公开(公告)号：US20230207486A1

公开(公告)日：2023-06-29

申请号：US17561833

申请日：2021-12-24

Applicant: Intel Corporation

Inventor： Gwang-Soo Kim ,  Dimitrios Antartis ,  Han Ju Lee ,  Christopher Pelto

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/562 ,  H01L23/5226 ,  H01L23/53295 ,  H01L21/76802 ,  H01L21/76877

Abstract: An integrated circuit (IC) die comprises a first metallization layer comprising first interconnect structures which each extend through the first metallization layer, a second metallization layer comprising second interconnect structures which each extend through the second metallization layer, an interlayer dielectric (ILD) stack between the first metallization layer and the second metallization layer. The ILD stack comprises a stress modulation layer on the first metallization layer and a capping layer on the stress modulation layer. A first intrinsic stress in a first material of the stress modulation layer is to mitigate a second intrinsic stress in the first metallization layer.

公开(公告)号：US20250105207A1

公开(公告)日：2025-03-27

申请号：US18473046

申请日：2023-09-22

Applicant: Intel Corporation

Inventor： Omkar Karhade ,  Nitin Ashok Deshpande ,  Dimitrios Antartis ,  Gwang-Soo Kim ,  Shawna Marie Liff

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/48

Abstract: Systems, apparatus, and articles of manufacture are disclosed to enable integrated circuit packages with double hybrid bonded dies and methods of manufacturing the same include an integrated circuit (IC) package including a first semiconductor die including first metal vias spaced apart along a first layer of a first dielectric material, the first metal vias connected to respective first metal pads of the first semiconductor die, a second semiconductor die including second metal pads of the second semiconductor die, and a hybrid bond layer including a third dielectric material and third metal vias spaced apart along the third dielectric material, a subset of the third metal vias electrically coupling ones of the first metal pads to respective ones of the second metal pads, a first one of the third metal vias positioned beyond a lateral side of the first semiconductor die.

公开(公告)号：US20250006678A1

公开(公告)日：2025-01-02

申请号：US18345437

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Harini Kilambi ,  Kimin Jun ,  Adel A. Elsherbini ,  John Edward Zeug Matthiesen ,  Trianggono Widodo ,  Adita Das ,  Mohit Bhatia ,  Dimitrios Antartis ,  Bhaskar Jyoti Krishnatreya ,  Rajesh Surapaneni ,  Xavier Francois Brun

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/544 ,  H01L25/065

Abstract: Disclosed herein are microelectronic assemblies, related apparatuses, and methods. In some embodiments, a microelectronic assembly may include a first die in a first layer; and a second and third die in a second layer, the second layer coupled to the first layer by hybrid bond interconnects having a first pad and a second pad, wherein the first pad is coupled to a first via in the second die and the first pad is offset from the first via by a first dimension, and the second pad is coupled to a second via in the third die and the second pad is offset from the second via by a second dimension different than the first dimension. In some embodiments, the first pad is offset from the first via in a first direction and the second pad is offset from the second via in a second direction different than the first direction.

公开(公告)号：US20240006332A1

公开(公告)日：2024-01-04

申请号：US17856801

申请日：2022-07-01

Applicant: Intel Corporation

Inventor： Dimitrios Antartis ,  Nitin A. Deshpande ,  Siyan Dong ,  Omkar Karhade ,  Gwang-soo Kim ,  Shawna Liff ,  Siddhartha Mal ,  Debendra Mallik ,  Khant Minn ,  Haris Khan Niazi ,  Arnab Sarkar ,  Yi Shi ,  Botao Zhang

IPC: H01L23/544 ,  H01L23/00 ,  H01L23/48

CPC classification number: H01L23/544 ,  H01L24/08 ,  H01L23/481 ,  H01L2224/08145 ,  H01L2223/54426

Abstract: An integrated circuit (IC) device comprises a host component and an IC die directly bonded to the host component. The IC die comprises a substrate material layer and a die metallization level between the substrate material layer and host component. The IC die includes an upper die alignment fiducial between the die metallization level and host component. The upper die alignment fiducial at least partially overlaps one or more metallization features within the die metallization level. In embodiments, at least two orthogonal edges of the upper die alignment fiducial do not overlap any of the metallization features within the die metallization level. In embodiments, the IC die includes a lower die alignment fiducial between the substrate material layer and the die metallization level. The lower die alignment fiducial may at least partially overlap one or more second metallization features within a second die metallization level of the IC die.