公开(公告)号：US09484301B2

公开(公告)日：2016-11-01

申请号：US14718466

申请日：2015-05-21

Applicant: GLOBALFOUNDRIES INC.

Inventor： Max G. Levy ,  Gary L. Milo ,  Matthew D. Moon ,  Anthony C. Speranza ,  Timothy D. Sullivan ,  David C. Thomas ,  Steven S. Williams

IPC: H01L23/528 ,  H01L21/768 ,  H01L49/02 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/76883 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/53214 ,  H01L23/53223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Aspects of the present invention relate to a controlled metal extrusion opening in a semiconductor structure. Various embodiments include a semiconductor structure. The structure includes an aluminum layer. The aluminum layer includes an aluminum island within the aluminum layer, and a lateral extrusion receiving opening extending through the aluminum layer adjacent the aluminum island. The opening includes a lateral extrusion of the aluminum layer of the semiconductor structure. Additional embodiments include a method of forming a semiconductor structure. The method can include forming an aluminum layer over a titanium layer. The aluminum layer includes an aluminum island within the aluminum layer. The method can also include forming an opening extending through the aluminum layer adjacent the aluminum island within the aluminum layer. The opening includes a lateral extrusion of the aluminum layer of the semiconductor layer.

公开(公告)号：US09595579B2

公开(公告)日：2017-03-14

申请号：US14712397

申请日：2015-05-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Natalie B. Feilchenfeld ,  Max G. Levy ,  Richard A. Phelps ,  Santosh Sharma ,  Yun Shi ,  Michael J. Zierak

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/10 ,  H01L29/66 ,  H01L29/423 ,  H01L29/08

CPC classification number: H01L29/0653 ,  H01L21/76232 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7846

Abstract: Various embodiments include structures for field effect transistors (FETs). In various embodiments, a structure for a FET includes: a deep n-type well; a shallow n-type well within the deep n-type well; and a shallow trench isolation (STI) region within the shallow n-type well, the STI region including: a first section having a first depth within the shallow n-type well as measured from an upper surface of the shallow n-type well, and a second section contacting and overlying the first section, the second section having a second depth within the shallow n-type well as measured from the upper surface of the shallow n-type well.

Abstract translation: 各种实施例包括用于场效应晶体管（FET）的结构。 在各种实施例中，用于FET的结构包括：深n型阱; 深n型井内浅层n型井; 以及在浅n型阱内的浅沟槽隔离（STI）区域，所述STI区域包括：从浅n型阱的上表面测量的，在浅n型阱内具有第一深度的第一部分， 以及与所述第一部分接触并覆盖的第二部分，所述第二部分具有从所述浅n型阱的上表面测量的所述浅n型阱内的第二深度。

公开(公告)号：US09893157B1

公开(公告)日：2018-02-13

申请号：US15401281

申请日：2017-01-09

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Natalie B. Feilchenfeld ,  Michael J. Zierak ,  Max G. Levy ,  BethAnn Lawrence

IPC: H01L29/00 ,  H01L29/40 ,  H01L21/762 ,  H01L23/522 ,  H01L21/768 ,  H01L29/10 ,  H01L23/532 ,  H01L27/12 ,  H01L29/78

CPC classification number: H01L29/407 ,  H01L21/76283 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/53271 ,  H01L27/1207 ,  H01L29/107 ,  H01L29/1087 ,  H01L29/7824

Abstract: Structures that include contact trenches and isolation trenches, as well as methods for forming structures including contact trenches and isolation trenches. A contact trench is formed that extends through a device layer of a silicon-on-insulator (SOI) substrate to a buried oxide layer of the SOI substrate. An isolation trench is formed that extends through the device layer to the buried oxide layer. An electrical insulator is deposited that fills the contact trench and the first isolation trench. The electrical insulator is removed from the contact trench. After the electrical insulator is removed from the contact trench, an electrical conductor is formed in the contact trench. The electrical contact may be coupled with a doped region in a handle wafer of the SOI substrate.

公开(公告)号：US09508578B2

公开(公告)日：2016-11-29

申请号：US14171874

申请日：2014-02-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shawn A. Adderly ,  Samantha D. DiStefano ,  Jeffrey P. Gambino ,  Max G. Levy ,  Max L. Lifson ,  Jed H. Rankin ,  Timothy D. Sullivan

IPC: H01L21/67 ,  H01L21/00 ,  G01F1/76

CPC classification number: H01L21/67288 ,  G01F1/76 ,  H01L21/00 ,  H01L21/67109

Abstract: An apparatus and method for leak detection of coolant gas from a chuck. The apparatus includes a chuck having a top surface and configured to clamp a substrate to the top surface, the chuck having one or more recessed regions in the top surface, the recessed regions configured to allow a cooling gas to contact a backside of the substrate; a cooling gas inlet and a cooling gas outlet connected to the one or more recessed regions; a first measurement device connected to the cooling gas inlet and configured to measure a first amount of cooling gas entering the cooling gas inlet and a second measurement device connected to the cooling gas outlet and configured to measure a second amount of cooling gas exiting from the cooling gas outlet; and a controller configured to determine a difference between the first amount of cooling gas and the second amount of cooling gas.

Abstract translation: 一种用于从卡盘泄漏检测冷却剂气体的装置和方法。 该装置包括具有顶表面并被配置为将基板夹持到顶表面的卡盘，卡盘在顶表面中具有一个或多个凹陷区域，凹陷区域被配置为允许冷却气体接触基板的背面; 连接到所述一个或多个凹陷区域的冷却气体入口和冷却气体出口; 连接到冷却气体入口并被配置成测量进入冷却气体入口的第一量的冷却气体的第一测量装置和连接到冷却气体出口的第二测量装置，其被配置成测量从冷却出口排出的第二量的冷却气体 气体出口; 以及控制器，被配置为确定所述第一冷却气体量与所述第二冷却气体量之间的差。