公开(公告)号：US20150332934A1

公开(公告)日：2015-11-19

申请号：US14281359

申请日：2014-05-19

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hong YU ,  Xiang HU ,  Zhao LUN ,  Huang LIU

IPC: H01L21/311 ,  H01L29/66 ,  H01L29/78 ,  H01L29/12 ,  H01L29/06 ,  H01L21/3105 ,  H01L21/02

CPC classification number: H01L29/78 ,  H01L21/02532 ,  H01L21/3081 ,  H01L21/3105 ,  H01L21/31051 ,  H01L21/311 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L29/0684 ,  H01L29/12 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A lithographic stack over a raised structure (e.g., fin) of a non-planar semiconductor structure, such as a FinFET, includes a bottom layer of spin-on amorphous carbon or spin-on organic planarizing material, a hard mask layer of a nitride and/or an oxide on the spin-on layer, a layer of a developable bottom anti-reflective coating (dBARC) on the hard mask layer, and a top layer of photoresist. The stack is etched to expose and recess the raised structure, and epitaxial structure(s) are grown on the recess.

Abstract translation: 诸如FinFET的非平面半导体结构的凸起结构（例如，翅片）上的光刻叠层包括旋涂非晶碳或旋涂有机平面化材料的底层，氮化物的硬掩模层 和/或旋涂层上的氧化物，硬掩模层上的可显影底部抗反射涂层（dBARC）的层和光致抗蚀剂的顶层。 蚀刻该叠层以露出和凹进凸起的结构，并且外延结构在凹槽上生长。

公开(公告)号：US20150380316A1

公开(公告)日：2015-12-31

申请号：US14319640

申请日：2014-06-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hong YU ,  HongLiang SHEN ,  Zhao LUN ,  Zhenyu HU ,  Richard J. Carter

IPC: H01L21/8234 ,  H01L21/306 ,  H01L21/762 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L21/823481 ,  H01L21/30604 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653

Abstract: The use of two different materials for shallow trench isolation and deep structural trenches with a dielectric material therein (e.g., flowable oxide and a HARP oxide, respectively) causes non-uniform heights of exposed portions of raised semiconductor structures for non-planar semiconductor devices, due to the different etch rates of the materials. Non-uniform openings adjacent the exposed portions of the raised structures from recessing the isolation and dielectric materials are filled with additional dielectric material to create a uniform top layer of one material (the dielectric material), which can then be uniformly recessed to expose uniform portions of the raised structures.

Abstract translation: 对于浅沟槽隔离和其中具有介电材料的深结构沟槽（例如，可流动的氧化物和HARP氧化物）分别使用两种不同的材料导致用于非平面半导体器件的凸起半导体结构的暴露部分的不均匀高度， 由于材料的蚀刻速率不同。 与凸起结构的暴露部分相邻的不均匀的开口不会使隔离和介电材料凹陷，填充有额外的电介质材料，以形成均匀的一层材料（电介质材料）的顶层，然后可将其均匀地凹入以露出均匀的部分 的凸起结构。