公开(公告)号：US6105225A

公开(公告)日：2000-08-22

申请号：US600863

申请日：1996-02-09

申请人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

发明人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

IPC分类号： G01P15/08 ,  G01P15/09 ,  H01L41/29 ,  H01L41/22

CPC分类号： G01P15/0922 ,  G01P15/0802 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/313 ,  Y10T29/42 ,  Y10T29/4981

摘要： A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.

摘要翻译： 公开了一种制造小型，轻型，高精度和廉价的薄膜传感器元件的方法。 薄膜传感器元件包括具有开口部分和粘附在其上的多层膜结构的传感器保持基板。 多层膜结构包括第一电极膜，第二电极膜和存在于第一和第二电极膜之间的压电电介质氧化物膜。 制造薄膜传感器元件的方法包括以下步骤：通过在碱金属卤化物衬底的表面上形成具有（100）面取向的第一电极膜来形成多层膜结构，在其上形成压电电介质氧化物，并形成 压电电介质氧化物上的第二电极膜; 将多层膜结构粘附在具有开口部的传感器保持基板的表面上; 并用水溶解和除去碱金属卤化物基质。

公开(公告)号：US5612536A

公开(公告)日：1997-03-18

申请号：US374989

申请日：1995-01-19

申请人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

发明人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

IPC分类号： G01P15/08 ,  G01P15/09 ,  H01L41/29 ,  G01J5/10

CPC分类号： G01P15/0922 ,  G01P15/0802 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/313 ,  Y10T29/42 ,  Y10T29/4981

摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.

摘要翻译： 薄膜传感器元件包括：具有开口部的传感器保持基板和附着在其上的多层膜，至少由电极膜A，具有（100）面取向的电极膜B和存在于电极之间的压电电介质氧化膜 膜A和电极膜B.结果，可以获得可用于加速度传感器元件和热电型红外线传感器元件的小，轻，高精度和便宜的薄膜传感器元件。 在平板KBr基板的表面上，通过等离子体MOCVD方法形成导电NiO的岩盐晶体结构氧化物，其垂直方向相对于衬底表面<100>晶体取向。 通过溅射法，在该表面上通过外延生长形成PZT膜，在其上形成Ni-Cr电极膜。 接下来，将多层膜结构反转并粘接到具有开口部的粘合剂的传感器基板。 连接电极连接后，整个结构用水清洗，从而除去KBr基板。

公开(公告)号：US5674366A

公开(公告)日：1997-10-07

申请号：US483873

申请日：1995-06-07

申请人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  G02F1/00 ,  H01L21/314 ,  H01L21/316 ,  H01L37/02 ,  H01L41/316 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/0078 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/314 ,  H01L21/31691 ,  H01L37/025 ,  H01L41/1875 ,  H01L41/316 ,  G02F1/0027

摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

公开(公告)号：US5672252A

公开(公告)日：1997-09-30

申请号：US483835

申请日：1995-06-15

申请人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  G02F1/00 ,  H01L21/314 ,  H01L21/316 ,  H01L37/02 ,  H01L41/316 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/0078 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/314 ,  H01L21/31691 ,  H01L37/025 ,  H01L41/1875 ,  H01L41/316 ,  G02F1/0027

摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

公开(公告)号：US5663089A

公开(公告)日：1997-09-02

申请号：US465350

申请日：1995-06-05

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

IPC分类号： H01G4/30 ,  H01L21/70

CPC分类号： H01G4/306

摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

公开(公告)号：US5521454A

公开(公告)日：1996-05-28

申请号：US302011

申请日：1994-09-09

申请人： Masumi Hattori ,  Hideo Torii ,  Masaki Aoki ,  Eiji Fujii ,  Atsushi Tomozawa ,  Ryoichi Takayama ,  Ken Kamata ,  Yasuhiko Horio

发明人： Masumi Hattori ,  Hideo Torii ,  Masaki Aoki ,  Eiji Fujii ,  Atsushi Tomozawa ,  Ryoichi Takayama ,  Ken Kamata ,  Yasuhiko Horio

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/00

CPC分类号： H03H3/08 ,  H03H9/02574

摘要： A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.

摘要翻译： 表面波滤波器元件包括弹性表面波在其上传播的部分。 该部分包括用于输入和输出信号的压电材料，非晶硼层或板和IDT电极。 压电材料是通过溅射，离子束沉积或化学气相沉积形成的由ZnO，LiNbO 3或LiTaO 3制成的膜。 无定形硼层或硼板可以形成在由无机材料制成的基板上。 硼材料使用电子束沉积，离子束沉积或化学气相沉积形成。

公开(公告)号：US5459635A

公开(公告)日：1995-10-17

申请号：US215816

申请日：1994-03-22

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Masumi Hattori ,  Satoru Fujii ,  Ryoichi Takayama

IPC分类号： H01G4/30 ,  H01G4/10

CPC分类号： H01G4/306

摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

摘要翻译： 一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

公开(公告)号：US5406445A

公开(公告)日：1995-04-11

申请号：US216966

申请日：1994-03-24

申请人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

发明人： Eiji Fujii ,  Atsushi Tomozawa ,  Hideo Torii ,  Masumi Hattori ,  Ryoichi Takayama ,  Satoru Fujii

IPC分类号： H01G4/20 ,  H01L29/04 ,  H01L23/48

CPC分类号： H01G4/20 ,  H01L2224/4918 ,  H01L2924/181

摘要： A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

摘要翻译： 将取向为（100）面的NaCl氧化物薄层或取向为（100）面的尖晶石氧化物薄层，朝向（100）面的钙钛矿电介质薄层和金属电极依次层压在金属电极上，从而提供 薄膜电容器。 或者，通过依次层叠取向于（100）面的氧化锌薄膜或取向为（100）面的尖晶石氧化物薄层，将铂薄层作为朝向（100）面的下部电极而制造薄膜电容器 取向为（100）面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。 当采用真空沉积法，溅射法，CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层，尖晶石氧化物薄层和钙钛矿电介质薄层 形成金属电极。

公开(公告)号：US07001014B2

公开(公告)日：2006-02-21

申请号：US10381995

申请日：2001-09-26

申请人： Hideo Torii ,  Takeshi Kamada ,  Isaku Kanno ,  Ryoichi Takayama

发明人： Hideo Torii ,  Takeshi Kamada ,  Isaku Kanno ,  Ryoichi Takayama

IPC分类号： B41J2/45

CPC分类号： C01G25/006 ,  C01P2002/34 ,  H01L41/094 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb1+a(ZrxTi1−x)O3+a(0.2≦a≦0.6 and 0.50≦x≦0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region (24) having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region (25) of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region (24) having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).

摘要翻译： 压电薄膜可实现较大的压电位移。 压电薄膜的化学组成由Pb 1 + a（Zr x 1 Ti 1-x O）O 3+表示， （0.2 <= a <= 0.6和0.50 <= x <= 0.62）。 压电薄膜的晶体结构是具有离子缺陷的钙钛矿柱状晶体区域（24）的混合物，其中一部分氧离子，钛离子和锆离子的构成元素缺失，钙钛矿 没有离子缺陷的化学计量组成的柱状晶体区域（25）。 这种结构允许通过具有离子缺陷的钙钛矿柱状晶体区域（24）使晶体中的残余压缩应力松弛，从而实现大的压电位移（位移量）。

公开(公告)号：US6014073A

公开(公告)日：2000-01-11

申请号：US776625

申请日：1997-01-10

申请人： Hideo Torii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii ,  Ryoichi Takayama ,  Hiroki Moriwake

发明人： Hideo Torii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii ,  Ryoichi Takayama ,  Hiroki Moriwake

IPC分类号： G01K7/22 ,  H01C7/02 ,  H01C7/10

CPC分类号： G01K7/22 ,  G01K7/223 ,  H01C7/023

摘要： A temperature sensor element for measuring the temperature of exhaust gas from car engines comprises a metallic support having a shape of a flat board, a first electric-insulating film existing on the support, a first temperature sensitive film existing on the first electric-insulating film and having a pair of electrodes, and a second electric-insulating film existing on the temperature sensitive film. The element is superior in thermal shock resistance. The element needs no heat-resistant cap. The element is superior in heat-response since the element has a small heat capacity.

摘要翻译： PCT No.PCT / JP96 / 01266 Sec。 371日期1997年1月10日 102（e）日期1997年1月10日PCT提交1996年5月10日PCT公布。 出版物WO96 / 35932 日期：1996年11月14日用于测量汽车发动机废气温度的温度传感器元件包括具有平板形状的金属支撑件，存在于支撑件上的第一电绝缘膜，存在于第一温度敏感膜 第一电绝缘膜并具有一对电极和存在于感温膜上的第二电绝缘膜。 该元件具有优异的耐热冲击性。 该元件不需要耐热帽。 该元件具有优异的热响应性，因为该元件具有较小的热容量。