公开(公告)号：US09379209B2

公开(公告)日：2016-06-28

申请号：US14536167

申请日：2014-11-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiuyu Cai ,  Jiajun Mao ,  Xusheng Wu ,  Min-hwa Chi

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/285 ,  H01L21/321 ,  H01L21/3205

CPC classification number: H01L29/66545 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/32115 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867 ,  H01L29/4958 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

Abstract: A replacement gate structure that includes a conductive metal gate electrode is formed in a gate cavity, wherein the gate cavity is formed in a dielectric material formed above an active region of a semiconductor device. An upper surface of the conductive metal gate electrode and an upper surface of the dielectric material are planarized during a common planarization process, and a protective conductive cap is selectively formed on and in direct physical contact with the planarized upper surface of the conductive metal gate electrode. A contact structure is formed in a dielectric insulating layer formed above the replacement gate structure, the contact structure directly contacting the protective conductive cap.

Abstract translation: 包括导电金属栅电极的替代栅极结构形成在栅腔中，其中栅腔形成在形成在半导体器件的有源区上方的电介质材料中。 导电金属栅电极的上表面和电介质材料的上表面在公共平坦化工艺期间被平坦化，并且保护性导电帽选择性地形成在导电金属栅电极的平坦化上表面上并与之直接物理接触 。 接触结构形成在形成在替换栅极结构之上的电介质绝缘层中，接触结构直接接触保护性导电盖。

公开(公告)号：US20160133721A1

公开(公告)日：2016-05-12

申请号：US14536167

申请日：2014-11-07

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiuyu Cai ,  Jiajun Mao ,  Xusheng Wu ,  Min-hwa Chi

IPC: H01L29/66 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/28 ,  H01L21/285

CPC classification number: H01L29/66545 ,  H01L21/28079 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/32053 ,  H01L21/32115 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867 ,  H01L29/4958 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

Abstract: A replacement gate structure that includes a conductive metal gate electrode is formed in a gate cavity, wherein the gate cavity is formed in a dielectric material formed above an active region of a semiconductor device. An upper surface of the conductive metal gate electrode and an upper surface of the dielectric material are planarized during a common planarization process, and a protective conductive cap is selectively formed on and in direct physical contact with the planarized upper surface of the conductive metal gate electrode. A contact structure is formed in a dielectric insulating layer formed above the replacement gate structure, the contact structure directly contacting the protective conductive cap.

Abstract translation: 包括导电金属栅电极的替代栅极结构形成在栅腔中，其中栅腔形成在形成在半导体器件的有源区上方的电介质材料中。 导电金属栅电极的上表面和电介质材料的上表面在公共平坦化工艺期间被平坦化，并且保护性导电帽选择性地形成在导电金属栅电极的平坦化上表面上并与之直接物理接触 。 接触结构形成在形成在替换栅极结构之上的电介质绝缘层中，接触结构直接接触保护性导电盖。