公开(公告)号：US20170213729A1

公开(公告)日：2017-07-27

申请号：US15324709

申请日：2014-07-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di LIANG

IPC: H01L21/02 ,  H01S5/323 ,  H01S5/02 ,  H01L31/0304 ,  H01L21/306

CPC classification number: H01L21/02636 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/30604 ,  H01L21/764 ,  H01L31/0304 ,  H01L31/102 ,  H01L2924/0002 ,  H01S5/021 ,  H01S5/323 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00

Abstract: A multilayer device includes a substrate and a first layer disposed on the substrate. A trench extends through one or both of the substrate and the first layer. The trench has a first sidewall spaced apart from a second sidewall, each sidewall extending from an upper surface of the substrate to a lower surface of the first layer. An optically active region is disposed on the first layer overlying the trench, such that at least a portion of the optically active region is located within a set of lines corresponding to the sidewalls of the trench.

公开(公告)号：US20170133824A1

公开(公告)日：2017-05-11

申请号：US15316157

申请日：2014-07-25

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di LIANG ,  Geza KURCZVEIL

IPC: H01S5/06 ,  H01S5/22

CPC classification number: H01S5/0607 ,  G02B6/12004 ,  G02B6/3536 ,  G02B6/3596 ,  H01S5/0078 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/1032 ,  H01S5/22 ,  H01S5/50

Abstract: One example includes an optical device system. The system includes a waveguide that includes a fixed waveguide portion to propagate an optical signal, a semiconductor membrane layer, and a tunable air gap that separates the fixed waveguide portion and the semiconductor membrane layer. The system also includes an optical tuning system to move the semiconductor membrane layer with respect to the fixed waveguide portion in response to a control signal to control a separation distance of the tunable air gap to tune a characteristic of the optical signal.

公开(公告)号：US20180247812A1

公开(公告)日：2018-08-30

申请号：US15756577

申请日：2015-09-03

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di LIANG

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/764

CPC classification number: H01L21/02639 ,  H01L21/02428 ,  H01L21/02505 ,  H01L21/764 ,  H01L29/0657

Abstract: In example implementations of a heterogeneous substrate, the heterogeneous substrate includes a first material having an air trench, a second material coupled to the first material, a dielectric mask on a first portion of the second material and an active region that is grown on a remaining portion of the second material. An air gap may be formed in the air trench by the second material coupled to the first material. Defects in the second material may be contained to an area below the dielectric mask and the active region may remain defect free.

公开(公告)号：US20200273702A1

公开(公告)日：2020-08-27

申请号：US15930688

申请日：2020-05-13

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di LIANG

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/764

Abstract: In example implementations of a heterogeneous substrate, the heterogeneous substrate includes a first material having an air trench, a second material coupled to the first material, a dielectric mask on a first portion of the second material and an active region that is grown on a remaining portion of the second material. An air gap may be formed in the air trench by the second material coupled to the first material. Defects in the second material may be contained to an area below the dielectric mask and the active region may remain defect free.

公开(公告)号：US20180122785A1

公开(公告)日：2018-05-03

申请号：US15338699

申请日：2016-10-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Marco FIORENTINO ,  Di LIANG ,  Geza KURCZVEIL ,  Raymond G. BEAUSOLEIL

IPC: H01L25/16 ,  H01L23/00 ,  H01L25/00 ,  G02B6/12

CPC classification number: H01L25/167 ,  G02B6/12002 ,  G02B2006/12147 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/80894 ,  H01L2224/80895

Abstract: According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry. The direct bandgap (DBG) semiconductor structure is optically coupled to the photonics circuitry

公开(公告)号：US20170212368A1

公开(公告)日：2017-07-27

申请号：US15328903

申请日：2014-07-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di LIANG ,  Geza KURCZVEIL ,  Marco FIORENTINO ,  Ray G. BEAUSOLEIL

IPC: G02F1/025 ,  G02B6/293

CPC classification number: G02F1/025 ,  G02B6/29338 ,  G02B2006/12085 ,  G02B2006/12142 ,  G02F1/3133 ,  G02F2001/0152 ,  G02F2203/15

Abstract: An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.

公开(公告)号：US20170199078A1

公开(公告)日：2017-07-13

申请号：US15316621

申请日：2014-07-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Zhihong HUANG ,  Di LIANG ,  Charles M SANTORI

IPC: G01J1/44 ,  G01J1/04 ,  H01L31/107

CPC classification number: G01J1/44 ,  G01J1/0407 ,  G01J2001/4466 ,  H01L31/101 ,  H01L31/107

Abstract: Plasmonic avalanche photodetection employs an optical antenna and an avalanche photodiode (APD) coupled to the optical antenna. Hot carriers generated by light incident on the optical antenna are received in an avalanche multiplication region of the APD where avalanche multiplication of the hot carriers is provided.