公开(公告)号：US07977243B2

公开(公告)日：2011-07-12

申请号：US12693589

申请日：2010-01-26

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H01L21/311

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2气体等离子体。 用Cl 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US20070117363A1

公开(公告)日：2007-05-24

申请号：US11638522

申请日：2006-12-14

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H01L21/3205 ,  C23C16/00 ,  H01L21/4763

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

公开(公告)号：US20070087577A1

公开(公告)日：2007-04-19

申请号：US11638511

申请日：2006-12-14

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/31

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2/2气体等离子体。 用Cl 2 H 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US20060054593A1

公开(公告)日：2006-03-16

申请号：US11252811

申请日：2005-10-19

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： B44C1/22 ,  H01L21/311

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2/2气体等离子体。 用Cl 2 H 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US20100124825A1

公开(公告)日：2010-05-20

申请号：US12693589

申请日：2010-01-26

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H01L21/285

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2气体等离子体。 用Cl 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US07659209B2

公开(公告)日：2010-02-09

申请号：US11798883

申请日：2007-05-17

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H01L21/00

CPC分类号： H01L21/32051 ,  C23C16/34 ,  C23C16/452 ,  C23C16/50 ,  H01L21/28556 ,  H01L21/76843

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2气体等离子体。 用Cl 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜之后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US20070272655A1

公开(公告)日：2007-11-29

申请号：US11798883

申请日：2007-05-17

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： B44C1/22 ,  H01L21/311

CPC分类号： H01L21/32051 ,  C23C16/34 ,  C23C16/452 ,  C23C16/50 ,  H01L21/28556 ,  H01L21/76843

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

摘要翻译： 在衬底和金属构件之间的室内的位置处产生Cl 2/2气体等离子体。 用Cl 2 H 2气体等离子体蚀刻金属构件以形成前体。 以与容纳基板的室隔离的方式激发氮气。 在被激发的氮和前体之间反应时形成金属氮化物，并在基板上形成膜。 在金属氮化物成膜后，在基板上的金属氮化物上形成前体的金属成分作为膜。 以这种方式，以高速度产生具有优异的埋藏性能和非常小的厚度的阻挡金属膜，其中金属的扩散被抑制并且对金属的粘附性得到改善。

公开(公告)号：US20100047471A1

公开(公告)日：2010-02-25

申请号：US12606659

申请日：2009-10-27

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： C23C16/448 ,  C23C16/34

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

公开(公告)号：US20070141274A1

公开(公告)日：2007-06-21

申请号：US11638510

申请日：2006-12-14

申请人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

发明人： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC分类号： H05H1/24 ,  H01L21/20 ,  C23C16/00 ,  H01L21/31

CPC分类号： H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

摘要： A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

公开(公告)号：US20060110535A1

公开(公告)日：2006-05-25

申请号：US11319458

申请日：2005-12-29

申请人： Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

发明人： Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01J37/321 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/455 ,  H01J2237/2001

摘要： A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

摘要翻译： 源气体通过喷嘴供应到室中，并且电磁波从等离子体天线投入到室中。 所得到的Cl 2气体等离子体相对于等离子体天线中的电流的流动方向，以不连续状态布置在基板和天花板部件之间的多个铜突起进行蚀刻反应， 以形成前体（Cu x Si Cl y y）。 通过被控制到比被蚀刻部件的温度更低的温度的衬底输送的前体（Cu x Cl Cl y y y）通过还原反应被转换为仅仅Cu离子，并且 指向基板以在基板的表面上形成薄的Cu膜。 成膜速度快，成本明显降低，生成的薄铜膜质量好。