摘要:
A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb1+a(ZrxTi1−x)O3+a(0.2≦a≦0.6 and 0.50≦x≦0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region (24) having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region (25) of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region (24) having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).
摘要翻译:压电薄膜可实现较大的压电位移。 压电薄膜的化学组成由Pb 1 + a(Zr x 1 Ti 1-x O)O 3+表示, (0.2 <= a <= 0.6和0.50 <= x <= 0.62)。 压电薄膜的晶体结构是具有离子缺陷的钙钛矿柱状晶体区域(24)的混合物,其中一部分氧离子,钛离子和锆离子的构成元素缺失,钙钛矿 没有离子缺陷的化学计量组成的柱状晶体区域(25)。 这种结构允许通过具有离子缺陷的钙钛矿柱状晶体区域(24)使晶体中的残余压缩应力松弛,从而实现大的压电位移(位移量)。
摘要:
The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.
摘要:
To manufacture a compact and high-performance thin-film piezoelectric bimorph element at low cost, first and second piezoelectric thin films (2, 3) are formed by sputtering on the both surfaces of a metal thin plate (1) which are opposing relation to each other along the thickness thereof, while the respective states of polarizations of the first and second piezoelectric thin films (2, 3) are controlled. A pair of electrode films (5) are formed on the respective surfaces of the first and second piezoelectric thin films (2, 3) opposite to the metal thin plate (1).
摘要:
There is provided an ink-jet head having ink outlets formed at a high density for use in an ink-jet recorder. The ink-jet head comprises ink outlets, compression chambers communicating with the ink outlets, and piezoelectric vibration sections, each being provided on a part of each of the compression chambers and including a piezoelectric film containing Pb, Ti and Zr, and electrodes provided on both sides of the piezoelectric film. The piezoelectric film comprises a first layer and a second layer which each have a perovskite structure and are formed in contact with each other, wherein the first layer is formed as a layer containing no Zr or as a layer containing a smaller amount of Zr than that contained in the second layer.
摘要:
An acceleration sensor 201 comprises a longitudinal effect type detection unit 203 and a lateral effect type detection unit 204. The longitudinal effect type detection unit 203 comprises a longitudinal effect type piezoelectric element 211 comprising a piezoelectric body 211a of a thin film, an electrode 211b and an electrode 211c, which is formed on a deposition substrate 221 serving also as a weight. The lateral effect type detection unit 204 is constituted by providing a lateral effect type piezoelectric element 213 comprising a piezoelectric body 213a of a thin film, an electrode 213b and an electrode 213c, which is formed on the deposition substrate 221 and is cantilevered above a groovy recessed part 105a on a substrate 105. A detection circuit 116 detects an acceleration in a predetermined direction, based on an output of both the longitudinal effect type detection unit 203 and the lateral effect type detection unit 204. Consequently, it is possible to detect an acceleration in a predetermined direction and to make a wider dynamic range and a wider band.
摘要:
A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
摘要:
A temperature sensor element for measuring the temperature of exhaust gas from car engines comprises a metallic support having a shape of a flat board, a first electric-insulating film existing on the support, a first temperature sensitive film existing on the first electric-insulating film and having a pair of electrodes, and a second electric-insulating film existing on the temperature sensitive film. The element is superior in thermal shock resistance. The element needs no heat-resistant cap. The element is superior in heat-response since the element has a small heat capacity.
摘要:
A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.
摘要:
A piezoelectric thin film element D, in which a piezoelectric thin film 1 with first and second electrode films 2 and 3 respectively formed on its opposite surfaces in the thickness direction is held by a hold film 5, is fabricated by forming each film 1, 2, 3, and 5 on a film formation substrate 11 and removing the film formation substrate 11 by etching. Even when the hold film 5 is made of material such as resin and therefore exhibits relatively poor adhesion with respect to the other films, the piezoelectric thin film 1 is protected from damage by etchant because the first electrode film 2 which comes into contact with the film formation substrate 11 is formed such that the overall circumference of a peripheral edge portion of the first electrode film 2 laterally extends beyond the lateral surface of the piezoelectric thin film 1 and closely adheres to the hold film 5.
摘要:
A fluid ejection device, such as for an ink jet printer or the like, having increased increasing nozzle density. A through-hole (15) is provided in a glass substrate (18) to which a second silicon substrate (19) is directly bonded to form an ink outlet (14). The first silicon substrate (17) is etched to form a pressure chamber (12), an ink channel (13) and an ink inlet (16), and bonded directly to the glass substrate (18). A piezoelectric thin film (11), having a conductive, elastic body (20), is bonded to the first substrate covering the pressure chamber (12). The elastic body (20) is sandwiched between the piezoelectric thin film (11) and a resin layer (25). The second substrate (19) has a thickness of less than about 0.8 mm in a range of thickness comprising about 1.2 to about 1.9 times (rg-rs), wherein rg is the diameter of the wide end of the through-hole (15) and rs is the diameter of the narrow end of the through-hole (15).