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公开(公告)号：US07851136B2
公开(公告)日：2010-12-14
申请号：US11421327
申请日：2006-05-31
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0035
摘要： An integrated circuit fabrication process as described herein employs a photoresist stabilization step where patterned photoresist material is exposed to radiation having a wavelength that promotes cross-linking in the shallow surfaces of the patterned photoresist features. The patterned photoresist material is highly absorptive of the stabilizing radiation, which results in the surface cross-linking and modification of the outer surfaces of the patterned photoresist material. This modified “shell” is immune to photoresist developer, photoresist solvents, intense ion implantation, and intense etchants. The shell also enables for the resist not to deform when baked at a temperature above its glass transition temperature. For example, the photoresist stabilization technique can be used in a double exposure process such that a patterned photoresist layer remains intact during a subsequent lithographic sub-process.
摘要翻译： 如本文所述的集成电路制造方法采用光致抗蚀剂稳定步骤，其中图案化的光致抗蚀剂材料暴露于具有促进图案化光致抗蚀剂特征的浅表面中的交联的波长的辐射。 图案化的光致抗蚀剂材料对稳定辐射是高度吸收的，这导致图案化光致抗蚀剂材料的外表面的表面交联和修饰。 这种改性的“壳”对光致抗蚀剂显影剂，光致抗蚀剂溶剂，强离子注入和强蚀刻剂是免疫的。 壳体还使得当在高于其玻璃化转变温度的温度下烘烤时，抗蚀剂不会变形。 例如，光致抗蚀剂稳定技术可以用于双重曝光工艺中，使得图案化的光致抗蚀剂层在随后的光刻子过程期间保持完整。
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公开(公告)号：US20070281248A1
公开(公告)日：2007-12-06
申请号：US11421327
申请日：2006-05-31
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0035
摘要： An integrated circuit fabrication process as described herein employs a photoresist stabilization step where patterned photoresist material is exposed to radiation having a wavelength that promotes cross-linking in the shallow surfaces of the patterned photoresist features. The patterned photoresist material is highly absorptive of the stabilizing radiation, which results in the surface cross-linking and modification of the outer surfaces of the patterned photoresist material. This modified “shell” is immune to photoresist developer, photoresist solvents, intense ion implantation, and intense etchants. The shell also enables for the resist not to deform when baked at a temperature above its glass transition temperature. For example, the photoresist stabilization technique can be used in a double exposure process such that a patterned photoresist layer remains intact during a subsequent lithographic sub-process.
摘要翻译： 如本文所述的集成电路制造方法采用光致抗蚀剂稳定步骤，其中图案化的光致抗蚀剂材料暴露于具有促进图案化光致抗蚀剂特征的浅表面中的交联的波长的辐射。 图案化的光致抗蚀剂材料对稳定辐射是高度吸收的，这导致图案化光致抗蚀剂材料的外表面的表面交联和修饰。 这种改性的“壳”对光致抗蚀剂显影剂，光致抗蚀剂溶剂，强离子注入和强蚀刻剂是免疫的。 壳体还使得当在高于其玻璃化转变温度的温度下烘烤时，抗蚀剂不会变形。 例如，光致抗蚀剂稳定技术可以用于双重曝光工艺中，使得图案化的光致抗蚀剂层在随后的光刻子过程期间保持完整。
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公开(公告)号：US08642474B2
公开(公告)日：2014-02-04
申请号：US11775727
申请日：2007-07-10
IPC分类号： H01L21/311
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0274 , H01L21/32139
摘要： Ultrafine dimensions are accurately and efficiently formed in a target layer using a spacer lithographic technique comprising forming a first mask pattern, forming a cross-linkable layer over the first mask pattern, forming a cross-linked spacer between the first mask pattern and cross-linkable layer, removing the cross-linkable layer, cross-linked spacer from the upper surface of the first mask pattern and the first mask pattern to form a second mask pattern comprising remaining portions of the cross-linked spacer, and etching using the second mask pattern to form an ultrafine pattern in the underlying target layer. Embodiments include forming the first mask pattern from a photoresist material capable of generating an acid, depositing a cross-linkable material comprising a material capable of undergoing a cross-linking reaction in the presence of an acid, and removing portions of the non-cross-linked layer and cross-linked spacer from the upper surface of the first mask pattern before removing the remaining portions of the first mask pattern and remaining noncross-linked layer.
摘要翻译： 使用间隔光刻技术在目标层中精确有效地形成超细尺寸，包括形成第一掩模图案，在第一掩模图案之上形成可交联层，在第一掩模图案和可交联的第一掩模图案之间形成交联间隔物 从第一掩模图案的上表面和第一掩模图案移除可交联层，交联间隔物以形成包括交联间隔物的剩余部分的第二掩模图案，并使用第二掩模图案进行蚀刻 以在底层目标层中形成超细纹理图案。 实施例包括从能够产生酸的光致抗蚀剂材料形成第一掩模图案;沉积包含可在酸存在下进行交联反应的材料的可交联材料，以及去除部分非交联材料; 在去除第一掩模图案的剩余部分和剩余的非交联层之前，从第一掩模图案的上表面连接层和交联间隔物。
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公开(公告)号：US20090023298A1
公开(公告)日：2009-01-22
申请号：US11778852
申请日：2007-07-17
申请人： Yunfei Deng , Ryoung-han Kim , Thomas I. Wallow
发明人： Yunfei Deng , Ryoung-han Kim , Thomas I. Wallow
IPC分类号： H01L21/31
CPC分类号： H01L21/0337 , Y10S438/947
摘要： Ultrafine dimensions, smaller than conventional lithographic capabilities, are formed employing an efficient inverse spacer technique comprising selectively removing spacers. Embodiments include forming a first mask pattern over a target layer, forming a spacer layer on the upper and side surfaces of the first mask pattern leaving intermediate spaces, depositing a material in the intermediate spacers leaving the spacer layer exposed, selectively removing the spacer layer to form a second mask pattern having openings exposing the target layer, and etching the target layer through the second mask pattern.
摘要翻译： 采用有选择地去除间隔物的有效的逆间隔技术来形成小于常规光刻能力的超细尺寸。 实施例包括在目标层上形成第一掩模图案，在第一掩模图案的上表面和侧表面上形成间隔层，留下中间空间，在间隔层暴露的中间间隔物中沉积材料，选择性地除去间隔层， 形成具有暴露目标层的开口的第二掩模图案，并且通过第二掩模图案蚀刻目标层。
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公开(公告)号：US07718529B2
公开(公告)日：2010-05-18
申请号：US11778852
申请日：2007-07-17
申请人： Yunfei Deng , Ryoung-han Kim , Thomas I. Wallow
发明人： Yunfei Deng , Ryoung-han Kim , Thomas I. Wallow
IPC分类号： H01L21/00
CPC分类号： H01L21/0337 , Y10S438/947
摘要： Ultrafine dimensions, smaller than conventional lithographic capabilities, are formed employing an efficient inverse spacer technique comprising selectively removing spacers. Embodiments include forming a first mask pattern over a target layer, forming a spacer layer on the upper and side surfaces of the first mask pattern leaving intermediate spaces, depositing a material in the intermediate spacers leaving the spacer layer exposed, selectively removing the spacer layer to form a second mask pattern having openings exposing the target layer, and etching the target layer through the second mask pattern.
摘要翻译： 采用有选择地去除间隔物的有效的逆间隔技术来形成小于常规光刻能力的超细尺寸。 实施例包括在目标层上形成第一掩模图案，在第一掩模图案的上表面和侧表面上形成间隔层，留下中间空间，在间隔层暴露的中间间隔物中沉积材料，选择性地除去间隔层， 形成具有暴露目标层的开口的第二掩模图案，并且通过第二掩模图案蚀刻目标层。
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公开(公告)号：US20090017628A1
公开(公告)日：2009-01-15
申请号：US11775727
申请日：2007-07-10
IPC分类号： H01L21/311
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0274 , H01L21/32139
摘要： Ultrafine dimensions are accurately and efficiently formed in a target layer using a spacer lithographic technique comprising forming a first mask pattern, forming a cross-linkable layer over the first mask pattern, forming a cross-linked spacer between the first mask pattern and cross-linkable layer, removing the cross-linkable layer, cross-linked spacer from the upper surface of the first mask pattern and the first mask pattern to form a second mask pattern comprising remaining portions of the cross-linked spacer, and etching using the second mask pattern to form an ultrafine pattern in the underlying target layer. Embodiments include forming the first mask pattern from a photoresist material capable of generating an acid, depositing a cross-linkable material comprising a material capable of undergoing a cross-linking reaction in the presence of an acid, and removing portions of the non-cross-linked layer and cross-linked spacer from the upper surface of the first mask pattern before removing the remaining portions of the first mask pattern and remaining noncross-linked layer.
摘要翻译： 使用间隔光刻技术在目标层中精确有效地形成超细尺寸，包括形成第一掩模图案，在第一掩模图案之上形成可交联层，在第一掩模图案和可交联的第一掩模图案之间形成交联间隔物 从第一掩模图案的上表面和第一掩模图案移除可交联层，交联间隔物以形成包括交联间隔物的剩余部分的第二掩模图案，并使用第二掩模图案进行蚀刻 以在底层目标层中形成超细纹理图案。 实施例包括从能够产生酸的光致抗蚀剂材料形成第一掩模图案;沉积包含可在酸存在下进行交联反应的材料的可交联材料，以及去除部分非交联材料; 在去除第一掩模图案的剩余部分和剩余的非交联层之前，从第一掩模图案的上表面连接层和交联间隔物。
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公开(公告)号：US20080292991A1
公开(公告)日：2008-11-27
申请号：US11753443
申请日：2007-05-24
申请人： Thomas I. Wallow , Ryoung-Han Kim , Jongwook Kye
发明人： Thomas I. Wallow , Ryoung-Han Kim , Jongwook Kye
CPC分类号： G03F7/0035 , G03F7/168 , H01L21/0273 , H01L21/3086
摘要： An integrated circuit fabrication process as described herein employs a double photoresist exposure technique. After creation of a first pattern of photoresist features on a wafer, a second photoresist layer is formed over the first pattern of photoresist features. The second photoresist layer is subjected to a reflow step that softens and relaxes the second photoresist material. This reflow step causes the exposed surface of the second photoresist layer to become substantially planar. Thereafter, the second photoresist layer can be exposed and developed to create a second pattern of photoresist features on the wafer. The planar surface of the second photoresist layer, which results from the reflow step, facilitates the creation of accurate, precise, and “high fidelity” photoresist features from the second photoresist material.
摘要翻译： 本文所述的集成电路制造工艺采用双光致抗蚀剂曝光技术。 在晶片上形成光致抗蚀剂特征的第一图案之后，在光致抗蚀剂特征的第一图案之上形成第二光致抗蚀剂层。 对第二光致抗蚀剂层进行软化和松弛第二光致抗蚀剂材料的回流步骤。 该回流步骤使得第二光致抗蚀剂层的暴露表面变得基本上平坦。 此后，可以对第二光致抗蚀剂层进行曝光和显影以在晶片上产生光致抗蚀剂特征的第二图案。 由回流步骤产生的第二光致抗蚀剂层的平坦表面有助于从第二光致抗蚀剂材料产生准确，精确和“高保真”的光致抗蚀剂特征。
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公开(公告)号：US06525153B1
公开(公告)日：2003-02-25
申请号：US09521351
申请日：2000-03-09
申请人： Saikumar Jayaraman , Brian L. Goodall , Richard Vicari , John-Henry Lipian , Robert David Allen , Juliann Opitz , Thomas I. Wallow
发明人： Saikumar Jayaraman , Brian L. Goodall , Richard Vicari , John-Henry Lipian , Robert David Allen , Juliann Opitz , Thomas I. Wallow
IPC分类号： C08F1000
CPC分类号： C08G61/122 , C08G61/08 , G03F7/0045 , G03F7/039 , G03F7/0395
摘要： Polymers comprising polycyclic repeating units containing pendant anhydride moieties are disclosed. The polymer can be polymerized from polycycloolefins containing pendant anhydride moieties in the presence of a nickel containing single component catalyst. In optional embodiments the polycycloolefin monomer containing the pendant anhydride functionality can be copolymerized with other polycycloolefin monomers that contain pendant functional groups to yield random copolymer products.
摘要翻译： 公开了包含含有侧链酸酐部分的多环重复单元的聚合物。 聚合物可以在含镍单组分催化剂的存在下由含有侧链酸酐部分的聚环烯烃聚合。 在任选的实施方案中，含有侧链官能团的聚环烯烃单体可与含有侧链官能团的其它聚环烯烃单体共聚以产生无规共聚物产物。
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公开(公告)号：US6165673A
公开(公告)日：2000-12-26
申请号：US813245
申请日：1997-03-07
申请人： Gregory Breyta , Richard Anthony DiPietro , Donald Clifford Hofer , Hiroshi Ito , Robert David Allen , Juliann Opitz , Thomas I. Wallow
发明人： Gregory Breyta , Richard Anthony DiPietro , Donald Clifford Hofer , Hiroshi Ito , Robert David Allen , Juliann Opitz , Thomas I. Wallow
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/122 , Y10S430/126
摘要： The invention relates to a polymeric, radiation-sensitive resist composition comprising (i) iodonium sulfonate radiation sensitive acid generator; (ii) a polymer; and (iii) an acid labile compound.
摘要翻译： 本发明涉及一种聚合物，辐射敏感性抗蚀剂组合物，其包含（i）碘磺酸盐辐射敏感性酸产生剂; （ii）聚合物; 和（iii）酸不稳定化合物。
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公开(公告)号：US06677419B1
公开(公告)日：2004-01-13
申请号：US10293740
申请日：2002-11-13
申请人： Phillip J. Brock , Eiichi Kobayashi , Isao Nishimura , Yukio Nishimura , Thomas I. Wallow , Masafumi Yamamoto
发明人： Phillip J. Brock , Eiichi Kobayashi , Isao Nishimura , Yukio Nishimura , Thomas I. Wallow , Masafumi Yamamoto
IPC分类号： C08F1000
CPC分类号： C08F232/08 , C08F220/06 , C08F220/18 , C08F220/28
摘要： A scaleable and high-yielding method of preparing copolymers that is useful as a component of a radiation sensitive resin composition is provided. The method includes the step of reacting at least one monomer A which is an unsaturated alicyclic monomer and forms a polymer main chain by dissociation of the unsaturated bond, and at least one unsaturated monomer B, which also forms a polymer chain by dissociation of an unsaturated bond, wherein less than two electron-withdrawing groups are directly appended to said unsaturation, and where said monomer B is other than the unsaturated alicyclic monomer and forms a polymer main chain, in the presence of a free radical initiator. The reacting step is carried out in a stoichiometric excess of monomer A as compared to monomer B. By carrying out the reacting step in an excess of monomer A as compared to monomer B, the resultant copolymer will have a greater molar concentration of monomer A than is obtainable using other methods.
摘要翻译： 提供了可用作辐射敏感性树脂组合物的组分的共聚物的可扩展和高产率的方法。 所述方法包括使至少一种不饱和脂环族单体的单体A与不饱和键解离形成聚合物主链的至少一种不饱和单体B，其通过不饱和键解离形成聚合物链 键，其中少于两个吸电子基团直接连接到所述不饱和基团上，并且其中所述单体B不同于不饱和脂环族单体并形成聚合物主链，在自由基引发剂存在下。 与单体B相比，反应步骤在化学计量过量的单体A中进行。通过与单体B相比，通过进行过量单体A的反应步骤，所得共聚物将具有比单体A更大的摩尔浓度 可以使用其他方法获得。
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