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公开(公告)号:US20210035914A1
公开(公告)日:2021-02-04
申请号:US16849999
申请日:2020-04-16
发明人: Hsin-Han Lin , Yu-Min Lin , Tao-Chih Chang
IPC分类号: H01L23/538 , H01L25/065 , H01L23/31 , H01L23/367
摘要: A chip package structure including first and second insulating layers, first and second circuit structures, a chip on the first circuit structure, an encapsulant, a conductive through via, and first and second heat dissipation layers is provided. The first circuit structure is disposed at the first surface of the first insulating layer. The bottom electrode of the chip is electrically connected to the first circuit structure. The second circuit structure is disposed on the chip and electrically connected to the top electrode of the chip. The encapsulant encapsulates the first and second circuit structures and the chip. The conductive through via is disposed in the encapsulant and connects the first and second circuit structures. The second insulating layer is disposed on the second circuit structure. The first heat dissipation layer is disposed on the first insulating layer. The second heat dissipation layer is disposed on the second insulating layer.
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公开(公告)号:USD976852S1
公开(公告)日:2023-01-31
申请号:US29738677
申请日:2020-06-18
设计人: Sheng-Tsai Wu , Hsin-Han Lin , Yuan-Yin Lo , Kuo-Shu Kao , Tai-Jyun Yu , Han-Lin Wu , Yen-Ting Lin
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公开(公告)号:US20240243097A1
公开(公告)日:2024-07-18
申请号:US18415677
申请日:2024-01-18
发明人: Yu-Ming Peng , I-Hung Chiang , Chun-Kai Liu , Po-Kai Chiu , Hsin-Han Lin , Kuo-Shu Kao
IPC分类号: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/498
CPC分类号: H01L25/0655 , H01L23/3121 , H01L23/49838 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/16225 , H01L2224/32225 , H01L2224/48155 , H01L2224/73253 , H01L2224/73265 , H01L2924/181
摘要: A power module package structure includes a first substrate and a power component. The first substrate includes at least one conductive layer on a surface thereof. The power component includes a first chip and a first spacer. The first chip has at least one electrode. The first spacer in a heat dissipation space between the first substrate and the first chip includes an insulating heat dissipation layer in the heat dissipation space and multiple vertical conductive connectors, each of the vertical conductive connectors penetrates the insulating heat dissipation layer. The insulating heat dissipation layer surrounds the vertical conductive connectors and electrically isolates the vertical conductive connectors. The vertical conductive connector includes two opposite ends, one end electrically connected to the conductive layer, and the other end electrically connected to the electrode to form a conductive path and a heat dissipation path between the first chip and the first substrate.
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公开(公告)号:US20230352361A1
公开(公告)日:2023-11-02
申请号:US17732428
申请日:2022-04-28
发明人: Hsin-Han Lin , Tai-Jyun Yu
IPC分类号: H01L23/373 , H01L21/48 , H01L23/538
CPC分类号: H01L23/3735 , H01L21/4857 , H01L23/5383 , H01L24/29
摘要: Provided are a power module and a manufacturing method thereof. The power module includes an insulating substrate, a first, a second and a third conductive layers, a first thermal interface material layer, a first and a second chips and a thermal conductive layer. The insulating substrate has a first and a second surfaces opposite to each other. The first and the second conductive layers are disposed on the first surface, and electrically separated from each other. The first thermal interface material layer is disposed on the first conductive layer. The third conductive layer is disposed on the first thermal interface material layer. The first chip is disposed on the third conductive layer and electrically connected to the third conductive layer. The second chip is disposed on the second conductive layer and electrically connected to the second conductive layer. The thermal conductive layer is disposed on the second surface.
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公开(公告)号:US11239168B2
公开(公告)日:2022-02-01
申请号:US16849999
申请日:2020-04-16
发明人: Hsin-Han Lin , Yu-Min Lin , Tao-Chih Chang
IPC分类号: H01L23/538 , H01L23/367 , H01L23/31 , H01L25/065
摘要: A chip package structure including first and second insulating layers, first and second circuit structures, a chip on the first circuit structure, an encapsulant, a conductive through via, and first and second heat dissipation layers is provided. The first circuit structure is disposed at the first surface of the first insulating layer. The bottom electrode of the chip is electrically connected to the first circuit structure. The second circuit structure is disposed on the chip and electrically connected to the top electrode of the chip. The encapsulant encapsulates the first and second circuit structures and the chip. The conductive through via is disposed in the encapsulant and connects the first and second circuit structures. The second insulating layer is disposed on the second circuit structure. The first heat dissipation layer is disposed on the first insulating layer. The second heat dissipation layer is disposed on the second insulating layer.
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公开(公告)号:US10672677B2
公开(公告)日:2020-06-02
申请号:US15979403
申请日:2018-05-14
发明人: Jing-Yao Chang , Tao-Chih Chang , Kuo-Shu Kao , Fang-Jun Leu , Hsin-Han Lin , Chih-Ming Tzeng , Hsiao-Ming Chang , Chih-Ming Shen
IPC分类号: H01L23/31 , H01L23/36 , H01L23/373 , H01L23/495 , H01L23/498 , H01L23/00
摘要: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.
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