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    Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
    1.
    发明授权
    Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom 有权
    用于稳定的，敏感的光电检测器和由其制成的图像传感器的材料，制造设备和方法

    公开(公告)号：US08785908B2

    公开(公告)日：2014-07-22

    申请号：US13473020

    申请日：2012-05-16

    申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    IPC分类号： H01L29/06

    CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

    摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

    摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

    Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
    2.
    发明授权
    Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom 有权
    用于稳定的，敏感的光电检测器和由其制成的图像传感器的材料，制造设备和方法

    公开(公告)号：US08203195B2

    公开(公告)日：2012-06-19

    申请号：US12506233

    申请日：2009-07-20

    申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    IPC分类号： H01L31/0232

    CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

    摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

    摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

    Materials, Fabrication Equipment, and Methods for Stable, Sensitive Photodetectors and Image Sensors Made Therefrom
    3.
    发明申请
    Materials, Fabrication Equipment, and Methods for Stable, Sensitive Photodetectors and Image Sensors Made Therefrom 有权
    材料，制造设备和稳定的敏感光电检测器和图像传感器的方法

    公开(公告)号：US20100019335A1

    公开(公告)日：2010-01-28

    申请号：US12506236

    申请日：2009-07-20

    申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    IPC分类号： H01L31/101

    CPC分类号： H01L31/03529 ,  H01L27/14603 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109 ,  Y02E10/50

    摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

    摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括n型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

    MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM
    5.
    发明申请
    MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM 有权
    材料，制造设备和方法，用于稳定，敏感的光电转换器和图像传感器

    公开(公告)号：US20120280226A1

    公开(公告)日：2012-11-08

    申请号：US13473020

    申请日：2012-05-16

    申请人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    发明人： Igor Constantin Ivanov ,  Edward Hartley Sargent ,  Hui Tian

    IPC分类号： H01L31/0264 ,  H01L31/0232 ,  B82Y99/00

    CPC分类号： H01L31/101 ,  H01L27/14603 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/0336 ,  H01L31/035218 ,  H01L31/03845 ,  H01L31/09 ,  H01L31/109 ,  Y02E10/50

    摘要： Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.

    摘要翻译： 光敏设备包括包括第一接触和第二接触的设备，每个具有功函数，以及在第一接触件和第二接触件之间的光敏材料。 光敏材料包括p型半导体，并且光敏材料具有功函数。 电路在第一触点和第二触点之间施加偏置电压。 当在第一接触和第二接触之间施加偏压时，光敏材料具有大于从第一接触到第二接触的电子传播时间的电子寿命。 第一次接触提供电子注入并阻止孔的提取。 第一接触和光敏材料之间的界面提供了小于1cm / s的表面复合速度。

    Image sensors employing sensitized semiconductor diodes
    6.
    发明授权
    Image sensors employing sensitized semiconductor diodes 有权
    使用敏化半导体二极管的图像传感器

    公开(公告)号：US08822897B2

    公开(公告)日：2014-09-02

    申请号：US13051320

    申请日：2011-03-18

    申请人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    发明人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    IPC分类号： H01L27/148 ,  H01L31/0232 ,  H01L27/146 ,  H04N9/04

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H04N9/045

    摘要： In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.

    摘要翻译： 在各种示例性实施例中，本发明主题是图像传感器和形成图像传感器的方法。 在一个实施例中，图像传感器包括半导体衬底和多个像素区域。 每个像素区域包括在基底上的光敏材料，光敏材料定位成接收光。 每个像素区域的像素电路也包括在传感器中。 每个像素电路包括形成在半导体衬底上的电荷存储器和读出电路。 非金属接触区域位于电荷存储器和相应像素区域的光敏材料之间，电荷存储器通过非金属接触区域与相应像素区域的光敏材料电连通。

    DEVICES AND METHODS FOR HIGH-RESOLUTION IMAGE AND VIDEO CAPTURE
    7.
    发明申请
    DEVICES AND METHODS FOR HIGH-RESOLUTION IMAGE AND VIDEO CAPTURE 审中-公开
    高分辨率图像和视频捕获的设备和方法

    公开(公告)号：US20130250150A1

    公开(公告)日：2013-09-26

    申请号：US13894184

    申请日：2013-05-14

    申请人： Michael R. Malone ,  Pierre Henri Rene Della Nave ,  Michael Charles Brading ,  Jess Jan Young Lee ,  Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    发明人： Michael R. Malone ,  Pierre Henri Rene Della Nave ,  Michael Charles Brading ,  Jess Jan Young Lee ,  Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    IPC分类号： G02B15/00

    CPC分类号： G02B15/00 ,  H01L27/14609 ,  H01L27/14625 ,  H04N5/2258 ,  H04N5/23232 ,  H04N5/23296 ,  H04N5/37452

    摘要： In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array may include at least four megapixels and the second image sensor array may include one-half or less than the number of pixels in the first image sensor array.

    摘要翻译： 在各种示例性实施例中，提供了一种成像系统和方法。 在一个实施例中，系统包括第一图像传感器阵列，第一光学系统，用于投影第一图像传感器阵列上的第一图像，第一光学系统具有第一缩放级别。 第二光学系统是在第二图像传感器阵列上投影第二图像，第二光学系统具有第二缩放水平。 第二图像传感器阵列和第二光学系统指向与第一图像传感器阵列和第一光学系统相同的方向。 第二缩放级别大于第一缩放级别，使得投影到第二图像传感器阵列上的第二图像放大在投影在第一图像传感器阵列上的第一图像的一部分上。 第一图像传感器阵列可以包括至少四百万像素，并且第二图像传感器阵列可以包括第一图像传感器阵列中的像素数量的一半或更小。

    IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES
    8.
    发明申请
    IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES 有权
    使用敏感半导体二极管的图像传感器

    公开(公告)号：US20110226934A1

    公开(公告)日：2011-09-22

    申请号：US13051320

    申请日：2011-03-18

    申请人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    发明人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    IPC分类号： H01L27/148 ,  H01L31/0232

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H04N9/045

    摘要： In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region.

    摘要翻译： 在各种示例性实施例中，本发明主题是图像传感器和形成图像传感器的方法。 在一个实施例中，图像传感器包括半导体衬底和多个像素区域。 每个像素区域包括在基底上的光敏材料，光敏材料定位成接收光。 每个像素区域的像素电路也包括在传感器中。 每个像素电路包括形成在半导体衬底上的电荷存储器和读出电路。 非金属接触区域位于电荷存储器和相应像素区域的光敏材料之间，电荷存储器通过非金属接触区域与相应像素区域的光敏材料电连通。

    LAYOUT AND OPERATION OF PIXELS FOR IMAGE SENSORS
    10.
    发明申请
    LAYOUT AND OPERATION OF PIXELS FOR IMAGE SENSORS 有权
    图像传感器像素的布局和操作

    公开(公告)号：US20150357360A1

    公开(公告)日：2015-12-10

    申请号：US14734760

    申请日：2015-06-09

    申请人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    发明人： Hui Tian ,  Igor Constantin Ivanov ,  Edward Hartley Sargent

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14605 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14647 ,  H01L27/14652 ,  H01L2224/48091 ,  H04N9/045 ,  H01L2924/00014

    摘要： Various embodiments include methods and apparatuses for forming and using pixels for image sensors. In one embodiment, an image sensor having at least two pixel electrodes per color region, and having at least two modes is disclosed. The example image sensor includes a first, unbinned, mode; and a second, binned, mode. In the first, unbinned mode, the at least two pixel electrodes per color region are to be reset to substantially similar levels. In the second, binned mode, a first pixel electrode of the at the least two pixel electrodes is to be reset to a high voltage that results in efficient collection of photocharge, and a second pixel electrode of the at the least two pixel electrodes is to be reset to a low voltage that results in less efficient collection of photocharge. Other methods and apparatuses are disclosed.

    摘要翻译： 各种实施例包括用于形成和使用图像传感器的像素的方法和装置。 在一个实施例中，公开了一种具有每个颜色区域至少两个像素电极并具有至少两种模式的图像传感器。 示例图像传感器包括第一，未组合的模式; 和第二个binned模式。 在第一种非混合模式中，每个颜色区域的至少两个像素电极将被重置为基本相似的水平。 在第二种装载模式中，将至少两个像素电极的第一像素电极复位到导致光电荷的有效收集的高电压，并且至少两个像素电极的第二像素电极为 复位到低电压，导致光电荷收集效率较低。 公开了其他方法和装置。