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公开(公告)号：US06326621B1
公开(公告)日：2001-12-04
申请号：US09323730
申请日：1999-06-01
IPC分类号： G01J502
摘要： The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.
摘要翻译： 本发明提供了一种紧凑且高性能的红外辐射探测器。 红外辐射检测器包含：基板; 以及选自热电型红外线辐射检测器单元，电阻辐射热计型红外线检测器单元和铁电测辐射热计型红外线检测器单元的至少两个红外线检测器单元，所述红外线检测器单元设置在同一侧 的基底。
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2.发明授权公开(公告)号：US07024738B2
公开(公告)日：2006-04-11
申请号：US10116096
申请日：2002-04-04
申请人： Satoru Fujii , Isaku Kanno , Ryoichi Takayama , Takeshi Kamada
发明人： Satoru Fujii , Isaku Kanno , Ryoichi Takayama , Takeshi Kamada
CPC分类号： G01P15/0802 , B41J2/14233 , B41J2002/14258 , G01P15/09 , H01L41/094 , H01L41/1132 , Y10T29/42 , Y10T29/49002 , Y10T29/49004 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/49147
摘要： To manufacture a compact and high-performance thin-film piezoelectric bimorph element at low cost, first and second piezoelectric thin films (2, 3) are formed by sputtering on the both surfaces of a metal thin plate (1) which are opposing relation to each other along the thickness thereof, while the respective states of polarizations of the first and second piezoelectric thin films (2, 3) are controlled. A pair of electrode films (5) are formed on the respective surfaces of the first and second piezoelectric thin films (2, 3) opposite to the metal thin plate (1).
摘要翻译： 为了以低成本制造紧凑且高性能的薄膜压电双晶片元件，通过溅射在金属薄板（1）的两个表面上形成第一和第二压电薄膜（2,3），所述两个表面与 彼此沿着其厚度，同时控制第一和第二压电薄膜（2,3）的各自的极化状态。 在与金属薄板（1）相对的第一和第二压电薄膜（2,3）的各个表面上形成一对电极薄膜（5）。
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公开(公告)号：US06347862B1
公开(公告)日：2002-02-19
申请号：US09202419
申请日：1998-12-14
申请人： Isaku Kanno , Satoru Fujii , Ryoichi Takayama , Takeshi Kamada
发明人： Isaku Kanno , Satoru Fujii , Ryoichi Takayama , Takeshi Kamada
IPC分类号： B41J2045
CPC分类号： B41J2/1623 , B41J2/14233 , B41J2/161 , B41J2/1629 , B41J2/1632 , B41J2/1642 , B41J2/1643 , B41J2/1645 , B41J2/1646 , B41J2002/1425 , B41J2002/14258 , B41J2002/14379 , B41J2202/03
摘要： There is provided an ink-jet head having ink outlets formed at a high density for use in an ink-jet recorder. The ink-jet head comprises ink outlets, compression chambers communicating with the ink outlets, and piezoelectric vibration sections, each being provided on a part of each of the compression chambers and including a piezoelectric film containing Pb, Ti and Zr, and electrodes provided on both sides of the piezoelectric film. The piezoelectric film comprises a first layer and a second layer which each have a perovskite structure and are formed in contact with each other, wherein the first layer is formed as a layer containing no Zr or as a layer containing a smaller amount of Zr than that contained in the second layer.
摘要翻译： 提供一种喷墨头，其具有以高密度形成的用于喷墨记录器的墨水出口。 喷墨头包括墨出口，与墨出口连通的压缩室和压电振动部分，每个压电振动部分设置在每个压缩室的一部分上，并且包括含有Pb，Ti和Zr的压电膜，以及设置在 压电薄膜的两面。 压电膜包括第一层和第二层，它们各自具有钙钛矿结构并且彼此接触，其中第一层形成为不含Zr的层或作为含有少量Zr的层， 包含在第二层。
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4.发明授权公开(公告)号：US06263734B1
公开(公告)日：2001-07-24
申请号：US09289936
申请日：1999-04-13
申请人： Satoru Fujii , Isaku Kanno , Takeshi Kamada , Ryoichi Takayama
发明人： Satoru Fujii , Isaku Kanno , Takeshi Kamada , Ryoichi Takayama
IPC分类号： G01P1509
CPC分类号： G01P15/0907 , G01P15/0922 , G01P15/18
摘要： An acceleration sensor 201 comprises a longitudinal effect type detection unit 203 and a lateral effect type detection unit 204. The longitudinal effect type detection unit 203 comprises a longitudinal effect type piezoelectric element 211 comprising a piezoelectric body 211a of a thin film, an electrode 211b and an electrode 211c, which is formed on a deposition substrate 221 serving also as a weight. The lateral effect type detection unit 204 is constituted by providing a lateral effect type piezoelectric element 213 comprising a piezoelectric body 213a of a thin film, an electrode 213b and an electrode 213c, which is formed on the deposition substrate 221 and is cantilevered above a groovy recessed part 105a on a substrate 105. A detection circuit 116 detects an acceleration in a predetermined direction, based on an output of both the longitudinal effect type detection unit 203 and the lateral effect type detection unit 204. Consequently, it is possible to detect an acceleration in a predetermined direction and to make a wider dynamic range and a wider band.
摘要翻译： 加速度传感器201包括纵向效应型检测单元203和横向效果型检测单元204.纵向效应型检测单元203包括纵向效应型压电元件211，其包括薄膜的压电体211a，电极211b和 电极211c，其形成在也用作重量的沉积基板221上。 横向效果型检测单元204通过提供一种横向效应型压电元件213构成，该横向效应型压电元件213包括薄膜压电体213a，电极213b和电极213c，其形成在沉积基板221上并且悬臂上方 检测电路116基于纵向效应型检测单元203和横向效果型检测单元204的输出，检测预定方向的加速度。因此，可以检测到 加速度在一个预定的方向上，并且形成更宽的动态范围和更宽的频带。
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5.发明授权公开(公告)号：US07001014B2
公开(公告)日：2006-02-21
申请号：US10381995
申请日：2001-09-26
申请人： Hideo Torii , Takeshi Kamada , Isaku Kanno , Ryoichi Takayama
发明人： Hideo Torii , Takeshi Kamada , Isaku Kanno , Ryoichi Takayama
IPC分类号： B41J2/45
CPC分类号： C01G25/006 , C01P2002/34 , H01L41/094 , H01L41/1876 , H01L41/316
摘要： A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb1+a(ZrxTi1−x)O3+a(0.2≦a≦0.6 and 0.50≦x≦0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region (24) having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region (25) of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region (24) having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).
摘要翻译： 压电薄膜可实现较大的压电位移。 压电薄膜的化学组成由Pb 1 + a（Zr x 1 Ti 1-x O）O 3+表示， （0.2 <= a <= 0.6和0.50 <= x <= 0.62）。 压电薄膜的晶体结构是具有离子缺陷的钙钛矿柱状晶体区域（24）的混合物，其中一部分氧离子，钛离子和锆离子的构成元素缺失，钙钛矿 没有离子缺陷的化学计量组成的柱状晶体区域（25）。 这种结构允许通过具有离子缺陷的钙钛矿柱状晶体区域（24）使晶体中的残余压缩应力松弛，从而实现大的压电位移（位移量）。
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公开(公告)号：US5868948A
公开(公告)日：1999-02-09
申请号：US724654
申请日：1996-10-01
摘要： A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.
摘要翻译： 公开了一种用于制造包括电容器，热电型红外线检测器等的电介质器件的方法。 该方法包括以下步骤：利用由氢氟酸和氧化剂组成的蚀刻剂来蚀刻形成在基板上的电介质膜以形成预定图案，并且用含有第一处理溶液的蚀刻层处理蚀刻层去除残留物 还原剂，随后用含有酸的第二处理溶液。
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7.发明授权公开(公告)号：US07048360B2
公开(公告)日：2006-05-23
申请号：US10478567
申请日：2003-02-19
CPC分类号： C23C14/088 , B41J2/161 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646 , C01G21/00 , C01G25/006 , C01P2002/34 , C01P2006/40 , C04B35/491 , C04B2235/3213 , C04B2235/3227 , C04B2235/3296 , C04B2235/768 , C04B2235/787 , C04B2235/79 , H01L41/0973 , H01L41/187
摘要： In a piezoelectric element comprising a first electrode 2 provided on a substrate 1, a piezoelectric material 3 provided on the first electrode 2 and a second electrode 4 provided on the piezoelectric material 3, the piezoelectric material 3 is configured so as to have a perovskite type crystal structure which is represented by a formula ABO3 and in which the main component for the A site is Pb and the main components for the B site are Zr, Ti and Pb, and configured so that a ratio of Pb atoms to all atoms in the B site is more than 3% and not more than 30%. Namely, the piezoelectric material 3 is formed so as to contain Pb excessively and the excess Pb atoms are activated to be Pb4+ during formation of the piezoelectric material 3 and then introduced into the B site.
摘要翻译： 在包括设置在基板1上的第一电极2，设置在第一电极2上的压电材料3和设置在压电材料3上的第二电极4的压电元件中，压电材料3被构造成具有钙钛矿型 由式ABO 3 3表示的晶体结构，其中A位的主成分为Pb，B位的主要成分为Zr，Ti，Pb，构成为 的Pb原子对B位点中的所有原子大于3％且不超过30％。 即，压电材料3形成为在形成压电材料3期间过量地含有Pb并且过量的Pb原子被激活为Pb 4+，然后引入B位点。
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公开(公告)号：US6105225A
公开(公告)日：2000-08-22
申请号：US600863
申请日：1996-02-09
申请人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
发明人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
摘要翻译： 公开了一种制造小型，轻型，高精度和廉价的薄膜传感器元件的方法。 薄膜传感器元件包括具有开口部分和粘附在其上的多层膜结构的传感器保持基板。 多层膜结构包括第一电极膜，第二电极膜和存在于第一和第二电极膜之间的压电电介质氧化物膜。 制造薄膜传感器元件的方法包括以下步骤：通过在碱金属卤化物衬底的表面上形成具有（100）面取向的第一电极膜来形成多层膜结构，在其上形成压电电介质氧化物，并形成 压电电介质氧化物上的第二电极膜; 将多层膜结构粘附在具有开口部的传感器保持基板的表面上; 并用水溶解和除去碱金属卤化物基质。
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9.发明授权Temperature sensor element, temperature sensor having the same and method for producing the same temperature sensor element 失效温度传感器元件，温度传感器和相同温度传感器元件的制造方法
公开(公告)号：US6014073A
公开(公告)日：2000-01-11
申请号：US776625
申请日：1997-01-10
申请人： Hideo Torii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii , Ryoichi Takayama , Hiroki Moriwake
发明人： Hideo Torii , Takeshi Kamada , Atsushi Tomozawa , Eiji Fujii , Ryoichi Takayama , Hiroki Moriwake
摘要： A temperature sensor element for measuring the temperature of exhaust gas from car engines comprises a metallic support having a shape of a flat board, a first electric-insulating film existing on the support, a first temperature sensitive film existing on the first electric-insulating film and having a pair of electrodes, and a second electric-insulating film existing on the temperature sensitive film. The element is superior in thermal shock resistance. The element needs no heat-resistant cap. The element is superior in heat-response since the element has a small heat capacity.
摘要翻译： PCT No.PCT / JP96 / 01266 Sec。 371日期1997年1月10日 102（e）日期1997年1月10日PCT提交1996年5月10日PCT公布。 出版物WO96 / 35932 日期：1996年11月14日用于测量汽车发动机废气温度的温度传感器元件包括具有平板形状的金属支撑件，存在于支撑件上的第一电绝缘膜，存在于第一温度敏感膜 第一电绝缘膜并具有一对电极和存在于感温膜上的第二电绝缘膜。 该元件具有优异的耐热冲击性。 该元件不需要耐热帽。 该元件具有优异的热响应性，因为该元件具有较小的热容量。
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公开(公告)号：US5674366A
公开(公告)日：1997-10-07
申请号：US483873
申请日：1995-06-07
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。
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