Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging
    1.
    发明申请
    Negative thermal expansion system (NTEs) device for TCE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging 有权
    负热膨胀系统(NTE)装置用于弹性体复合材料中的TCE补偿和微电子封装中的导电弹性体互连

    公开(公告)号:US20040110322A1

    公开(公告)日:2004-06-10

    申请号:US10310532

    申请日:2002-12-05

    Abstract: A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called nullsmart materialsnull or nullresponsive materials.null Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

    Abstract translation: 用于微电子封装中弹性体复合材料和导电弹性体互连的TCE补偿或CTE补偿的负热膨胀系统(NTE)装置。 本发明的一个方面提供了一种用于制造具有负热膨胀系数的微机械装置的方法,该热膨胀系数可以制成用于操纵材料的TCE的复合材料。 这些设备和这些设备制成的复合材料属于称为“智能材料”或“响应材料”的材料类别。 本发明的另一方面提供了由双重相对的双层材料构成的微器件,其中两个双层仅在外围边缘处彼此附接,并且其中双层本身处于由温度定义的参考温度下的最小应力条件 双层形成。 当器件温度降低到参考温度或加工温度以下时,这些器件具有技术上有用的特性。

    Micro-electromechanical switch having a conductive compressible electrode
    2.
    发明申请
    Micro-electromechanical switch having a conductive compressible electrode 有权
    具有导电可压缩电极的微机电开关

    公开(公告)号:US20030098618A1

    公开(公告)日:2003-05-29

    申请号:US09996148

    申请日:2001-11-28

    Abstract: A micro-electro mechanical switch having a restoring force sufficiently large to overcome stiction is described. The switch is provided with a deflectable conductive beam and multiple electrodes coated with an elastically deformable conductive layer. A restoring force which is initially generated by a single spring constant k0 upon the application of a control voltage between the deflectable beam and a control electrode coplanar to the contact electrodes is supplemented by adding to k0 additional spring constants k1, . . . , kn provided by the deformable layers, once the switch nears closure and the layers compress. In another embodiment, deformable, spring-like elements are used in lieu of the deformable layers. In an additional embodiment, the compressible layers or deformable spring-like elements are affixed to the deflecting beam facing the switch electrodes

    Abstract translation: 描述了具有足够大以克服静止的恢复力的微电机械开关。 开关设置有可偏转的导电束和涂覆有可弹性变形的导电层的多个电极。 在施加可调光束和与接触电极共面的控制电极之间的控制电压时,最初由单个弹簧常数k0产生的恢复力通过增加k0个额外的弹簧常数k1来补充。 。 。 由可变形层提供的,一旦开关接近闭合并且层压缩。 在另一个实施例中,使用可变形的弹簧状元件代替可变形层。 在另外的实施例中,可压缩层或可变形的弹簧状元件固定到面向开关电极的偏转梁

    Fuse structure and method to form the same
    3.
    发明申请
    Fuse structure and method to form the same 失效
    保险丝结构和方法形成相同

    公开(公告)号:US20030089962A1

    公开(公告)日:2003-05-15

    申请号:US09992344

    申请日:2001-11-14

    CPC classification number: H01L23/5256 H01L2924/0002 H01L2924/00

    Abstract: A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse element connected to the electrodes, and an interface wall. The fuse element is positioned external to the insulator, with a gap juxtaposed between the insulator and the fuse element. The interface wall further comprises a first side wall, a second side wall, and an inner wall, wherein the inner wall is disposed within the gap. The fuse electrodes are diametrically opposed to one another, and the fuse element is perpendicularly disposed above the fuse electrodes. The fuse element is either electroplatted, electroless plated, or is an ultra thin fuse.

    Abstract translation: 用于熔丝结构的方法和结构包括绝缘体层,穿过绝缘体层延伸到下面的布线层的多个熔丝电极,连接到电极的电镀熔丝元件和界面壁。 保险丝元件位于绝缘体的外部,并且在绝缘体和保险丝元件之间并置有间隙。 界面壁还包括第一侧壁,第二侧壁和内壁,其中内壁设置在间隙内。 熔丝电极彼此直径相对,并且熔丝元件垂直地设置在熔丝电极的上方。 保险丝元件是电镀,无电镀,或是超薄保险丝。

    Lateral microelectromechanical system switch
    4.
    发明申请
    Lateral microelectromechanical system switch 有权
    侧向微机电系统开关

    公开(公告)号:US20030122640A1

    公开(公告)日:2003-07-03

    申请号:US10035840

    申请日:2001-12-31

    CPC classification number: H01H59/0009 H01H2001/0068 H01H2001/0078

    Abstract: A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

    Abstract translation: 一种开关,其包括基板,细长可动部分,设置在所述部分一侧的一对电触点,设置在该部分的一侧并与所述一对电触头分离的致动电极,其中所述部分,所述触点 并且所述电极设置在所述基板上,其中所述细长可动部分被布置和尺寸设定成使得所述部件能够沿大致横向方向朝向所述触点移动; 可移动部分包括固定到头部的中心细长构件,其具有设置在一侧的电触头。 可移动部分的一端通过各种锚定装置附接到基板。

    Low k dielectric film deposition process
    5.
    发明申请
    Low k dielectric film deposition process 审中-公开
    低k电介质膜沉积工艺

    公开(公告)号:US20030087043A1

    公开(公告)日:2003-05-08

    申请号:US10005861

    申请日:2001-11-08

    CPC classification number: C23C16/30 C23C16/505

    Abstract: A process of depositing a low k dielectric film on a substrate includes using plasma enhance chemical vapor deposition to deposit a hydrogenated oxidized silicon carbon film. The process includes flowing a precursor gas containing Si, C, H and an oxygen-providing gas into the PECVD chamber. The precursor gas and the oxygen-providing gas are substantially free from nitrogen. The oxygen-providing gas is selected from the group consisting of oxygen, carbon monoxide, carbon dioxide, ozone, water vapor and a combination of at least one of the foregoing.

    Abstract translation: 在衬底上沉积低k电介质膜的工艺包括使用等离子体增强化学气相沉积来沉积氢化的氧化硅碳膜。 该方法包括使含有Si,C,H和氧供给气体的前体气体流入PECVD室。 前体气体和供氧气体基本上不含氮气。 供氧气体选自氧气,一氧化碳,二氧化碳,臭氧,水蒸汽以及前述的至少一种的组合。

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