Micro-electromechanical switch having a conductive compressible electrode
    1.
    发明申请
    Micro-electromechanical switch having a conductive compressible electrode 有权
    具有导电可压缩电极的微机电开关

    公开(公告)号:US20030098618A1

    公开(公告)日:2003-05-29

    申请号:US09996148

    申请日:2001-11-28

    Abstract: A micro-electro mechanical switch having a restoring force sufficiently large to overcome stiction is described. The switch is provided with a deflectable conductive beam and multiple electrodes coated with an elastically deformable conductive layer. A restoring force which is initially generated by a single spring constant k0 upon the application of a control voltage between the deflectable beam and a control electrode coplanar to the contact electrodes is supplemented by adding to k0 additional spring constants k1, . . . , kn provided by the deformable layers, once the switch nears closure and the layers compress. In another embodiment, deformable, spring-like elements are used in lieu of the deformable layers. In an additional embodiment, the compressible layers or deformable spring-like elements are affixed to the deflecting beam facing the switch electrodes

    Abstract translation: 描述了具有足够大以克服静止的恢复力的微电机械开关。 开关设置有可偏转的导电束和涂覆有可弹性变形的导电层的多个电极。 在施加可调光束和与接触电极共面的控制电极之间的控制电压时,最初由单个弹簧常数k0产生的恢复力通过增加k0个额外的弹簧常数k1来补充。 。 。 由可变形层提供的,一旦开关接近闭合并且层压缩。 在另一个实施例中,使用可变形的弹簧状元件代替可变形层。 在另外的实施例中,可压缩层或可变形的弹簧状元件固定到面向开关电极的偏转梁

    Lateral microelectromechanical system switch
    3.
    发明申请
    Lateral microelectromechanical system switch 有权
    侧向微机电系统开关

    公开(公告)号:US20030122640A1

    公开(公告)日:2003-07-03

    申请号:US10035840

    申请日:2001-12-31

    CPC classification number: H01H59/0009 H01H2001/0068 H01H2001/0078

    Abstract: A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

    Abstract translation: 一种开关,其包括基板,细长可动部分,设置在所述部分一侧的一对电触点,设置在该部分的一侧并与所述一对电触头分离的致动电极,其中所述部分,所述触点 并且所述电极设置在所述基板上,其中所述细长可动部分被布置和尺寸设定成使得所述部件能够沿大致横向方向朝向所述触点移动; 可移动部分包括固定到头部的中心细长构件,其具有设置在一侧的电触头。 可移动部分的一端通过各种锚定装置附接到基板。

    Integrated on-chip half-wave dipole antenna structure
    4.
    发明申请
    Integrated on-chip half-wave dipole antenna structure 失效
    集成片上半波偶极天线结构

    公开(公告)号:US20020145566A1

    公开(公告)日:2002-10-10

    申请号:US09811940

    申请日:2001-03-19

    CPC classification number: H01Q19/10 H01Q1/2283 H01Q1/38 H01Q9/28

    Abstract: A semiconductor device is presented which is composed of two adjacent semiconductor chips. Each semiconductor chip has an integrated half-wave dipole antenna structure located thereon. The semiconductor chips are oriented so that the half-wave dipole antenna segments extend away from each other, allowing the segments to be effectively mated and thus form a complete full-wave dipole antenna. The two solder bumps which form the antenna are separated by a gap of approximately 200 microns. The length of each solder bump antenna is based on the wavelength and the medium of collection. Phased array antenna arrays may also be constructed from a plurality of these semiconductor chip antennae.

    Abstract translation: 提出了由两个相邻的半导体芯片组成的半导体器件。 每个半导体芯片具有位于其上的集成的半波偶极天线结构。 半导体芯片被定向成使得半波偶极天线段彼此远离,从而允许这些段被有效配合,从而形成完整的全波偶极子天线。 形成天线的两个焊料凸块间隔约200微米。 每个焊料凸块天线的长度是基于波长和收集介质。 相控阵天线阵列也可以由多个这些半导体芯片天线构成。

    Integrated toroidal coil inductors for IC devices
    5.
    发明申请
    Integrated toroidal coil inductors for IC devices 有权
    用于IC器件的集成环形线圈电感器

    公开(公告)号:US20030011041A1

    公开(公告)日:2003-01-16

    申请号:US10238746

    申请日:2002-09-10

    Abstract: A means for fabrication of solenoidal inductors integrated in a semiconductor chip is provided. The solenoidal coil is partially embedded in a deep well etched into the chip substrate. The non-embedded part of the coil is fabricated as part of the BEOL metallization layers. This allows for a large cross-sectional area of the solenoid turns, thus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The fabrication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric followed by fabrication of the part of the coil that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric and planarization of same by CMP. After planarization the fabrication of the remaining part of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil part of it may be built by electrodeposition through a mask on top of the BEOL layers.

    Abstract translation: 提供一种用于制造集成在半导体芯片中的螺线管电感器的装置。 螺线管线圈部分地嵌入到蚀刻到芯片衬底中的深阱中。 线圈的非嵌入部分被制造为BEOL金属化层的一部分。 这允许螺线管的大的横截面积的匝数,从而减少匝间电容耦合。 由于本发明的螺线管线圈具有大直径的横截面,所以线圈可以制造成具有大的电感值,并且占据芯片的小面积。 所述制造工艺包括在所有FEOL步骤完成之后蚀刻衬底中的深空腔; 用电介质衬里所述空腔,然后制造将通过掩模沉积导电材料金属而嵌入的线圈部分; 通过CMP沉积其相同的电介质和平面化。 在平坦化之后,螺线管线圈的剩余部分的制造被制造为BEOL中的金属化的一部分(即,作为BEOL的线/通路)。 为了进一步增加螺线管线圈的横截面,可以通过电沉积通过BEOL层顶部的掩模来构建。

    Integrated coil inductors for IC devices

    公开(公告)号:US20020130386A1

    公开(公告)日:2002-09-19

    申请号:US09808381

    申请日:2001-03-14

    Abstract: A means for fabrication of solenoidal inductors integrated in a semiconductor chip is provided. The solenoidal coil is partially embedded in a deep well etched into the chip substrate. The non-embedded part of the coil is fabricated as part of the BEOL metallization layers. This allows for a large cross-sectional area of the solenoid turns, thus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The fabrication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric followed by fabrication of the part of the coil that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric and planarization of same by CMP. After planarization the fabrication of the remaining part of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil part of it may be built by electrodeposition through a mask on top of the BEOL layers.

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