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公开(公告)号:US20180351056A1
公开(公告)日:2018-12-06
申请号:US15951195
申请日:2018-04-12
Inventor: Yi-Hsiang Huang , Cheng-Chung Lee , Jia-Chong Ho , Wei-Han Chen , Shin-Hong Kuo
CPC classification number: H01L33/56 , H01L27/156 , H01L33/08 , H01L33/405 , H01L33/504
Abstract: A photoelectric device package including a substrate, a first circuit layer, a carrier structure, a second circuit layer, at least one photoelectric device, and a first encapsulation layer is provided. The first circuit layer is disposed on the substrate. The carrier structure is disposed on the substrate and covers the first circuit layer. The carrier structure includes a first dielectric layer, a second dielectric layer, and an elastic layer disposed between the first dielectric layer and the second dielectric layer. The Young's modulus of the elastic layer is less than the Young's modulus of the first dielectric layer and the second dielectric layer. The second circuit layer is disposed on the carrier structure. The photoelectric device is disposed on the carrier structure and is electrically connected to the first and second circuit layers. The first encapsulation layer is disposed on the carrier structure and encapsulates the photoelectric device.
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公开(公告)号:US09368441B2
公开(公告)日:2016-06-14
申请号:US14560101
申请日:2014-12-04
Applicant: Industrial Technology Research Institute
Inventor: Jing-Yi Yan , Wu-Wei Tsai , Wei-Cheng Kao , Wei-Han Chen
IPC: H01L27/14 , H01L23/498 , H01L23/28 , H01L23/00 , H01L21/56 , H01L21/768
CPC classification number: H01L23/49827 , H01L21/56 , H01L21/76801 , H01L23/28 , H01L23/3121 , H01L23/564 , H01L24/19 , H01L2224/04105 , H01L2224/24137 , H01L2224/73267 , H01L2224/82 , H01L2224/92244
Abstract: An electronic component and a method for fabricating the electronic component are provided. The electronic component includes a carrier, a first metal layer, a dielectric layer, a semiconductor layer, a flexible layer, at least one first opening, and at least one second metal layer. The first metal layer is disposed on the carrier. The dielectric layer is disposed on the first metal layer, and has a pattern consistent with a pattern of the dielectric layer. The semiconductor layer is disposed on the dielectric layer. The flexible layer is disposed on the carrier and encapsulates the first metal layer, the dielectric layer and the semiconductor layer. The flexible layer has a Young's modulus less than 40 GPa. The first opening penetrates the flexible layer. The second metal layer is disposed on the flexible layer and in the first opening and is electrically connected with the semiconductor layer.
Abstract translation: 提供了电子部件和用于制造电子部件的方法。 电子部件包括载体,第一金属层,电介质层,半导体层,柔性层,至少一个第一开口和至少一个第二金属层。 第一金属层设置在载体上。 电介质层设置在第一金属层上,并且具有与电介质层的图案一致的图案。 半导体层设置在电介质层上。 柔性层设置在载体上并封装第一金属层,电介质层和半导体层。 柔性层的杨氏模量小于40GPa。 第一个开口穿透柔性层。 第二金属层设置在柔性层和第一开口中并与半导体层电连接。
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公开(公告)号:US10276761B2
公开(公告)日:2019-04-30
申请号:US15951195
申请日:2018-04-12
Inventor: Yi-Hsiang Huang , Cheng-Chung Lee , Jia-Chong Ho , Wei-Han Chen , Shin-Hong Kuo
Abstract: A photoelectric device package including a substrate, a first circuit layer, a carrier structure, a second circuit layer, at least one photoelectric device, and a first encapsulation layer is provided. The first circuit layer is disposed on the substrate. The carrier structure is disposed on the substrate and covers the first circuit layer. The carrier structure includes a first dielectric layer, a second dielectric layer, and an elastic layer disposed between the first dielectric layer and the second dielectric layer. The Young's modulus of the elastic layer is less than the Young's modulus of the first dielectric layer and the second dielectric layer. The second circuit layer is disposed on the carrier structure. The photoelectric device is disposed on the carrier structure and is electrically connected to the first and second circuit layers. The first encapsulation layer is disposed on the carrier structure and encapsulates the photoelectric device.
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公开(公告)号:US09391208B2
公开(公告)日:2016-07-12
申请号:US14517065
申请日:2014-10-17
Applicant: Industrial Technology Research Institute
Inventor: Jing-Yi Yan , Wu-Wei Tsai , Wei-Cheng Kao , Wei-Han Chen
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L23/538
CPC classification number: H01L29/78606 , H01L23/5387 , H01L24/19 , H01L24/25 , H01L24/82 , H01L27/1218 , H01L27/1222 , H01L27/1248 , H01L27/1259 , H01L29/66742 , H01L29/78603 , H01L2224/04105 , H01L2224/24137 , H01L2224/73267 , H01L2224/92244
Abstract: An electronic device including at least one electronic component and a method of manufacturing the same are provided. The electronic device may include a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer, and a first metal layer disposed on the insulating layer. The insulating layer may have a pattern corresponding to a pattern of the semiconductor layer or the first metal layer. The flexible layer has a Young's modulus less than 40 GPa and is disposed on the substrate to encapsulate the semiconductor layer. At least one first opening penetrates the flexible layer. At least one second metal layer is disposed on the flexible layer and in the first opening and electrically connected to the semiconductor layer.
Abstract translation: 提供了包括至少一个电子部件的电子设备及其制造方法。 电子器件可以包括衬底,设置在衬底上的半导体层,设置在半导体层上的绝缘层和设置在绝缘层上的第一金属层。 绝缘层可以具有对应于半导体层或第一金属层的图案的图案。 柔性层的杨氏模量小于40GPa,并且设置在衬底上以封装半导体层。 至少一个第一开口穿透柔性层。 至少一个第二金属层设置在柔性层上和第一开口中并电连接至半导体层。
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公开(公告)号:US20160111551A1
公开(公告)日:2016-04-21
申请号:US14517065
申请日:2014-10-17
Applicant: Industrial Technology Research Institute
Inventor: Jing-Yi Yan , Wu-Wei Tsai , Wei-Cheng Kao , Wei-Han Chen
IPC: H01L29/786 , H01L29/66 , H01L23/538 , H01L27/12
CPC classification number: H01L29/78606 , H01L23/5387 , H01L24/19 , H01L24/25 , H01L24/82 , H01L27/1218 , H01L27/1222 , H01L27/1248 , H01L27/1259 , H01L29/66742 , H01L29/78603 , H01L2224/04105 , H01L2224/24137 , H01L2224/73267 , H01L2224/92244
Abstract: An electronic device including at least one electronic component and a method of manufacturing the same are provided. The electronic device may include a substrate, a semiconductor layer disposed on the substrate, an insulating layer disposed on the semiconductor layer, and a first metal layer disposed on the insulating layer. The insulating layer may have a pattern corresponding to a pattern of the semiconductor layer or the first metal layer. The flexible layer has a Young's modulus less than 40 GPa and is disposed on the substrate to encapsulate the semiconductor layer. At least one first opening penetrates the flexible layer. At least one second metal layer is disposed on the flexible layer and in the first opening and electrically connected to the semiconductor layer.
Abstract translation: 提供了包括至少一个电子部件的电子设备及其制造方法。 电子器件可以包括衬底,设置在衬底上的半导体层,设置在半导体层上的绝缘层和设置在绝缘层上的第一金属层。 绝缘层可以具有对应于半导体层或第一金属层的图案的图案。 柔性层的杨氏模量小于40GPa,并且设置在衬底上以封装半导体层。 至少一个第一开口穿透柔性层。 至少一个第二金属层设置在柔性层上和第一开口中并电连接至半导体层。
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公开(公告)号:US20150348894A1
公开(公告)日:2015-12-03
申请号:US14560101
申请日:2014-12-04
Applicant: Industrial Technology Research Institute
Inventor: Jing-Yi Yan , Wu-Wei Tsai , Wei-Cheng Kao , Wei-Han Chen
IPC: H01L23/498 , H01L21/768 , H01L21/56 , H01L23/28 , H01L23/00
CPC classification number: H01L23/49827 , H01L21/56 , H01L21/76801 , H01L23/28 , H01L23/3121 , H01L23/564 , H01L24/19 , H01L2224/04105 , H01L2224/24137 , H01L2224/73267 , H01L2224/82 , H01L2224/92244
Abstract: An electronic component and a method for fabricating the electronic component are provided. The electronic component includes a carrier, a first metal layer, a dielectric layer, a semiconductor layer, a flexible layer, at least one first opening, and at least one second metal layer. The first metal layer is disposed on the carrier. The dielectric layer is disposed on the first metal layer, and has a pattern consistent with a pattern of the dielectric layer. The semiconductor layer is disposed on the dielectric layer. The flexible layer is disposed on the carrier and encapsulates the first metal layer, the dielectric layer and the semiconductor layer. The flexible layer has a Young's modulus less than 40 GPa. The first opening penetrates the flexible layer. The second metal layer is disposed on the flexible layer and in the first opening and is electrically connected with the semiconductor layer.
Abstract translation: 提供了电子部件和用于制造电子部件的方法。 电子部件包括载体,第一金属层,电介质层,半导体层,柔性层,至少一个第一开口和至少一个第二金属层。 第一金属层设置在载体上。 电介质层设置在第一金属层上,并且具有与电介质层的图案一致的图案。 半导体层设置在电介质层上。 柔性层设置在载体上并封装第一金属层,电介质层和半导体层。 柔性层的杨氏模量小于40GPa。 第一个开口穿透柔性层。 第二金属层设置在柔性层和第一开口中并与半导体层电连接。
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公开(公告)号:US20190013378A1
公开(公告)日:2019-01-10
申请号:US15691755
申请日:2017-08-31
Inventor: Tai-Jui Wang , Chieh-Wei Feng , Meng-Jung Yang , Wei-Han Chen , Shao-An Yan , Tsu-Chiang Chang
IPC: H01L27/32
CPC classification number: H01L27/3276 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1262 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L2227/323
Abstract: A pixel structure including a substrate, a power wire, a planarization layer, a drive circuit and a conductive structure is provided. The substrate has a layout area and a light-transmitting area located outside the layout area. The power wire is disposed on the layout area of the substrate. The power wire includes a shielding layer. The planarization layer is disposed on the substrate and covers the power wire. The drive circuit is disposed on the planarization layer and corresponds to the layout area. The drive circuit includes a first active device. The shielding layer overlaps with the first active device. The conductive structure is disposed in the planarization layer and distributed corresponding to the layout area. The power wire is electrically connected with the drive circuit through the conductive structure. A display panel is also provided.
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公开(公告)号:US10083989B2
公开(公告)日:2018-09-25
申请号:US15209780
申请日:2016-07-14
Applicant: Industrial Technology Research Institute
Inventor: Tai-Jui Wang , Tsu-Chiang Chang , Yu-Hua Chung , Wei-Han Chen , Hsiao-Chiang Yao
IPC: H01L29/786 , H01L27/12
CPC classification number: H01L27/1218 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L29/78603 , H01L29/78675
Abstract: A semiconductor device is provided to include a flexible substrate, a barrier layer, a heat insulating layer, a device layer, a dielectric material later and a stress absorbing layer. The barrier layer is disposed on the flexible substrate. The heat insulating layer is disposed on the barrier layer, wherein the heat insulating layer has a thermal conductivity of less than 20 W/mK. The device layer is disposed on the heat insulating layer. The dielectric material layer is disposed on the device layer, and the dielectric material layer and the heat insulating layer include at least one trench. The stress absorbing layer is disposed on the dielectric material layer, and the stress absorbing layer fills into the at least one trench.
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公开(公告)号:US10418435B2
公开(公告)日:2019-09-17
申请号:US15691755
申请日:2017-08-31
Inventor: Tai-Jui Wang , Chieh-Wei Feng , Meng-Jung Yang , Wei-Han Chen , Shao-An Yan , Tsu-Chiang Chang
Abstract: A pixel structure including a substrate, a power wire, a planarization layer, a drive circuit and a conductive structure is provided. The substrate has a layout area and a light-transmitting area located outside the layout area. The power wire is disposed on the layout area of the substrate. The power wire includes a shielding layer. The planarization layer is disposed on the substrate and covers the power wire. The drive circuit is disposed on the planarization layer and corresponds to the layout area. The drive circuit includes a first active device. The shielding layer overlaps with the first active device. The conductive structure is disposed in the planarization layer and distributed corresponding to the layout area. The power wire is electrically connected with the drive circuit through the conductive structure. A display panel is also provided.
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公开(公告)号:US09960245B1
公开(公告)日:2018-05-01
申请号:US15458984
申请日:2017-03-15
Applicant: Industrial Technology Research Institute
Inventor: Tai-Jui Wang , Tsu-Chiang Chang , Chieh-Wei Feng , Shao-An Yan , Wei-Han Chen
IPC: H01L29/76 , H01L29/423 , H01L29/786 , H01L29/66 , H01L29/417
CPC classification number: H01L29/42384 , H01L29/41733 , H01L29/66757 , H01L29/78675 , H01L29/78696
Abstract: A transistor device including a semiconductor material layer, a gate layer, and an insulation layer between the gate layer and the semiconductor material layer is provided. The semiconductor material layer includes a first conductive portion, a second conductive portion, a channel portion between the first conductive portion and the second conductive portion, and a first protruding portion formed integrally. The channel portion has a first boundary adjacent to the first conductive portion, a second boundary adjacent to the second conductive portion, a third boundary, and a fourth boundary. The third boundary and the fourth boundary connect the terminals of the first boundary and the second boundary. The first protruding portion is protruded outwardly from the third boundary of the channel portion. The first gate boundary and the second gate boundary are overlapped with the first boundary and the second boundary of the channel portion.
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