Infrared radiation detector and method of manufacturing the same
    1.
    发明授权
    Infrared radiation detector and method of manufacturing the same 失效
    红外辐射探测器及其制造方法

    公开(公告)号:US06326621B1

    公开(公告)日:2001-12-04

    申请号:US09323730

    申请日:1999-06-01

    IPC分类号: G01J502

    CPC分类号: G01J5/20 G01J5/34

    摘要: The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.

    摘要翻译: 本发明提供了一种紧凑且高性能的红外辐射探测器。 红外辐射检测器包含:基板; 以及选自热电型红外线辐射检测器单元,电阻辐射热计型红外线检测器单元和铁电测辐射热计型红外线检测器单元的至少两个红外线检测器单元,所述红外线检测器单元设置在同一侧 的基底。

    Ink-jet head
    3.
    发明授权
    Ink-jet head 有权
    喷墨头

    公开(公告)号:US06347862B1

    公开(公告)日:2002-02-19

    申请号:US09202419

    申请日:1998-12-14

    IPC分类号: B41J2045

    摘要: There is provided an ink-jet head having ink outlets formed at a high density for use in an ink-jet recorder. The ink-jet head comprises ink outlets, compression chambers communicating with the ink outlets, and piezoelectric vibration sections, each being provided on a part of each of the compression chambers and including a piezoelectric film containing Pb, Ti and Zr, and electrodes provided on both sides of the piezoelectric film. The piezoelectric film comprises a first layer and a second layer which each have a perovskite structure and are formed in contact with each other, wherein the first layer is formed as a layer containing no Zr or as a layer containing a smaller amount of Zr than that contained in the second layer.

    摘要翻译: 提供一种喷墨头,其具有以高密度形成的用于喷墨记录器的墨水出口。 喷墨头包括墨出口,与墨出口连通的压缩室和压电振动部分,每个压电振动部分设置在每个压缩室的一部分上,并且包括含有Pb,Ti和Zr的压电膜,以及设置在 压电薄膜的两面。 压电膜包括第一层和第二层,它们各自具有钙钛矿结构并且彼此接触,其中第一层形成为不含Zr的层或作为含有少量Zr的层, 包含在第二层。

    Piezoelectric acceleration sensor and method of detecting acceleration and manufacturing method thereof
    4.
    发明授权
    Piezoelectric acceleration sensor and method of detecting acceleration and manufacturing method thereof 失效
    压电加速度传感器及其加速度检测方法

    公开(公告)号:US06263734B1

    公开(公告)日:2001-07-24

    申请号:US09289936

    申请日:1999-04-13

    IPC分类号: G01P1509

    摘要: An acceleration sensor 201 comprises a longitudinal effect type detection unit 203 and a lateral effect type detection unit 204. The longitudinal effect type detection unit 203 comprises a longitudinal effect type piezoelectric element 211 comprising a piezoelectric body 211a of a thin film, an electrode 211b and an electrode 211c, which is formed on a deposition substrate 221 serving also as a weight. The lateral effect type detection unit 204 is constituted by providing a lateral effect type piezoelectric element 213 comprising a piezoelectric body 213a of a thin film, an electrode 213b and an electrode 213c, which is formed on the deposition substrate 221 and is cantilevered above a groovy recessed part 105a on a substrate 105. A detection circuit 116 detects an acceleration in a predetermined direction, based on an output of both the longitudinal effect type detection unit 203 and the lateral effect type detection unit 204. Consequently, it is possible to detect an acceleration in a predetermined direction and to make a wider dynamic range and a wider band.

    摘要翻译: 加速度传感器201包括纵向效应型检测单元203和横向效果型检测单元204.纵向效应型检测单元203包括纵向效应型压电元件211,其包括薄膜的压电体211a,电极211b和 电极211c,其形成在也用作重量的沉积基板221上。 横向效果型检测单元204通过提供一种横向效应型压电元件213构成,该横向效应型压电元件213包括薄膜压电体213a,电极213b和电极213c,其形成在沉积基板221上并且悬臂上方 检测电路116基于纵向效应型检测单元203和横向效果型检测单元204的输出,检测预定方向的加速度。因此,可以检测到 加速度在一个预定的方向上,并且形成更宽的动态范围和更宽的频带。

    Piezoelectric thin film element, ink jet recording head using such a piezoelectric thin film element, and their manufacture methods
    5.
    发明授权
    Piezoelectric thin film element, ink jet recording head using such a piezoelectric thin film element, and their manufacture methods 有权
    压电薄膜元件,使用这种压电薄膜元件的喷墨记录头及其制造方法

    公开(公告)号:US06688731B1

    公开(公告)日:2004-02-10

    申请号:US09701856

    申请日:2000-12-01

    IPC分类号: B41J2045

    摘要: A piezoelectric thin film element D, in which a piezoelectric thin film 1 with first and second electrode films 2 and 3 respectively formed on its opposite surfaces in the thickness direction is held by a hold film 5, is fabricated by forming each film 1, 2, 3, and 5 on a film formation substrate 11 and removing the film formation substrate 11 by etching. Even when the hold film 5 is made of material such as resin and therefore exhibits relatively poor adhesion with respect to the other films, the piezoelectric thin film 1 is protected from damage by etchant because the first electrode film 2 which comes into contact with the film formation substrate 11 is formed such that the overall circumference of a peripheral edge portion of the first electrode film 2 laterally extends beyond the lateral surface of the piezoelectric thin film 1 and closely adheres to the hold film 5.

    摘要翻译: 通过形成每个膜1,2制造压电薄膜元件D,其中分别在其厚度方向的相对表面上形成有第一和第二电极膜2和3的压电薄膜1由保持膜5保持 ,3和5在成膜基板11上,并通过蚀刻去除成膜基板11。 即使当保持膜5由诸如树脂的材料制成并且因此相对于其它膜显示相对较差的粘合力时,由于与膜接触的第一电极膜2,保护了压电薄膜1免受腐蚀剂损伤 形成基板11形成为使得第一电极膜2的周边部分的整个周边横向延伸超过压电薄膜1的侧表面并且紧密地附着到保持膜5。

    Method for fabricating dielectric device
    6.
    发明授权
    Method for fabricating dielectric device 失效
    电介质器件制造方法

    公开(公告)号:US5868948A

    公开(公告)日:1999-02-09

    申请号:US724654

    申请日:1996-10-01

    IPC分类号: H01G4/12 H01L37/02 B44C1/22

    CPC分类号: H01G4/12 H01L37/02

    摘要: A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.

    摘要翻译: 公开了一种用于制造包括电容器,热电型红外线检测器等的电介质器件的方法。 该方法包括以下步骤:利用由氢氟酸和氧化剂组成的蚀刻剂来蚀刻形成在基板上的电介质膜以形成预定图案,并且用含有第一处理溶液的蚀刻层处理蚀刻层去除残留物 还原剂,随后用含有酸的第二处理溶液。

    Ferroelectric thin film and method of manufacturing the same
    8.
    发明授权
    Ferroelectric thin film and method of manufacturing the same 失效
    铁电薄膜及其制造方法

    公开(公告)号:US5717157A

    公开(公告)日:1998-02-10

    申请号:US351216

    申请日:1994-11-30

    摘要: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, �(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.multidot.MgO!, where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.

    摘要翻译: 铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素,并且选自Mg和Mn。 铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。 铁电薄膜通过以下步骤制造:通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上,排出室,通过基板加热器加热基板,使 在通过喷嘴将气体Ar和O2溅射到室中,并保持高度的真空度。 然后,将高频电力从高频电源输入到目标物,产生等离子体,在基板上形成膜。 以这种方式,可以制造含有例如[(1-x)xPb1-yLayTi1-y / 4O3 + xxMgO]的铁电薄膜,其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。

    Thin film capacitor and method of manufacturing the same
    9.
    发明授权
    Thin film capacitor and method of manufacturing the same 失效
    薄膜电容器及其制造方法

    公开(公告)号:US5406445A

    公开(公告)日:1995-04-11

    申请号:US216966

    申请日:1994-03-24

    IPC分类号: H01G4/20 H01L29/04 H01L23/48

    摘要: A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

    摘要翻译: 将取向为(100)面的NaCl氧化物薄层或取向为(100)面的尖晶石氧化物薄层,朝向(100)面的钙钛矿电介质薄层和金属电极依次层压在金属电极上,从而提供 薄膜电容器。 或者,通过依次层叠取向于(100)面的氧化锌薄膜或取向为(100)面的尖晶石氧化物薄层,将铂薄层作为朝向(100)面的下部电极而制造薄膜电容器 取向为(100)面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。 当采用真空沉积法,溅射法,CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层,尖晶石氧化物薄层和钙钛矿电介质薄层 形成金属电极。