公开(公告)号：US3707656A

公开(公告)日：1972-12-26

申请号：US3707656D

申请日：1971-02-19

Applicant: IBM

Inventor： DEWITT DAVID

IPC: H01L21/28 ,  H01L23/29 ,  H01L27/00 ,  H01L27/07 ,  H01L29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L11/14

CPC classification number: H01L29/408 ,  H01L21/28167 ,  H01L23/29 ,  H01L27/00 ,  H01L27/0788 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/114 ,  Y10S148/117 ,  H01L2924/00

Abstract: A semiconductor structure in which a substrate having surface regions of opposite type conductivity is covered with two different insulating layers. In a specific structure, the regions in the substrate form an isolated gate field effect transistor with a thin layer of silicon nitride forming the insulation in the gate portion and a thicker layer of silicon dioxide forming the insulation over the remainder of the device.

Abstract translation: 具有相反导电性的表面区域的基板被两个不同的绝缘层覆盖的半导体结构。 在特定结构中，衬底中的区域形成隔离栅极场效应晶体管，其具有在栅极部分中形成绝缘体的氮化硅薄层，并且在器件的其余部分上形成更厚的二氧化硅层。

公开(公告)号：US3636384A

公开(公告)日：1972-01-18

申请号：US3636384D

申请日：1970-09-14

Applicant: IBM

Inventor： DEWITT DAVID

IPC: H03K17/14 ,  H03K17/60 ,  H03K19/086 ,  H03K1/12

CPC classification number: H03K17/603 ,  H03K17/14 ,  H03K19/086

Abstract: A current-switch emitter-follower is provided with a circuit which compensates for the variations in base-to-emitter voltage due to variations in temperature. The circuit comprises a regulated power supply which maintains its output at a predetermined level with respect to a reference potential such as ground. The power supply includes a transistor having its emitter at said reference potential. The base of this transistor is connected to the power supply output terminal which is therefore maintained at a predetermined level, the base-to-emitter voltage, with respect to said ground reference potential. The base-toemitter voltage of this transistor tracks the base-to-emitter voltage of the emitter-follower circuits so as to compensate for the variations in the latter.

公开(公告)号：US3547716A

公开(公告)日：1970-12-15

申请号：US3547716D

申请日：1968-09-05

Applicant: IBM

Inventor： DEWITT DAVID ,  GATES HARLAN R ,  PLATT ALAN

IPC: H01L21/761 ,  H01L29/08 ,  H01L7/36

CPC classification number: H01L29/0821 ,  H01L21/761 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S148/151