公开(公告)号：US20120100467A1

公开(公告)日：2012-04-26

申请号：US13273656

申请日：2011-10-14

申请人： Hideo KANEKO ,  Yokio INAZUKI ,  Hiroki YOSHIKAWA

发明人： Hideo KANEKO ,  Yokio INAZUKI ,  Hiroki YOSHIKAWA

IPC分类号： C23C14/06 ,  G03F1/50 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C23C14/0036 ,  C23C14/0676 ,  C23C14/564 ,  G03F1/54

摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

摘要翻译： 提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。 使用在室温下电阻率为20Ω·cm·cm以上的硅靶材料形成含硅膜。 硅靶材料可以是多晶的或非晶的。 然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。 此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。 此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。 根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。

公开(公告)号：US20120138453A1

公开(公告)日：2012-06-07

申请号：US13302543

申请日：2011-11-22

申请人： Hiroki YOSHIKAWA ,  Yokio Inazuki ,  Hideo Kaneko

发明人： Hiroki YOSHIKAWA ,  Yokio Inazuki ,  Hideo Kaneko

IPC分类号： C23C14/06 ,  C23C14/34

CPC分类号： H01J37/3426 ,  C23C14/0676 ,  C23C14/14 ,  C23C14/3407 ,  C23C14/3414

摘要： A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.

摘要翻译： 提供一种用于溅射成膜的硅靶，其能够通过抑制溅射成膜期间的粉尘产生而形成高质量的含硅薄膜。 n型硅靶材料10和金属背板20经由接合层40彼此附接。由具有比硅靶材料10的功函数小的材料制成的导电层30设置在 接合层40侧的硅靶材10的表面。 也就是说，硅靶材料10经由导电层30和接合层40附着到金属背板20.在单晶硅的情况下，n型硅的功函数通常为4.05eV。 导电层30的材料的功函数需要小于4.05eV。

公开(公告)号：US20120064438A1

公开(公告)日：2012-03-15

申请号：US13228501

申请日：2011-09-09

申请人： Hiroki YOSHIKAWA ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Takashi Haraguchi ,  Yosuke Kojima ,  Tomohito Hirose

发明人： Hiroki YOSHIKAWA ,  Yukio Inazuki ,  Ryuji Koitabashi ,  Hideo Kaneko ,  Takashi Haraguchi ,  Yosuke Kojima ,  Tomohito Hirose

IPC分类号： G03F7/20 ,  H01L21/31 ,  G03F1/00

CPC分类号： G03F1/72 ,  G03F1/32 ,  G03F1/48 ,  G03F1/50

摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.

摘要翻译： 光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

公开(公告)号：US20100316942A1

公开(公告)日：2010-12-16

申请号：US12813137

申请日：2010-06-10

申请人： Shinichi IGARASHI ,  Yukio INAZUKI ,  Hideo KANEKO ,  Hiroki YOSHIKAWA ,  Yoshinori KINASE

发明人： Shinichi IGARASHI ,  Yukio INAZUKI ,  Hideo KANEKO ,  Hiroki YOSHIKAWA ,  Yoshinori KINASE

IPC分类号： G03F1/00

CPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/32 ,  G03F1/80

摘要： A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.

摘要翻译： 光掩模由包括透明基板和由含过渡金属的硅基材料的上层和下层组成的遮光膜的光掩模坯料制造，上层中的O + N的含量高于下层的含量 层。 遮光膜通过氟干蚀刻通过抗蚀剂图案进行两步加工，使得膜的下部留下，并且含氧氯干蚀刻用于除去膜的其余部分。

公开(公告)号：US20130059235A1

公开(公告)日：2013-03-07

申请号：US13590315

申请日：2012-08-21

申请人： Yukio INAZUKI ,  Shinichi IGARASHI ,  Kazuhiro NISHIKAWA ,  Hiroki YOSHIKAWA

发明人： Yukio INAZUKI ,  Shinichi IGARASHI ,  Kazuhiro NISHIKAWA ,  Hiroki YOSHIKAWA

IPC分类号： G03F1/00 ,  G03F1/76 ,  G03F1/50 ,  B82Y30/00

CPC分类号： G03F1/26 ,  G03F1/14 ,  G03F1/38 ,  G03F1/50

摘要： In a photomask blank comprising a transparent substrate, an optical film of material containing a transition metal and silicon, and a hard mask film, the hard mask film is a multilayer film including a first layer of a chromium-based material containing 20-60 atom % of oxygen and a second layer of a chromium-based material containing at least 50 atom % of chromium and less than 20 atom % of oxygen. The hard mask film having a thickness of 2.0 nm to less than 10 nm is resistant to fluorine dry etching.

摘要翻译： 在包含透明基板的光掩模坯料，含有过渡金属和硅的材料的光学膜和硬掩模膜中，硬掩模膜是包括含有20-60个原子的铬基材料的第一层的多层膜 氧的百分比和含有至少50原子％的铬和小于20原子％的氧的铬基材料的第二层。 具有2.0nm至小于10nm厚度的硬掩模膜耐氟干蚀刻。

公开(公告)号：US20090057143A1

公开(公告)日：2009-03-05

申请号：US12259603

申请日：2008-10-28

申请人： Hiroki YOSHIKAWA ,  Toshinobu ISHIHARA ,  Satoshi OKAZAKI ,  Yukio INAZUKI ,  Tadashi SAGA ,  Kimihiro OKADA ,  Masahide IWAKATA ,  Takashi HARAGUCHI ,  Yuichi FUKUSHIMA

发明人： Hiroki YOSHIKAWA ,  Toshinobu ISHIHARA ,  Satoshi OKAZAKI ,  Yukio INAZUKI ,  Tadashi SAGA ,  Kimihiro OKADA ,  Masahide IWAKATA ,  Takashi HARAGUCHI ,  Yuichi FUKUSHIMA

IPC分类号： C23C14/14

CPC分类号： G03F1/32 ,  C23C14/06 ,  C23C14/3414 ,  C23C14/3464

摘要： A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.

摘要翻译： 用于制造半色调相移掩模坯料的成膜靶材包括透明基板和具有受控相位和透射率的一层或多层的半透明膜，至少一层半透明膜包括硅，钼和 锆，以及至少两种元素，Zr / Mo摩尔比为0.05和5之间的锆和钼。

公开(公告)号：US20090033754A1

公开(公告)日：2009-02-05

申请号：US12184476

申请日：2008-08-01

申请人： Hiroki YOSHIKAWA

发明人： Hiroki YOSHIKAWA

IPC分类号： H04N5/225 ,  G09G5/36

CPC分类号： H04N5/77 ,  H04N9/8042

摘要： The signal processing circuit includes: a buffer memory for temporarily storing a shot image; and a moving-picture detection device for detecting whether or not the shot image is a moving picture. Whether to store the shot image in the buffer memory as a moving memory, as a still picture, or as both a moving picture and a still picture is determined according to the detection result of the moving-picture detection device.

摘要翻译： 信号处理电路包括：暂存存储镜头图像的缓冲存储器; 以及用于检测拍摄图像是否是运动图像的运动图像检测装置。 根据运动图像检测装置的检测结果，确定是否将拍摄图像作为移动存储器存储，作为静止图像，或作为运动图像和静止图像两者。

公开(公告)号：US20080204868A1

公开(公告)日：2008-08-28

申请号：US12103241

申请日：2008-04-15

申请人： Hiroki YOSHIKAWA ,  Tetsu Ohishi ,  Koji Hirata ,  Daisuke Imafuku

发明人： Hiroki YOSHIKAWA ,  Tetsu Ohishi ,  Koji Hirata ,  Daisuke Imafuku

IPC分类号： G03B21/60

CPC分类号： G03B21/625

摘要： An image display apparatus includes an image generation source, optics for projecting in an enlarged form the image generated by the image generation source, and a transmissive screen for displaying the image projected from said optics. The transmissive screen includes a Fresnel lens sheet disposed at an image generation source side, and a diffusing sheet disposed at an image-watching side in order to diffuse image light at least in a horizontal direction of the screen. The Fresnel lens sheet has a plurality of entrance-side prisms formed at the image generation source side, and a plurality of exit-side prisms formed at the image-watching side, and the Fresnel lens sheet emits lights in a first direction and a second direction. The first direction is almost parallel to a central axis of the Fresnel lens sheet, and the second direction extends toward the central axis.

摘要翻译： 图像显示装置包括图像生成源，用于以放大的形式投影由图像生成源生成的图像的光学器件和用于显示从所述光学器件投影的图像的透射屏幕。 透射屏幕包括设置在图像产生源侧的菲涅尔透镜片和设置在图像观看侧的扩散片，以至少在屏幕的水平方向上扩散图像光。 菲涅尔透镜片具有形成在图像产生源侧的多个入射侧棱镜和形成在图像观看侧的多个出射侧棱镜，并且菲涅耳透镜片在第一方向上发光，而第二 方向。 第一方向几乎平行于菲涅尔透镜片的中心轴线，第二方向朝向中心轴线延伸。

公开(公告)号：US20120021341A1

公开(公告)日：2012-01-26

申请号：US13168446

申请日：2011-06-24

申请人： Satoshi WATANABE ,  Hiroki YOSHIKAWA

发明人： Satoshi WATANABE ,  Hiroki YOSHIKAWA

IPC分类号： G03C1/00 ,  G03F7/20 ,  B05D5/12 ,  G03F7/004

CPC分类号： G03F1/78 ,  H01J2237/004 ,  H01J2237/31796

摘要： There is disclosed a substrate to be processed having laminated thereon a resist film for electron beam and an organic conductive film, in which at least a resist film for electron beam and an organic conductive film are laminated in order on a substrate to be processed having a conductive inorganic thin film as its surface layer, wherein a surface to be processed of the substrate to be processed has an area of direct contact between the organic conductive film and the conductive inorganic thin film in part thereof. There can be a substrate to be processed capable of forming a resist pattern stably and accurately with efficient removal of electricity even when an electron beam with high current density is irradiated.

摘要翻译： 公开了一种在其上层压有用于电子束的抗蚀剂膜和有机导电膜的待处理衬底，其中至少将用于电子束的抗蚀剂膜和有机导电膜按顺序层压在待处理的衬底上，具有 导电性无机薄膜作为其表面层，其中被处理基板的被处理面在其一部分具有有机导电膜与导电性无机薄膜之间直接接触的面积。 即使照射具有高电流密度的电子束，也可以具有能够稳定且准确地形成抗蚀剂图案而能够有效地去除电力的待处理基板。

公开(公告)号：US20110205499A1

公开(公告)日：2011-08-25

申请号：US13099784

申请日：2011-05-03

申请人： Hiroki YOSHIKAWA ,  Takanori HISADA ,  Tetsu OHISHI ,  Koji HIRATA ,  Naoyuki OGURA

发明人： Hiroki YOSHIKAWA ,  Takanori HISADA ,  Tetsu OHISHI ,  Koji HIRATA ,  Naoyuki OGURA

IPC分类号： G03B21/26 ,  G03B21/28

CPC分类号： G02B17/0852

摘要： A projection image display device is disclosed in which a trapezoidal distortion and/or aberration are restrained when an image is enlarged and projected obliquely onto a screen. An image generator is connected to an optical system base in such a manner that at least an inclination thereof (on an axis parallel to X axis) with respect to a vertical line and a distance thereof in forward and backward direction (Z axis direction) can be adjusted by an adjusting mechanism. Further, a projecting lens 2 as a first optical system and a free-form curved surface mirror as a second optical system are fixed to the optical system base. The free-form curved surface mirror is rotatable (on an rotary axis parallel to X axis) with respect to the vertical line at a substantial center of the free-form curved surface mirror.

摘要翻译： 公开了一种投影图像显示装置，其中当图像被放大并倾斜地投影到屏幕上时，限制了梯形失真和/或像差。 图像发生器以这样的方式连接到光学系统基座，使得至少其相对于垂直线（在X轴上平行的轴线）的倾斜度及其在前后方向（Z轴方向）上的距离可以 通过调整机构进行调整。 此外，作为第一光学系统的投影透镜2和作为第二光学系统的自由曲面镜被固定到光学系统基座。 自由曲面镜在相对于自由曲面镜的大致中心处的垂直线是可旋转的（在平行于X轴的旋转轴上）。