatus and method for leak detection of coolant gas from a chuck. The apparatus includes a chuck having a top surface and configured to clamp a substrate to the top surface, the chuck having one or more recessed regions in the top surface, the recessed regions configured to allow a cooling gas to contact a backside of the substrate; a cooling gas inlet and a cooling gas outlet connected to the one or more recessed regions; a first measurement device connected to the cooling gas inlet and configured to measure a first amount of cooling gas entering the cooling gas inlet and a second measurement device connected to the cooling gas outlet and configured to measure a second amount of cooling gas exiting from the cooling gas outlet; and a controller configured to determine a difference between the first amount of cooling gas and the second amount of cooling gas.

    Abstract translation: 一种用于从卡盘泄漏检测冷却剂气体的装置和方法。 该装置包括具有顶表面并被配置为将基板夹持到顶表面的卡盘,卡盘在顶表面中具有一个或多个凹陷区域,凹陷区域被配置为允许冷却气体接触基板的背面; 连接到所述一个或多个凹陷区域的冷却气体入口和冷却气体出口; 连接到冷却气体入口并被配置成测量进入冷却气体入口的第一量的冷却气体的第一测量装置和连接到冷却气体出口的第二测量装置,其被配置成测量从冷却出口排出的第二量的冷却气体 气体出口; 以及控制器,被配置为确定所述第一冷却气体量与所述第二冷却气体量之间的差。

    Void monitoring device for measurement of wafer temperature variations
    4.
    发明授权
    Void monitoring device for measurement of wafer temperature variations 有权
    用于测量晶片温度变化的空隙监测装置

    公开(公告)号:US09543219B2

    公开(公告)日:2017-01-10

    申请号:US14557819

    申请日:2014-12-02

    Abstract: A method of monitoring a temperature of a plurality of regions in a substrate during a deposition process, the monitoring of the temperature including: forming, in the monitored plurality of regions, a plurality of metal structures each with a different metal pattern density, where each metal pattern density corresponds to a threshold temperature at or above which metal voids and surface roughness are formed in the plurality of metal structures, and detecting metal voids and surface roughness in the plurality of metal structures to determine the temperature of the monitored plurality of regions.

    Abstract translation: 一种在沉积过程中监测衬底中的多个区域的温度的方法,所述温度的监测包括:在所监视的多个区域中形成多个金属结构,每个金属结构具有不同的金属图案密度,其中每个 金属图案密度对应于多个金属结构中形成金属空隙和表面粗糙度的阈值温度,并且检测多个金属结构中的金属空隙和表面粗糙度,以确定被监测的多个区域的温度。

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