公开(公告)号：US10056368B2

公开(公告)日：2018-08-21

申请号：US15686523

申请日：2017-08-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kasun Anupama Punchihewa ,  Jagar Singh

IPC: H01L27/06 ,  H01L21/265 ,  H01L29/06 ,  H01L29/861 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/08

CPC classification number: H01L27/0629 ,  H01L21/26513 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0814 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66136 ,  H01L29/861

Abstract: A diode includes a plurality of fins defined in a semiconductor substrate. An anode region is defined by a doped region in a first surface portion of each of the plurality of fins and in a second surface portion of the semiconductor substrate disposed between adjacent fins in the plurality of fins. The doped region includes a first dopant having a first conductivity type and is contiguous between the adjacent fins. A cathode region is defined by an inner portion of each of the plurality of fins positioned below and contacting the first surface portion and a third portion of the semiconductor substrate positioned below and contacting the second surface portion. The cathode region is contiguous and the dopants in the cathode region and anode region have opposite conductivity types. A junction is defined between the anode region and the cathode region. A first contact interfaces with the anode region.

公开(公告)号：US20180240885A1

公开(公告)日：2018-08-23

申请号：US15437846

申请日：2017-02-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Tuhin Guha Neogi ,  Scott D. Luning ,  David Pritchard ,  Kasun Anupama Punchihewa

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/8238

CPC classification number: H01L29/665 ,  H01L21/823425 ,  H01L21/823443 ,  H01L21/823475 ,  H01L21/823835 ,  H01L21/823864 ,  H01L21/823885 ,  H01L27/088 ,  H01L29/42356 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827

Abstract: Structures for a field-effect transistor and fabrication methods for forming a structure for a field-effect transistor. The structure may include a gate electrode, a source/drain region formed adjacent to a vertical sidewall of the gate electrode, and a conductive link that couples the vertical sidewall of the gate electrode with the source/drain region.

公开(公告)号：US20180006019A1

公开(公告)日：2018-01-04

申请号：US15686523

申请日：2017-08-25

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kasun Anupama Punchihewa ,  Jagar Singh

IPC: H01L27/06 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/265 ,  H01L27/08 ,  H01L29/861 ,  H01L29/06

CPC classification number: H01L27/0629 ,  H01L21/26513 ,  H01L21/823431 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66136 ,  H01L29/861

Abstract: A diode includes a plurality of fins defined in a semiconductor substrate. An anode region is defined by a doped region in a first surface portion of each of the plurality of fins and in a second surface portion of the semiconductor substrate disposed between adjacent fins in the plurality of fins. The doped region includes a first dopant having a first conductivity type and is contiguous between the adjacent fins. A cathode region is defined by an inner portion of each of the plurality of fins positioned below and contacting the first surface portion and a third portion of the semiconductor substrate positioned below and contacting the second surface portion. The cathode region is contiguous and the dopants in the cathode region and anode region have opposite conductivity types. A junction is defined between the anode region and the cathode region. A first contact interfaces with the anode region.

公开(公告)号：US10181522B2

公开(公告)日：2019-01-15

申请号：US15437846

申请日：2017-02-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Tuhin Guha Neogi ,  Scott D. Luning ,  David Pritchard ,  Kasun Anupama Punchihewa

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/8238

Abstract: Structures for a field-effect transistor and fabrication methods for forming a structure for a field-effect transistor. The structure may include a gate electrode, a source/drain region formed adjacent to a vertical sidewall of the gate electrode, and a conductive link that couples the vertical sidewall of the gate electrode with the source/drain region.

公开(公告)号：US20170317071A1

公开(公告)日：2017-11-02

申请号：US15139644

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kasun Anupama Punchihewa ,  Jagar Singh

IPC: H01L27/06 ,  H01L29/66 ,  H01L29/06 ,  H01L21/265 ,  H01L27/08 ,  H01L21/8234 ,  H01L29/861

CPC classification number: H01L27/0629 ,  H01L21/26513 ,  H01L21/823431 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66136 ,  H01L29/861

Abstract: A method incudes forming a first plurality of fins having a first width in a first region of a semiconductor substrate. A second plurality of fins having a second width greater than the first width is formed in a second region of a semiconductor substrate. A doped region is formed in a surface portion of the second plurality of fins to define an anode region of a diode. A junction is defined between the doped region and a cathode region of the second plurality of fins. A first contact interfacing with the anode region is formed.

公开(公告)号：US09793262B1

公开(公告)日：2017-10-17

申请号：US15139644

申请日：2016-04-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Kasun Anupama Punchihewa ,  Jagar Singh

IPC: H01L21/265 ,  H01L27/06 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/861 ,  H01L27/08 ,  H01L29/06

CPC classification number: H01L27/0629 ,  H01L21/26513 ,  H01L21/823431 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66136 ,  H01L29/861

Abstract: A method includes forming a first plurality of fins having a first width in a first region of a semiconductor substrate. A second plurality of fins having a second width greater than the first width is formed in a second region of a semiconductor substrate. A doped region is formed in a surface portion of the second plurality of fins to define an anode region of a diode. A junction is defined between the doped region and a cathode region of the second plurality of fins. A first contact interfacing with the anode region is formed.