Electric field-responsive solid state devices
    3.
    发明授权
    Electric field-responsive solid state devices 失效
    电场响应固体状态器件

    公开(公告)号:US3365583A

    公开(公告)日:1968-01-23

    申请号:US37475864

    申请日:1964-06-12

    Applicant: IBM

    Inventor: GUNN JOHN B

    CPC classification number: H01L47/02 H03B9/12 H03K3/02 H03K3/80 H03K19/02

    Abstract: 1,070,261. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 26, 1964 [June 10, 1963], No. 21796/64. Heading H1K. The invention is based on the discovery that when an electric field in excess of 2000 volts/cm. is set up in a crystal of gallium arsenide, the current flow between a pair of electrodes on the body fluctuates at microwave frequency. In general the fluctuations are random noise but if the electrodes are at the ends of a body whose length L lies between 2 x 10 -2 and 1 x 10 -4 cm. and the field is set up by applying a suitable potential difference to these electrodes, the current fluctuations are coherent oscillations with a frequency, or set of harmonic frequencies, given by f = nv/L, where / is the frequency, n is an integer and v is the carrier drift velocity. The claims are directed to a device (which need not be made of gallium arsenide) exhibiting the above effect and to the use of the effect as a method of generating microwave oscillations. In the drawings (not shown). Figs. 1 and 2 depict the electrical characteristics of the device; Fig. 3 an oscillator circuit consisting solely of the device, a source of D.C. power and a load; and Fig. 4 a jig which is used to provide a suitably dimensioned Ga As wafer with tin electrodes. In this jig the wafer is located between two tin spheres which are subsequently melted and alloyed to the wafer, the end product (Fig. 5a, not shown) being a cylinder consisting of two tin rods with a disc of gallium arsenide between them. This is subsequently shaped by grinding to a triangular cross-section, embedded in epoxy resin, the resin partly removed to expose one rectangular face of the triangular prism and attached by that face to a suitable insulating block carrying phosphor bronze contacts to the tin electrodes. The steps of this process are depicted in Figs. 5b to 5f (not shown).

    High current low voltage regulated power supply
    4.
    发明授权
    High current low voltage regulated power supply 失效
    高电流低电压调节电源

    公开(公告)号:US3679959A

    公开(公告)日:1972-07-25

    申请号:US3679959D

    申请日:1970-12-31

    Applicant: IBM

    CPC classification number: H02M7/219 G05F1/38

    Abstract: A polyphase source of alternating current is converted to a low voltage high current regulated d.c. in a manner to conserve power and reduce costs by reduction of the number of components required therefor. To achieve this end, a single transistor is employed for each phase of the polyphase input transformer secondary winding configuration which transistor acts to perform the dual function of providing both rectification and regulation of the a.c. input.

    Abstract translation: 交流电流的多相转换为低电压高电流调节直流电。 通过减少所需组件的数量来节省电力并降低成本。 为了实现这一目的,单晶体管用于多相输入变压器次级绕组配置的每个相,其中晶体管用于执行双重功能,提供整流和调节直流。 输入。

    Transformerless power supply
    5.
    发明授权
    Transformerless power supply 失效
    无变压电源

    公开(公告)号:US3602795A

    公开(公告)日:1971-08-31

    申请号:US3602795D

    申请日:1969-10-16

    Applicant: IBM

    Inventor: GUNN JOHN B

    CPC classification number: H02M7/25

    Abstract: The power supply circuit receives as an input an AC line voltage, rectifies the line voltage to DC and transforms the voltage downwardly to a much lower level. No transformer is employed but rather the power supply circuit includes a plurality of capacitors which are charged in series by the line voltage and discharged in parallel across the load. The charging and discharging is controlled by a diode and transistor connected to each capacitor and to each other so that the diode conducts during the charging and then maintains the transistor nonconductive and the transistor conducts during the discharge when the diode is nonconductive.

    Sampling system utilizing electrooptic techniques
    7.
    发明授权
    Sampling system utilizing electrooptic techniques 失效
    采用电化学技术的采样系统

    公开(公告)号:US3614451A

    公开(公告)日:1971-10-19

    申请号:US3614451D

    申请日:1968-08-19

    Applicant: IBM

    Inventor: GUNN JOHN B

    CPC classification number: G02F1/0344 G01R1/071 G01R13/347

    Abstract: A sampling system is described which utilizes electrooptic techniques for sampling an electrical signal. Short duration light pulses are polarized and directed through a crystal exhibiting either a linear or longitudinal electrooptic effect or through a liquid showing a large Kerr effect, located in traveling wave relationship with a terminated transmission line structure. The group velocity of the polarized light, that is, the velocity of a light pulse, or the velocity, of the modulation envelope of a modulated light beam, along the electrooptic crystal and the phase velocity of the electrical signal along the transmission line structure are in synchronism. Due to electrically induced birefringence, the state of polarization of the light pulse is altered according to the electrical field intensity to which the electrooptic crystal is subjected by that portion of the electrical signal traveling coincidentally along the transmission line structure. Consequently, the transmission of the light pulse by a crossed analyzer placed at the output of the electrooptic crystal varies in response to the coincidental portion of the electrical signal. The energy of the light pulse emanating from the analyzer is detected and directed to a utilization of circuit, for example, the hold and display circuitry of a sampling oscilloscope.

    Rectifier using low saturation voltage transistors
    10.
    发明授权
    Rectifier using low saturation voltage transistors 失效
    使用低饱和电压晶体管的整流器

    公开(公告)号:US3582758A

    公开(公告)日:1971-06-01

    申请号:US3582758D

    申请日:1969-09-30

    Applicant: IBM

    Inventor: GUNN JOHN B

    CPC classification number: H02M7/2173

    Abstract: A circuit is employed utilizing the low collector-emitter voltage of a saturated transistor to obtain more efficient rectification of an alternating current supply than is achieved by a diode. A regenerative feedback circuit to the base of the transistor is provided so that once collector-to-emitter current is initiated, current is fed back to the base of the transistor to further drive the transistor into its conducting condition. However, since transistors may operate in a reverse direction when the load voltage is greater than that of the power supply, such regenerative feedback circuit is employed in series with the saturated transistor whereby any reverse collector current due to inverted operation causes the base of such transistor to be cut off, preventing any undesired reverse transistor operation.

Patent Agency Ranking