摘要:
Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
摘要:
A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.
摘要:
A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要:
A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.
摘要:
In a photomask blank comprising a transparent substrate, an optical film of material containing a transition metal and silicon, and a hard mask film, the hard mask film is a multilayer film including a first layer of a chromium-based material containing 20-60 atom % of oxygen and a second layer of a chromium-based material containing at least 50 atom % of chromium and less than 20 atom % of oxygen. The hard mask film having a thickness of 2.0 nm to less than 10 nm is resistant to fluorine dry etching.
摘要:
A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.
摘要:
The signal processing circuit includes: a buffer memory for temporarily storing a shot image; and a moving-picture detection device for detecting whether or not the shot image is a moving picture. Whether to store the shot image in the buffer memory as a moving memory, as a still picture, or as both a moving picture and a still picture is determined according to the detection result of the moving-picture detection device.
摘要:
An image display apparatus includes an image generation source, optics for projecting in an enlarged form the image generated by the image generation source, and a transmissive screen for displaying the image projected from said optics. The transmissive screen includes a Fresnel lens sheet disposed at an image generation source side, and a diffusing sheet disposed at an image-watching side in order to diffuse image light at least in a horizontal direction of the screen. The Fresnel lens sheet has a plurality of entrance-side prisms formed at the image generation source side, and a plurality of exit-side prisms formed at the image-watching side, and the Fresnel lens sheet emits lights in a first direction and a second direction. The first direction is almost parallel to a central axis of the Fresnel lens sheet, and the second direction extends toward the central axis.
摘要:
There is disclosed a substrate to be processed having laminated thereon a resist film for electron beam and an organic conductive film, in which at least a resist film for electron beam and an organic conductive film are laminated in order on a substrate to be processed having a conductive inorganic thin film as its surface layer, wherein a surface to be processed of the substrate to be processed has an area of direct contact between the organic conductive film and the conductive inorganic thin film in part thereof. There can be a substrate to be processed capable of forming a resist pattern stably and accurately with efficient removal of electricity even when an electron beam with high current density is irradiated.
摘要:
A projection image display device is disclosed in which a trapezoidal distortion and/or aberration are restrained when an image is enlarged and projected obliquely onto a screen. An image generator is connected to an optical system base in such a manner that at least an inclination thereof (on an axis parallel to X axis) with respect to a vertical line and a distance thereof in forward and backward direction (Z axis direction) can be adjusted by an adjusting mechanism. Further, a projecting lens 2 as a first optical system and a free-form curved surface mirror as a second optical system are fixed to the optical system base. The free-form curved surface mirror is rotatable (on an rotary axis parallel to X axis) with respect to the vertical line at a substantial center of the free-form curved surface mirror.