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1.发明授权
公开(公告)号：US5354732A
公开(公告)日：1994-10-11
申请号：US997187
申请日：1992-12-28
申请人： Hitoshi Tabata , Osamu Murata , Junzo Fujioka , Shunichi Minakata , Tomoji Kawai , Shichio Kawai
发明人： Hitoshi Tabata , Osamu Murata , Junzo Fujioka , Shunichi Minakata , Tomoji Kawai , Shichio Kawai
CPC分类号： H01L37/02 , G01J5/34 , Y10S505/701
摘要： An electrode in an electronic device using a functional thin film facilitates epitaxial growth during the functional material film-forming process and prevents the generation of cracks due to thermal stress. An oxide superconductor is using as an electrode material, thereby forming the crystal structure identical with the crystal structure of a functional thin film, and rendering their lattice constant and coefficient of thermal expansion close to the lattice constant and coefficient of thermal expansion functional thin film. According to the electrode material, high electric conductivity, low thermal conductivity and large thermal absorption coefficient characteristics can also be obtained.
摘要翻译： 使用功能性薄膜的电子装置中的电极在功能性材料成膜过程中促进外延生长，并且防止由于热应力而产生裂纹。 使用氧化物超导体作为电极材料，由此形成与功能性薄膜的晶体结构相同的晶体结构，使其晶格常数和热膨胀系数接近晶格常数和热膨胀功能薄膜的系数。 根据电极材料，也可以获得高导电性，低导热性和大的热吸收系数特性。
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公开(公告)号：US5532504A
公开(公告)日：1996-07-02
申请号：US353293
申请日：1994-12-05
申请人： Hitoshi Tabata , Osamu Murata , Junzo Fujioka , Shunichi Minakata
发明人： Hitoshi Tabata , Osamu Murata , Junzo Fujioka , Shunichi Minakata
CPC分类号： H01L37/02 , C23C14/088 , C23C14/22 , C23C14/28 , G01J5/34
摘要： There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.
摘要翻译： 提供了一种通过将复合氧化物气相沉积到基底上来生产高熔点金属和低熔点金属的复合氧化物的电介质薄膜的方法，其中改进包括将激光束照射到基底上或 在气相沉积期间与气相反应。 还提供了一种热电型传感器，其包括：包括漏电极，源电极，栅电极和Si半导体的MOS元件和形成在漏电极上的铁电或热电材料的膜，漏电极被制成 的材料与Si或SiO 2呈现良好的欧姆接触，其晶格常数接近于铁电或热电材料。
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3.发明授权
公开(公告)号：US5395663A
公开(公告)日：1995-03-07
申请号：US51817
申请日：1993-04-26
申请人： Hitoshi Tabata , Osamu Murata , Junzo Fujioka , Shunichi Minakata , Shichio Kawai , Tomoji Kawai
发明人： Hitoshi Tabata , Osamu Murata , Junzo Fujioka , Shunichi Minakata , Shichio Kawai , Tomoji Kawai
CPC分类号： H01L37/02 , C23C14/088 , C23C14/22 , C23C14/28 , G01J5/34
摘要： There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.
摘要翻译： 提供了一种通过气相沉积工艺在基板上制造钙钛矿氧化物的电介质薄膜的方法，该方法包括使氧化物气化并用激光束照射氧化物蒸汽或基板。 还提供了一种热电型传感器，其包括：包括漏电极，源电极，栅电极和Si半导体的MOS元件和形成在漏电极上的铁电或热电材料的膜，漏电极被制成 的材料与Si或SiO 2呈现良好的欧姆接触，其晶格常数接近于铁电或热电材料。
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4.发明授权Production of oxide superconducting films by laser sputtering using N.sub.2 .sub.2 失效使用N2O或NO2通过激光溅射生产氧化物超导膜
公开(公告)号：US5236895A
公开(公告)日：1993-08-17
申请号：US735175
申请日：1991-07-23
申请人： Yukio Nishiyama , Shichio Kawai , Tomoji Kawai , Hitoshi Tabata , Osamu Murata , Junzo Fujioka
发明人： Yukio Nishiyama , Shichio Kawai , Tomoji Kawai , Hitoshi Tabata , Osamu Murata , Junzo Fujioka
CPC分类号： C23C14/087 , C23C14/0021 , H01L39/2448 , Y10S505/73 , Y10S505/732
摘要： There is provided in a process for depositing a metal oxide superconducting film on a substrate by laser sputtering, the improvement which comprises carrying out the deposition of the metal oxide superconducting film in the presence of a gas having higher oxidation potential than oxygen.
摘要翻译： 在通过激光溅射在基板上沉积金属氧化物超导膜的方法中提供了改进，其包括在具有比氧更高的氧化电势的气体的存在下进行金属氧化物超导膜的沉积。
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5.发明申请Method for immobilizing self-organizing material or fine particle on substrate, and substrate manufactured by using such method 有权将自组织材料或细颗粒固定在基材上的方法，以及使用这种方法制造的基材公开(公告)号：US20080020214A1
公开(公告)日：2008-01-24
申请号：US11819222
申请日：2007-06-26
CPC分类号： B01J19/0046 , B01J2219/00648 , B01J2219/00659 , B01J2219/00722 , B01J2219/00725 , B82Y30/00 , Y10T428/31678
摘要： A method for immobilizing a self-organizing material or fine particles on a substrate, and a substrate whereupon the self-organizing material or the fine particles are immobilized. More specifically, the method for immobilizing the fine particles including a nucleic acid (for instance, DNA or RNA) or a metal oxide on the substrate, and the substrate whereupon the nucleic acid (for example, DNA or RNA) or the metal oxide is immobilized.
摘要翻译： 将自组织材料或细颗粒固定在基材上的方法，以及固定有自组织材料或微粒的基材。 更具体地说，将含有核酸（例如DNA或RNA）或金属氧化物的微粒子固定在基板上的基板，以及核酸（例如DNA或RNA）或金属氧化物等的底物为 固定化
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6.发明授权公开(公告)号：US07195531B2
公开(公告)日：2007-03-27
申请号：US11436518
申请日：2006-05-19
申请人： Takeo Ito , Tsuyoshi Oyaizu , Takashi Nishimura , Satoshi Koide , Hitoshi Tabata
发明人： Takeo Ito , Tsuyoshi Oyaizu , Takashi Nishimura , Satoshi Koide , Hitoshi Tabata
CPC分类号： H01J9/20 , H01J29/085 , H01J29/28 , H01J29/94
摘要： An image display unit having a structure in which a heat-resisting fine particle layer is formed on a metal back layer disposed on a phosphor layer, and a getter layer is deposited/formed on the heat-resisting fine particle layer by vapor-depositing. The fine particle layer is desirably formed in a specified pattern, and a filmy getter layer is formed in a pattern complementary to the former pattern. The average particle size of heat-resisting fine particles which may use SiO2, TiO2, Al2O3, Fe2O3 is 5 nm to 30 μm. Since abnormal discharging is restricted, the destruction and deterioration of an electron emitting element and a phosphor screen are prevented to provide a high-brightness, high-grade display.
摘要翻译： 具有在设置在荧光体层上的金属背层上形成耐热性微粒层的结构的图像显示单元，通过气相沉积形成耐热性微粒层的吸气剂层。 细颗粒层希望以特定的图案形成，并且以与前一图案互补的图案形成薄膜吸气剂层。 可以使用SiO 2，TiO 2，Al 2 O 3，N 3，N 2 O 3的耐热细颗粒的平均粒径 >，Fe 2 O 3 O 3为5nm〜30μm。 由于异常放电受到限制，因此防止了电子发射元件和荧光屏的破坏和劣化，从而提供高亮度，高等级的显示。
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公开(公告)号：US06488908B1
公开(公告)日：2002-12-03
申请号：US09652011
申请日：2000-08-31
申请人： Tomoji Kawai , Hitoshi Tabata , Yuji Muraoka
发明人： Tomoji Kawai , Hitoshi Tabata , Yuji Muraoka
IPC分类号： C01G4900
CPC分类号： H01F41/205 , C23C14/08 , C30B23/002 , C30B23/02 , C30B29/26 , G11B7/00
摘要： A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.
摘要翻译： 将基板和靶设置在真空室内，真空室内的氧分压设定为1×10 -5以下。 在这种条件下，选自由式AE1 + tFe2-2tTMtO4表示的化合物组成的组的尖晶石铁氧体薄膜，其中AE表示碱土金属或碱金属，TM表示过渡金属，t落在 在0.2和0.6之间，通过激光束沉积在衬底上沉积由式Zn1-xCoxFe2O4表示的化合物，其中x落在0.2和0.7之间的范围内。 具体的方法使得可以提供在大约或高于室温的温度下实现旋转玻璃态的尖晶石铁氧体薄膜，并且能够通过光控制自旋状态。
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公开(公告)号：US20070241658A1
公开(公告)日：2007-10-18
申请号：US10590324
申请日：2005-02-15
申请人： Tsuyoshi Oyaizu , Hitoshi Tabata , Isamu Tsuchiya , Takeo Ito
发明人： Tsuyoshi Oyaizu , Hitoshi Tabata , Isamu Tsuchiya , Takeo Ito
CPC分类号： H01J29/28 , H01J29/94 , H01J31/127 , H01J2329/28 , H01J2329/323 , H01J2329/946
摘要： An image display device includes a face plate in which a metal back layer is formed on a phosphor screen and a rear plate having a number of electron emitting elements, and an electrically divided portion is formed at the metal back layer in a predetermined pattern. In this electrically divided portion, a covering layer including a component melting or oxidizing a metal (Al) and heat resistant fine particles such as silica fine particles respectively, and having concaves and convexes resulting from the heat resistant fine particles on a surface thereof is formed. Besides, a getter layer divided by the covering layer is formed on the metal back layer in a film shape. It is desirable that in the light absorption layer, a portion at least positioning at a lower layer of the divided portion of the metal back layer has a surface resistance of 1×105Ω/□ to 1×1012Ω/□.
摘要翻译： 图像显示装置包括在荧光屏上形成金属背层的面板和具有多个电子发射元件的后板，并且在金属背层以预定图案形成电分割部分。 在该电分割部分中，形成包括熔融或氧化金属（Al）的组分和分别具有二氧化硅微粒的耐热细颗粒并且在其表面上由耐热细颗粒形成的凹凸的覆盖层 。 此外，在金属背层上形成由覆盖层分隔的吸气剂层，形成膜状。 期望在光吸收层中，至少定位在金属背层的分割部分的下层的部分的表面电阻为1×10 5Ω/□至1×10 6 12欧米加/□。
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公开(公告)号：US20070063634A1
公开(公告)日：2007-03-22
申请号：US10556127
申请日：2004-04-30
申请人： Tsuyoshi Oyaizu , Hitoshi Tabata , Isamu Tsuchiya , Takeo Ito
发明人： Tsuyoshi Oyaizu , Hitoshi Tabata , Isamu Tsuchiya , Takeo Ito
CPC分类号： H01J29/28 , H01J29/327 , H01J29/94 , H01J31/123 , H01J2329/28 , H01J2329/323 , H01J2329/946
摘要： This image display unit includes a face plate (6) on an inner surface of which a phosphor screen is formed, and a rear plate having a large number of electron emission elements, wherein the phosphor screen includes a light absorption layer (8), a phosphor layer (9), a metal back layer (10) having a separating portion (10a) and formed on the phosphor layer, a high-resistance covering layer (11) formed on the separating portion of the metal back layer in such a way as to be laid across the metal back layer of both sides of the separating portion, a heat-resistant fine particle layer (12) formed on the high-resistance covering layer, and a getter layer (13) formed in a film shape above the metal back layer and divided by the heat-resistant fine particle layer. In an image display unit such as an FED, a heat-resistance property is enhanced to prevent destruction or deterioration of the light emission element or the phosphor screen due to an abnormal discharge, so that display of high luminance and high quality can be realized.
摘要翻译： 该图像显示单元包括在其内表面上形成荧光屏的面板（6）和具有大量电子发射元件的后板，其中荧光屏包括光吸收层（8）， 荧光体层（9），具有分离部分（10a）并形成在荧光体层上的金属背层（10），形成在金属背层的分离部分上的高电阻覆盖层（11） 在隔离部分的两侧的金属背层上铺设的方法，形成在高电阻覆盖层上的耐热细粒层（12）和形成在上面的膜形式的吸气剂层（13） 金属背层并由耐热细粒层分割。 在诸如FED的图像显示单元中，提高耐热性能以防止由于异常放电引起的发光元件或荧光屏的破坏或劣化，从而可以实现高亮度和高质量的显示。
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公开(公告)号：US07075220B2
公开(公告)日：2006-07-11
申请号：US10487625
申请日：2002-08-23
申请人： Takeo Ito , Tsuyoshi Oyaizu , Takashi Nishimura , Satoshi Koide , Hitoshi Tabata
发明人： Takeo Ito , Tsuyoshi Oyaizu , Takashi Nishimura , Satoshi Koide , Hitoshi Tabata
CPC分类号： H01J9/20 , H01J29/085 , H01J29/28 , H01J29/94
摘要： An image display unit having a structure in which a heat-resisting fine particle layer is formed on a metal back layer disposed on a phosphor layer, and a getter layer is deposited/formed on the heat-resisting fine particle layer by vapor-depositing. The fine particle layer is desirably formed in a specified pattern, and a filmy getter layer is formed in a pattern complementary to the former pattern. The average particle size of heat-resisting fine particles which may use SiO2, TiO2, Al2O3, Fe2O3 is 5 nm to 30 μm. Since abnormal discharging is restricted, the destruction and deterioration of an electron emitting element and a phosphor screen are prevented to provide a high-brightness, high-grade display.
摘要翻译： 具有在设置在荧光体层上的金属背层上形成耐热性微粒层的结构的图像显示单元，通过气相沉积形成耐热性微粒层的吸气剂层。 细颗粒层希望以特定的图案形成，并且以与前一图案互补的图案形成薄膜吸气剂层。 可以使用SiO 2，TiO 2，Al 2 O 3，N 3，N 2 O 3的耐热细颗粒的平均粒径 >，Fe 2 O 3 O 3为5nm〜30μm。 由于异常放电受到限制，因此防止了电子发射元件和荧光屏的破坏和劣化，从而提供高亮度，高等级的显示。
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