公开(公告)号：US3646525A

公开(公告)日：1972-02-29

申请号：US3646525D

申请日：1970-01-12

Applicant: IBM

Inventor： LINTON RICHARD H ,  PALFI THOMAS L

IPC: G11C11/405 ,  G11C11/406 ,  G11C11/4094 ,  G11C7/00 ,  G11C11/24 ,  G11C11/40

CPC classification number: G11C11/4094 ,  G11C11/405 ,  G11C11/406

Abstract: This specification discloses a scheme for regenerating the data in stored-charge storage cells of monolithic memories. The scheme involves the periodic reading out of the data in the storedcharge storage cells and temporarily storing the data in a regeneration cell. Thereafter the data is read out of the regeneration cell and back into the storage cell to complete the regeneration cycle.

公开(公告)号：US3706891A

公开(公告)日：1972-12-19

申请号：US3706891D

申请日：1971-06-17

Applicant: IBM

Inventor： DONOFRIO NICHOLAS M ,  LINTON RICHARD H

IPC: G11C11/403 ,  G11C11/405 ,  H01L27/00 ,  H01L27/108 ,  H03K23/08

CPC classification number: H01L27/108 ,  G11C11/403 ,  G11C11/405 ,  H01L27/00

Abstract: This specification discloses an A.C. stable or stored charge storage cell for use in monolithic memories. The cell includes a capacitor that couples a drive line to a sense line. The capacitance of this capacitor is voltage dependent so that when charged it provides a high capacitance to couple signals on the drive line to the sense line and when discharged it provides a low capacitance to prevent the coupling of signals from the drive line to the sense line.

Abstract translation: 本说明书公开了一种用于单片存储器的稳定或存储的电荷存储单元。 电池包括将驱动线耦合到感测线的电容器。 该电容器的电容取决于电压，因此当充电时，它提供高电容以将驱动线上的信号耦合到感测线路，并且当放电时，它提供低电容以防止信号从驱动线耦合到感测线 。

公开(公告)号：US3704384A

公开(公告)日：1972-11-28

申请号：US3704384D

申请日：1971-03-30

Applicant: IBM

Inventor： DESIMONE ROY R ,  LINTON RICHARD H

IPC: H01L21/00 ,  H01L21/822 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L29/00 ,  H01L29/78 ,  H01L11/14

CPC classification number: H01L21/00 ,  H01L27/04 ,  H01L27/105 ,  H01L27/108 ,  H01L29/00

Abstract: This specification discloses a polarized capacitor for use in monolithic structures, particularly those using field effect transistors. One plate of this capacitor is a metal layer overlying and insulated from a semiconductor body which has a diffusion in it adjacent to the overlying metal layer. The boundaries of this diffusion form a rectifying junction with the rest of the semiconductor body. When a voltage is applied between the metal layer and the diffusion an electric field is formed under the layer and adjacent to the diffusion so as to create an inversion layer which forms with the diffusion the second plate of the capacitor.

Abstract translation: 本说明书公开了一种用于单片结构的极化电容器，特别是使用场效应晶体管的电容器。 该电容器的一个板是与半导体本体重叠并绝缘的金属层，半导体本体在其邻近金属层附近具有扩散。 该扩散的边界与半导体本体的其余部分形成整流结。 当在金属层和扩散层之间施加电压时，在该层下方并且与扩散相邻形成电场，从而产生与电容器的第二板扩散形成的反型层。

公开(公告)号：US3588846A

公开(公告)日：1971-06-28

申请号：US3588846D

申请日：1968-12-05

Applicant: IBM

Inventor： LINTON RICHARD H ,  SONODA GEORGE Y

IPC: G11C11/402 ,  G11C11/412 ,  G11C11/40 ,  H03K3/286

CPC classification number: G11C11/4023 ,  G11C11/412

Abstract: THIS SPECIFICATION DESCRIBES A SEMICONDUCTOR STORAGE CELL FOR USE IN MONOLITHIC MEMORIES. THE STORAGE CELL HAS TWO CROSSCOUPLED FET''S WHICH FUNCTION AS THE STORAGE ELEMENTS OF THE CELL. THE CROSSCOUPLED FET''S ARE ADDRESSED POWERED THROUGH INPUT-OUTPUT FET''S WHEN THE CELL IS INTERROGATED FOR READING. WHEN THE CELL IS NOT BEING SO INTERROGATED, THE CROSSCOUPLED FET''S ARE SUPPLIED POWER FROM A SOURCE WHICH IS CONNECTED TO EACH OF THE CROSSCOUPLED FET''S BY A SEPARATE LOAD FET. THE GATES OF THOSE LOAD FET''S ARE BIASED SO THE LOAD FET''S SUPPLY CHARGE TO THE CROSSCOUPLED FET''S WHILE THE STORAGE CELL IS NOT BEING INTERROGATED BUT DRAW CHARGE FROM THE CROSSCOUPLED FET''S WHEN THE CROSSCOUPLED FET''S ARE ADDRESSED FOR READING. BY BIASING THE LOAD FET''S IN THIS

MANNER, THE POTENTIAL ON THE DRAIN CAN BE REDUCED SO AS TO REDUCE THE OVERALL POWER DISSIPATION OF THE STORAGE CELL.