摘要:
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.
摘要:
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.
摘要:
There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor. The silicon oxide layer formation cycle includes supplying a silicon source gas, exhausting the silicon source gas remaining in the reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.
摘要:
There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor. The silicon oxide layer formation cycle includes supplying a silicon source gas, exhausting the silicon source gas remaining in the reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.
摘要:
A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.
摘要:
A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.
摘要:
A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.
摘要:
A semiconductor device is disclosed comprising an improved gate dielectric layer formed of a high dielectric alloy-like composite together with a method for fabricating the same. The semiconductor device comprises a semiconductor substrate and a gate dielectric layer consisting essentially of a high-k alloy-like composite containing a first element, a second element, and oxygen (O). The first element is at least one member selected from a first group consisting of Al, La, Y, Ga, and In. The second element is at least one member selected from a second group consisting of Hf, Zr, and Ti. A diffusion barrier is formed on the gate dielectric layer, and a gate is formed on the diffusion barrier.
摘要:
In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.
摘要:
In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.