公开(公告)号：US20240194816A1

公开(公告)日：2024-06-13

申请号：US18529176

申请日：2023-12-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Wei DONG ,  Hiroyasu FUJIWARA

IPC: H01L31/108 ,  H01L31/18

CPC classification number: H01L31/1085 ,  H01L31/1804

Abstract: A method of manufacturing an optical detection element includes: a first process of forming an amorphous semiconductor layer on a support; a second process of forming a first metal layer on the semiconductor layer; a third process of carrying out a heat treatment so that the semiconductor layer is polycrystallized and the semiconductor layer and the first metal layer are interchanged with each other, thereby forming the first metal layer on the support and forming a polycrystalline photoelectric conversion layer on the first metal layer; and a fourth process of forming a second metal layer on the photoelectric conversion layer. In the fourth process, the second metal layer is formed so that a width of the second metal layer becomes a width with which surface plasmon resonance occurs due to incidence of light in a predetermined wavelength region.

公开(公告)号：US20240105870A1

公开(公告)日：2024-03-28

申请号：US18371606

申请日：2023-09-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Hiroyasu FUJIWARA ,  Wei DONG

IPC: H01L31/0368 ,  H01L31/0224 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/03682 ,  H01L31/022416 ,  H01L31/109 ,  H01L31/1812

Abstract: A photodetection element includes an N-type silicon layer formed in a single crystal state, a P-type germanium-containing layer formed in a polycrystal state and forming a hetero PN junction between the germanium-containing layer and the silicon layer, a first electrode electrically connected to the silicon layer, and a second electrode electrically connected to the germanium-containing layer.

公开(公告)号：US20240128386A1

公开(公告)日：2024-04-18

申请号：US18243753

申请日：2023-09-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG

IPC: H01L31/0236 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/02363 ,  H01L31/02161 ,  H01L31/022408

Abstract: A photodetector includes a first conduction-type semiconductor layer, a semiconductor light absorption layer provided on the first conduction-type semiconductor layer, and a second conduction-type semiconductor layer provided on the semiconductor light absorption layer. Inside the semiconductor light absorption layer, finely modified portions forming a localized inhomogeneous electric field inside the semiconductor light absorption layer by scattering incident light are provided in a manner of being separated from the second conduction-type semiconductor layer.

公开(公告)号：US20230298897A1

公开(公告)日：2023-09-21

申请号：US18095620

申请日：2023-01-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG ,  Kazuyoshi HIROSE

IPC: H01L21/3065 ,  H01L21/3205 ,  H01L33/20

CPC classification number: H01L21/30655 ,  H01L21/32053 ,  H01L33/20 ,  H01L31/108

Abstract: Provided is a semiconductor device including: a semiconductor layer having an uneven structure configured to include a recessed portion on one surface side thereof; a first electrode film (first deposited film) provided on the one surface of the semiconductor layer; and a second electrode film (second deposited film) provided on a bottom surface of the recessed portion, wherein an enlarged portion having a cross-sectional area enlarged with respect to a portion on an opening portion side of the recessed portion is provided.

公开(公告)号：US20190058073A1

公开(公告)日：2019-02-21

申请号：US16100457

申请日：2018-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyasu FUJIWARA ,  Wei DONG ,  Kazutoshi NAKAJIMA ,  Shohei HAYASHI

IPC: H01L31/108 ,  H01L31/07 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/101

Abstract: A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.

公开(公告)号：US20220205910A1

公开(公告)日：2022-06-30

申请号：US17543936

申请日：2021-12-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG

IPC: G01N21/45 ,  G01J1/44

Abstract: An optical detector includes a semiconductor base portion of a first conductivity type having a first surface and a second surface and provided with a projection projecting from the second surface, a first metal electrode layer provided on the first surface or the second surface of the semiconductor base portion, a semiconductor layer of a second conductivity type having a first portion covering the second surface of the semiconductor base portion and second portions covering side surfaces of the projection, and a second metal electrode layer provided in close contact with the second semiconductor layer such that the projection and the second portions of the second semiconductor layer are interposed therebetween. An MIM resonator is constituted by the projection, the second portions of the second semiconductor layer, and the second metal electrode layer between which the projection and the second portions of the semiconductor layer are interposed.

公开(公告)号：US20230058136A1

公开(公告)日：2023-02-23

申请号：US17883819

申请日：2022-08-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG

IPC: H01L31/0232 ,  H01L31/105

Abstract: A photodetector includes: a first conductive type semiconductor layer; a semiconductor light absorption layer provided on the first conductive type semiconductor layer; a scatterer that is provided with a width equal to or less than a wavelength of incident light so as to be in contact with the semiconductor light absorption layer and forms a localized non-uniform electric field inside the semiconductor light absorption layer by scattering the incident light; a second conductive type semiconductor layer provided on the semiconductor light absorption layer so as to be apart from the scatterer; and an extraction electrode that is provided on the second conductive type semiconductor layer so as to be apart from the scatterer and extracts a photocurrent generated in the semiconductor light absorption layer due to formation of the localized non-uniform electric field.

公开(公告)号：US20190296176A1

公开(公告)日：2019-09-26

申请号：US16353112

申请日：2019-03-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG ,  Hiroyasu FUJIWARA

IPC: H01L31/108

Abstract: A photodetector element according to an aspect of the present disclosure includes a semiconductor layer with an uneven structure on one surface side that is constituted of projection portions and recess portions, and converts light into surface plasmons, and a metal film that is provided on the one surface side of the semiconductor layer in a manner corresponding to the uneven structure and a Schottky junction is formed between the metal film and the semiconductor layer. The semiconductor layer is constituted of n-type conductive silicon, and the other surface side of the semiconductor layer serves as an incident surface for light. The metal film is constituted of a material including nickel which form the Schottky junction when combined with the semiconductor layer.

公开(公告)号：US20190074396A1

公开(公告)日：2019-03-07

申请号：US16114360

申请日：2018-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei DONG ,  Hiroyasu FUJIWARA ,  Kazutoshi NAKAJIMA

IPC: H01L31/108 ,  H01L31/0232 ,  G02B6/122 ,  H01L31/0224

Abstract: A photodetection element includes a semiconductor layer having, on one surface side, a periodic concave/convex structure that includes periodic convex portions and concave portions and converts light into surface plasmon, and a metal film provided on the one surface side of the semiconductor layer in correspondence to the periodic concave/convex structure, and in the periodic concave/convex structure, a Schottky junction portion that has a Schottky junction with the metal film is provided on a base end side of the convex portion, and a non-Schottky junction portion that does not have a Schottky junction with the metal film is provided on a distal end side of the convex portion.