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    POWER MODULE AND MANUFACTURING METHOD THEREOF
    2.
    发明公开
    POWER MODULE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20230352361A1

    公开(公告)日：2023-11-02

    申请号：US17732428

    申请日：2022-04-28

    Applicant: Industrial Technology Research Institute

    Inventor： Hsin-Han Lin ,  Tai-Jyun Yu

    IPC: H01L23/373 ,  H01L21/48 ,  H01L23/538

    CPC classification number: H01L23/3735 ,  H01L21/4857 ,  H01L23/5383 ,  H01L24/29

    Abstract: Provided are a power module and a manufacturing method thereof. The power module includes an insulating substrate, a first, a second and a third conductive layers, a first thermal interface material layer, a first and a second chips and a thermal conductive layer. The insulating substrate has a first and a second surfaces opposite to each other. The first and the second conductive layers are disposed on the first surface, and electrically separated from each other. The first thermal interface material layer is disposed on the first conductive layer. The third conductive layer is disposed on the first thermal interface material layer. The first chip is disposed on the third conductive layer and electrically connected to the third conductive layer. The second chip is disposed on the second conductive layer and electrically connected to the second conductive layer. The thermal conductive layer is disposed on the second surface.

    CHIP PACKAGE
    5.
    发明申请
    CHIP PACKAGE 有权

    公开(公告)号：US20220310473A1

    公开(公告)日：2022-09-29

    申请号：US17839500

    申请日：2022-06-14

    Applicant: Industrial Technology Research Institute

    Inventor： Kuo-Shu Kao ,  Tao-Chih Chang ,  Wen-Chih Chen ,  Tai-Jyun Yu ,  Po-Kai Chiu ,  Yen-Ting Lin ,  Wei-Kuo Han

    IPC: H01L23/367 ,  H01L23/31 ,  H01L23/495 ,  H01L23/373 ,  H01L23/433

    Abstract: A chip package including a heat-dissipating device, a first thermal interface material layer disposed on the heat-dissipating device, a patterned circuit layer disposed on the first thermal interface material layer, a chip disposed on the patterned circuit layer and electrically connected to the patterned circuit layer, and an insulating encapsulant covering the chip, the patterned circuit layer, and the first thermal interface material layer is provided. The first thermal interface material layer has a thickness between 100 μm and 300 μm. The first thermal interface material layer is located between the patterned circuit layer and the heat-dissipating device.

    Chip package
    6.
    发明授权
    Chip package 有权

    公开(公告)号：US11387159B2

    公开(公告)日：2022-07-12

    申请号：US16808369

    申请日：2020-03-04

    Applicant: Industrial Technology Research Institute

    Inventor： Kuo-Shu Kao ,  Tao-Chih Chang ,  Wen-Chih Chen ,  Tai-Jyun Yu ,  Po-Kai Chiu ,  Yen-Ting Lin ,  Wei-Kuo Han

    IPC: H01L23/367 ,  H01L23/373 ,  H01L23/495 ,  H01L23/31 ,  H01L23/433

    Abstract: A chip package including a lead frame, a first chip, a heat dissipation structure, and an insulating encapsulant is provided. The lead frame includes a chip pad having a first surface and a second surface opposite to the first surface and a lead connected to the chip pad. The first chip is disposed on the first surface of the chip pad and electrically connected to the lead of the lead frame and to the outside of the insulating encapsulant via the lead. The head dissipation structure is disposed on the second surface of the chip pad and includes a thermal interface material layer attached to the second surface. The insulating encapsulant encapsulates the first chip, the heat dissipation structure, and a portion of the lead frame.

    CHIP PACKAGE
    7.
    发明申请
    CHIP PACKAGE 审中-公开

    公开(公告)号：US20190109064A1

    公开(公告)日：2019-04-11

    申请号：US15976886

    申请日：2018-05-11

    Applicant: Industrial Technology Research Institute

    Inventor： Kuo-Shu Kao ,  Tao-Chih Chang ,  Wen-Chih Chen ,  Tai-Jyun Yu ,  Po-Kai Chiu ,  Yen-Ting Lin ,  Wei-Kuo Han

    IPC: H01L23/367 ,  H01L23/31 ,  H01L23/373 ,  H01L23/495

    Abstract: A chip package including a lead frame, a first chip, a heat dissipation structure, and an insulating encapsulant is provided. The lead frame includes a chip pad having a first surface and a second surface opposite to the first surface and a lead connected to the chip pad. The first chip is disposed on the first surface of the chip pad and electrically connected to the lead of the lead frame and to the outside of the insulating encapsulant via the lead. The head dissipation structure is disposed on the second surface of the chip pad and includes a thermal interface material layer attached to the second surface. The insulating encapsulant encapsulates the first chip, the heat dissipation structure, and a portion of the lead frame.

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