公开(公告)号：US3585088A

公开(公告)日：1971-06-15

申请号：US3585088D

申请日：1968-10-18

Applicant: IBM

Inventor： SCHWUTTKE GUENTER H ,  HOWARD JAMES K ,  ROSS RUPERT F

IPC: C30B1/02 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/3205 ,  H01L23/52 ,  H01L7/36 ,  H01L7/38 ,  H01L7/54

CPC classification number: H01L21/268 ,  C30B1/02 ,  H01L21/00 ,  H01L21/2026 ,  Y10S117/904 ,  Y10S148/037 ,  Y10S148/071 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S148/152

Abstract: A METHOD OF PRODUCING ORIENTED CRYSTAL OVERGROWTH ON A MONOCRYSTALLINE OR AMORPHOUS SUBSTRATE WHEREIN A FILM OF CRYSTALLINE MATERIAL IS DEPOSITED ON THE SUBSTRATE AND REGIONS OF THE FILM ARE SELECTIVELY BOMBARDED WITH A LASER BEAM PULSE.

公开(公告)号：US3323912A

公开(公告)日：1967-06-06

申请号：US41546564

申请日：1964-12-02

Applicant: IBM

Inventor： BOLDA FRANK J ,  GULLIKSEN JOHN T ,  OLDAKER ALFRED E ,  ROSS RUPERT F

IPC: B23K35/26 ,  C22C28/00 ,  H01B1/02

CPC classification number: B23K35/26 ,  C22C28/00 ,  H01B1/02

公开(公告)号：US3695855A

公开(公告)日：1972-10-03

申请号：US3695855D

申请日：1970-01-08

Applicant: IBM

Inventor： AINSLIE NORMAN G ,  CHEROFF GEORGE ,  JUNCTION HOPEWELL ,  GRAFF WILLIAM S ,  HOWARD JAMES KENT ,  ROSS RUPERT F

IPC: H01L21/00 ,  H01L21/28 ,  H05K1/09 ,  H01B1/02

CPC classification number: H01L21/00 ,  H01L21/28 ,  H05K1/09 ,  Y10S428/929 ,  Y10S428/938 ,  Y10T29/49004 ,  Y10T428/12396 ,  Y10T428/12458 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12847 ,  Y10T428/12903

Abstract: THIS INVENTION PROVIDES A MEANS OF INCREASING THE TIMETO-FAILURE OF DOPED CONDUCTIVE STRIPES BY DEPOSITING REGIONS OF DOPANT REJUVENANT UPON REGIONS IN THE STRIPE WHEREIN DOPANT DEPLETION IS MOST APT TO OCCUR UNDER CURRENT STRESS. THIS INVENTION ALSO PROVIDES A MEANS OF REJUVENATING REGIONS WHEREIN DOPANT DEPLETION HAS OCCURRED BY PERIODICALLY APPLYING HEAT TO A MICROELECTONIC CONFIGURATION CONTAINING DOPED CONDUCTIVE THIN FILMS FOR INTERCONNECTION PURPOSES, SAID THIN FILMS CONTAINING LOCAL, DISCONTINUOUS DEPOSITS OF DOPANT REJUVENANT OVER REGIONS WITHIN THE FILM WHEREIN TEMPERATURE GRADIENTS OR DIFFUSION BARRIERS ARISE UNDER CURRENT STRESS RESULTING IN MASS FLUX DIVERGENCES IN SAID REGIONS, I.E., A RESULTANT EFFLUX OF DOPANT FROM SAID REGION. APPLICATION OF HEAT IN THIS MANNER PERMITS DIFFUSION OF DOPANT REJUVENANT FROM THE LOCALIZED DOPANT REJUVENANT SOURCE INTO THE REGION FROM WHICH DOPANT HAS MIGRATED DURING SERVICE, THEREBY REJUVENATING THE MICROELECTRONIC CONFIGURATION AND ENABLING ITS CONTINUED USE.