公开(公告)号：US20190181249A1

公开(公告)日：2019-06-13

申请号：US16306540

申请日：2016-07-01

Applicant: Intel Corporation

Inventor： SASIKANTH MANIPATRUNI ,  ANURAG CHAUDHRY ,  DMITRI E. NIKONOV ,  JASMEET S. CHAWLA ,  CHRISTOPHER J. WIEGAND ,  KANWALJIT SINGH ,  UYGAR E. AVCI ,  IAN A. YOUNG

IPC: H01L29/66 ,  H01L29/47 ,  H01L29/78 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/06 ,  H01L21/285

Abstract: Embodiments herein describe techniques for a semi-conductor device comprising a channel having a first semiconductor material; a source contact coupled to the channel, comprising a first Heusler alloy; and a drain contact coupled to the channel, comprising a second Heusler alloy. The first Heusler alloy is lattice-matched to the first semiconductor material within a first predetermined threshold. A first Schottky barrier between the channel and the source contact, and a second Schottky barrier between the channel and the drain contact are negative, or smaller than another predetermined threshold. The source contact and the drain contact can be applied to a strained silicon transistor, an III-V transistor, a tunnel field-effect transistor, a dichalcogenide (MX2) transistor, and a junctionless nanowire transistor.

公开(公告)号：US20190049514A1

公开(公告)日：2019-02-14

申请号：US16073688

申请日：2016-04-01

Applicant: INTEL CORPORATION

Inventor： KEVIN P. O'BRIEN ,  KAAN OGUZ ,  CHRISTOPHER J. WIEGAND ,  MARK L. DOCZY ,  BRIAN S. DOYLE ,  MD TOFIZUR RAHMAN ,  OLEG GOLONZKA ,  TAHIR GHANI

IPC: G01R31/28 ,  G01R31/315 ,  H01L21/66 ,  G01R33/09 ,  H01L43/12

CPC classification number: G01R31/2831 ,  G01N24/10 ,  G01R31/315 ,  G01R33/098 ,  G01R33/60 ,  G01R35/00 ,  H01L22/14 ,  H01L43/12

Abstract: Techniques are disclosed for carrying out ferromagnetic resonance (FMR) testing on whole wafers populated with one or more buried magnetic layers. The techniques can be used to verify or troubleshoot processes for forming the buried magnetic layers, without requiring the wafer to be broken. The techniques can also be used to distinguish one magnetic layer from others in the same stack, based on a unique frequency response of that layer. One example methodology includes moving a wafer proximate to a waveguide (within 500 microns, but without shorting), energizing a DC magnetic field near the target measurement point, applying an RF input signal through the waveguide, collecting resonance spectra of the frequency response of the waveguide, and decomposing the resonance spectra into magnetic properties of the target layer. One or both of the DC magnetic field and RF input signal can be swept to generate a robust set of resonance spectra.