公开(公告)号：US20090289736A1

公开(公告)日：2009-11-26

申请号：US12125974

申请日：2008-05-23

申请人： Haiwen Xi ,  Dadi Setiadi ,  Insik Jin ,  Yang Li ,  Song Xue

发明人： Haiwen Xi ,  Dadi Setiadi ,  Insik Jin ,  Yang Li ,  Song Xue

IPC分类号： H01P1/10 ,  H01H53/00

CPC分类号： H01H59/0009 ,  H01H57/00

摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.

摘要翻译： 旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。 在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。 该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。 该连接允许将旋转波从第一磁条传输到第二磁条。 第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

公开(公告)号：US20110068825A1

公开(公告)日：2011-03-24

申请号：US12953544

申请日：2010-11-24

申请人： Haiwen Xi ,  Yang Li ,  Song Xue

发明人： Haiwen Xi ,  Yang Li ,  Song Xue

IPC分类号： H03K19/168 ,  H01L29/82

CPC分类号： H03K19/173 ,  G11C11/161 ,  G11C11/1673

摘要： Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer.

摘要翻译： 具有至少一个输入元件和输出元件的自旋扭矩磁逻辑器件。 通过输入元件施加电流，并测量输出元件两端产生的电阻或电压。 输入元件包括自由层，并且输出元件包括电连接到输入元件的自由层的自由层。 输入元件和输出元件的自由层可以通过静磁耦合电连接，或者可以物理耦合。 在一些实施例中，输出元件可以具有多于一个的自由层。

公开(公告)号：US20100227202A1

公开(公告)日：2010-09-09

申请号：US12397457

申请日：2009-03-04

申请人： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

发明人： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC分类号： G11B5/706 ,  G11B5/33 ,  B05D5/12 ,  B44C1/22

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  H01F10/002 ,  H01L21/02112 ,  H01L29/82 ,  Y10T428/115

摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

摘要翻译： 提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。 壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。 因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

公开(公告)号：US20100118579A1

公开(公告)日：2010-05-13

申请号：US12269656

申请日：2008-11-12

申请人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

发明人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

IPC分类号： G11C5/02 ,  G11C11/00 ,  G11C8/00 ,  G11C11/34

CPC分类号： H01L27/24 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/75 ,  H01L27/228

摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

摘要翻译： 各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。 每个单元电池包括与开关元件并联连接的电阻感测元件。 电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。 每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

公开(公告)号：US08455117B2

公开(公告)日：2013-06-04

申请号：US12397457

申请日：2009-03-04

申请人： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

发明人： Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC分类号： H01L29/82 ,  H01F10/32 ,  G11B5/74 ,  H01F10/00 ,  H01L21/02

CPC分类号： G11B5/855 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  H01F10/002 ,  H01L21/02112 ,  H01L29/82 ,  Y10T428/115

摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

摘要翻译： 提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。 壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。 因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

公开(公告)号：US08004874B2

公开(公告)日：2011-08-23

申请号：US12412644

申请日：2009-03-27

申请人： Haiwen Xi ,  Kaizhong Gao ,  Song Xue

发明人： Haiwen Xi ,  Kaizhong Gao ,  Song Xue

IPC分类号： G11C11/00 ,  G11C43/02

CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/76 ,  H01L45/04 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147

摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.

摘要翻译： 本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。 可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。 在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。 该设备可以包括共享的第四电极以提供额外的编程能力。 在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

公开(公告)号：US20110032749A1

公开(公告)日：2011-02-10

申请号：US12903716

申请日：2010-10-13

申请人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

发明人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

IPC分类号： G11C11/34 ,  H01L45/00

CPC分类号： H01L27/24 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/75 ,  H01L27/228

摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

摘要翻译： 各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。 每个单元电池包括与开关元件并联连接的电阻感测元件。 电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。 每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

公开(公告)号：US07830693B2

公开(公告)日：2010-11-09

申请号：US12269656

申请日：2008-11-12

申请人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

发明人： Harry Hongyue Liu ,  Haiwen Xi ,  Antoine Khoueir ,  Song Xue

IPC分类号： G11C5/02

CPC分类号： H01L27/24 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/75 ,  H01L27/228

摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.

摘要翻译： 各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。 每个单元电池包括与开关元件并联连接的电阻感测元件。 电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。 每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

公开(公告)号：US20100277969A1

公开(公告)日：2010-11-04

申请号：US12835791

申请日：2010-07-14

申请人： Shaoping Li ,  Insik Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

发明人： Shaoping Li ,  Insik Jin ,  Zheng Gao ,  Eileen Yan ,  Kaizhong Gao ,  Haiwen Xi ,  Song Xue

IPC分类号： G11C11/00 ,  H01L45/00

CPC分类号： G11C13/0007 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/52 ,  G11C2213/72 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/122 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1666

摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

摘要翻译： 一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

公开(公告)号：US20100075599A1

公开(公告)日：2010-03-25

申请号：US12234929

申请日：2008-09-22

申请人： Haiwen Xi ,  Song Xue ,  Dexin Wang ,  Dimitar V. Dimitrov

发明人： Haiwen Xi ,  Song Xue ,  Dexin Wang ,  Dimitar V. Dimitrov

IPC分类号： H04B7/00

CPC分类号： G11C11/14 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  H01L27/22

摘要： Devices are proposed for use in nanoscale data transfer and exchange between electronic components. Spin wave generators translate an input signal charge-carrier based signal to spin waves within a ferromagnetic stripe. The spin waves propagate along the ferromagnetic stripe and are detected by spin wave detectors. Further, signal transfer devices such as a splitter, mixer, and switch are disclosed. Embodiments of the invention provide a solution for replacing copper connections, which is a limiting factor in current and future development of high-performance chips.

摘要翻译： 设备被用于纳米级数据传输和电子元件间的交换。 旋转波发生器将输入信号基于电荷载波的信号转换为铁磁条纹内的自旋波。 自旋波沿铁磁条传播，并通过自旋波检测器检测。 此外，公开了诸如分路器，混频器和开关的信号传输装置。 本发明的实施例提供了一种用于替代铜连接的解决方案，这是高性能芯片的当前和未来发展的限制因素。