公开(公告)号：US20240184193A1

公开(公告)日：2024-06-06

申请号：US18556839

申请日：2022-05-06

申请人： HOYA CORPORATION

发明人： Yohei IKEBE ,  Takashi UCHIDA

IPC分类号： G03F1/24 ,  G03F1/48

CPC分类号： G03F1/24 ,  G03F1/48

摘要： [Problem] Provided is a mask blank
[Solution] A mask blank comprises a multilayer reflective film and a pattern forming thin film in this order on a main surface of a substrate. The thin film is made of a material containing a metal, and when a refractive index of the thin film with respect to light having a wavelength λL of 13.2 nm is represented by nL, a refractive index of the thin film with respect to light having a wavelength λM of 13.5 nm is represented by nM, a refractive index of the thin film with respect to light having a wavelength λH of 13.8 nm is represented by nH, and a coefficient P=[(1−nH)/λH−(1−nL)/λL)]/[(1−nM)/λM] is satisfied, an absolute value of the coefficient P is 0.09 or less.

公开(公告)号：US20180252995A1

公开(公告)日：2018-09-06

申请号：US15760265

申请日：2016-09-08

申请人： HOYA CORPORATION

发明人： Atsushi MATSUMOTO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC分类号： G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F1/42 ,  G03F1/20 ,  H01L21/033

CPC分类号： G03F1/32 ,  G03F1/20 ,  G03F1/42 ,  G03F1/58 ,  G03F1/80 ,  H01L21/0337

摘要： According to the present invention, provided is a mask blank (10), in which; a light shielding film (4) has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film (4) is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film (2) has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A). CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084   Expression (1) 0.04×AS−0.06×AM>1   Expression (A)

公开(公告)号：US20170068155A1

公开(公告)日：2017-03-09

申请号：US15122486

申请日：2015-02-24

申请人： HOYA CORPORATION

发明人： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takashi UCHIDA

IPC分类号： G03F1/30 ,  C23C14/06 ,  C23C14/58 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  C23C14/34 ,  H01L21/033

CPC分类号： G03F1/30 ,  C23C14/0664 ,  C23C14/0676 ,  C23C14/34 ,  C23C14/5873 ,  G03F1/58 ,  G03F1/80 ,  G03F7/2006 ,  G03F7/34 ,  H01L21/0332

摘要： A mask blank having a structure in which, on a transparent substrate, a light shielding film and a hard mask film are laminated in the stated order from the transparent substrate side. The hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure of three layers wherein a lower layer, an intermediate layer, and an upper layer are laminated in the stated order from the transparent substrate side. The upper layer has a lowest content of chromium in the light shielding film, the intermediate layer has a highest content of chromium in the light shielding film. It contains at least one metallic element selected from indium, tin, and molybdenum.

摘要翻译： 从透明基板侧按顺序层叠透明基板上的遮光膜和硬掩模膜的结构的掩模坯料。 硬掩模膜由含有至少一种选自硅和钽的元素的材料形成，并且遮光膜由含铬的材料形成。 掩模毛坯具有三层结构，其中下层，中间层和上层以透明基板侧的顺序层叠。 上层在遮光膜中的铬含量最低，中间层在遮光膜中的铬含量最高。 它含有至少一种选自铟，锡和钼的金属元素。

公开(公告)号：US20220283490A1

公开(公告)日：2022-09-08

申请号：US17635333

申请日：2020-07-13

申请人： HOYA CORPORATION

发明人： Masanori NAKAGAWA ,  Takashi UCHIDA

IPC分类号： G03F1/24

摘要： A substrate with a conductive film for manufacturing a reflective mask, the substrate comprising a conductive film having excellent chemical resistance and a small surface roughness (Rms), is obtained.
A substrate with a conductive film comprises a conductive film on one of two main surfaces of the substrate. The conductive film comprises chromium. The conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side. The lower layer is amorphous. The upper layer has a crystallinity.

公开(公告)号：US20160377975A1

公开(公告)日：2016-12-29

申请号：US15121124

申请日：2014-12-09

申请人： HOYA CORPORATION

发明人： Atsushi MATSUMOTO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC分类号： G03F1/32 ,  G03F7/20

CPC分类号： G03F1/32 ,  G03F1/58 ,  G03F7/2053

摘要： To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1, the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below: CN≦9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084  Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.

摘要翻译： 提供：在将过渡金属硅化物材料用于遮光膜的情况下，具有较薄的遮光膜的相移掩模，同时解决了ArF耐光性的问题; 以及用于制造该相移掩模的掩模坯料。 一种在透光基板（1）上具有相移膜（2）和遮光膜（4）的掩模板（10），其中相移膜（2）由具有ArF耐光性的材料形成 并且至少一层遮光膜（4）由含有过渡金属，硅和氮的材料形成，并满足下面的式（1）的条件。 CN≤9.0×10-6×RM 4 - 1.65×10-4×RM 3 - 7.718×10-2×RM 2 + 3.611×RM - 21.084式（1）在这一点上，RM表示过渡金属 含量相对于上述一层中的过渡金属含量和硅含量的总和，CN表示上述一层中的氮含量。

公开(公告)号：US20230072220A1

公开(公告)日：2023-03-09

申请号：US17793329

申请日：2021-03-11

申请人： HOYA CORPORATION

发明人： Masanori NAKAGAWA ,  Kota SUZUKI ,  Takashi UCHIDA

IPC分类号： G03F1/24 ,  G03F1/52

摘要： Provided is a substrate with a multilayer reflective film capable of sufficiently reducing a reflectance of the multilayer reflective film with respect to EUV exposure light and preventing occurrence of a phenomenon in which a surface of a protective film on the multilayer reflective film swells and a phenomenon in which the protective film peels off.
A substrate with a multilayer reflective film 110 comprises a multilayer reflective film 5 and a protective film 6 in this order on a main surface of a substrate 1. The substrate 1 contains silicon, titanium, and oxygen as main components, and further contains hydrogen. The multilayer reflective film 5 has a structure in which a low refractive index layer and a high refractive index layer are alternately layered. The multilayer reflective film 5 comprises hydrogen. Hydrogen in the multilayer reflective film 5 has an atomic number density of 7.0×10−3 atoms/nm3 or less.

公开(公告)号：US20210364910A1

公开(公告)日：2021-11-25

申请号：US17391593

申请日：2021-08-02

申请人： HOYA CORPORATION

发明人： Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC分类号： G03F1/32

摘要： In the present invention, an etching stopper film (2), a light-blocking film (3) comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film (4) are laminated in that order on a translucent substrate (1). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

公开(公告)号：US20210109436A1

公开(公告)日：2021-04-15

申请号：US16603127

申请日：2018-04-02

申请人： HOYA CORPORATION

发明人： Ryo OHKUBO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC分类号： G03F1/32 ,  H01L21/033

摘要： In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.

公开(公告)号：US20210063866A1

公开(公告)日：2021-03-04

申请号：US17008949

申请日：2020-09-01

申请人： HOYA CORPORATION

发明人： Kazuhiro HAMAMOTO ,  Takashi UCHIDA

IPC分类号： G03F1/24 ,  G02B5/08 ,  G03F7/20 ,  G03F1/26

摘要： A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.

公开(公告)号：US20170075210A1

公开(公告)日：2017-03-16

申请号：US15122453

申请日：2015-02-24

申请人： HOYA CORPORATION

发明人： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takashi UCHIDA

IPC分类号： G03F1/32 ,  H01L21/308 ,  G03F7/20 ,  G03F7/34 ,  G03F1/80 ,  G03F1/58

CPC分类号： G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  H01L21/3081 ,  H01L21/3086

摘要： A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.

摘要翻译： 从透明基板侧按顺序层叠有透明基板上的相移膜，遮光膜和硬掩模膜的结构的掩模坯料。 相移膜由含硅的材料形成，硬掩模膜由含有至少一种选自硅和钽的元素的材料形成，并且遮光膜由含铬的材料形成。 掩模坯料具有层叠以下三层：下层，中间层和上层的结构，在遮光膜中上层具有最高铬含量，中间层具有最低含量 并且含有至少一种选自铟，锡和钼的金属元素。