公开(公告)号：US10121679B1

公开(公告)日：2018-11-06

申请号：US15721384

申请日：2017-09-29

申请人： Intel Corporation

发明人： Aleksandar Aleksov ,  Kristof Darmawikarta ,  Arnab Sarkar ,  Hiroki Tanaka ,  Robert A. May ,  Sri Ranga Sai Boyapati

IPC分类号： H01L23/532 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498

摘要： Embodiments of the present disclosure may relate to a package substrate that may include a layer having a layer surface that is planarized and a via within the layer, where the via includes a via surface that is exposed on the layer surface, and where the via surface is planarized. The package substrate may further include a bond pad on the layer surface, where a first thickness of the bond pad includes a seed layer on the via surface, and where a second thickness of the bond pad includes a plating stack on the seed layer. Other embodiments may be described or claimed.

公开(公告)号：US20230197637A1

公开(公告)日：2023-06-22

申请号：US17554471

申请日：2021-12-17

申请人： Intel Corporation

发明人： Debendra Mallik ,  Mohammad Enamul Kabir ,  Nitin Deshpande ,  Omkar Karhade ,  Arnab Sarkar ,  Sairam Agraharam ,  Christopher Pelto ,  Gwang-Soo Kim ,  Ravindranath Mahajan

IPC分类号： H01L23/00 ,  H01L25/065

CPC分类号： H01L23/564 ,  H01L25/0655 ,  H01L21/447

摘要： Stacked die assemblies having a moisture sealant layer according to embodiments are described herein. A microelectronic package structure having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die adjacent sidewalls of the second and the third dies, and adjacent an edge portion of the first die. The first layer comprises a diffusion barrier material A second layer is over the first layer, the second layer, wherein a top surface of the second layer is substantially coplanar with the top surfaces of the second and third dies. The first layer provides a hermetic moisture sealant layer for stacked die package structures.

公开(公告)号：US11676889B2

公开(公告)日：2023-06-13

申请号：US17573479

申请日：2022-01-11

申请人： Intel Corporation

发明人： Arnab Sarkar ,  Sujit Sharan ,  Dae-Woo Kim

IPC分类号： H01L23/498 ,  H01L23/544 ,  H01L21/66 ,  H01L23/58 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18

CPC分类号： H01L23/49827 ,  H01L22/32 ,  H01L23/544 ,  H01L23/585 ,  H01L24/10 ,  H01L25/0655 ,  H01L24/16 ,  H01L25/18 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2224/14 ,  H01L2224/16227 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/1517 ,  H01L2924/15192 ,  H01L2924/15313 ,  H01L2924/3512

摘要： Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure incudes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

公开(公告)号：US20200258827A1

公开(公告)日：2020-08-13

申请号：US16641219

申请日：2017-09-29

申请人： INTEL CORPORATION

发明人： Aleksandar Aleksov ,  Veronica Strong ,  Kristof Darmawikarta ,  Arnab Sarkar

IPC分类号： H01L23/498 ,  H01L21/48 ,  H05K1/11 ,  H05K3/18

摘要： A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

公开(公告)号：US10418312B2

公开(公告)日：2019-09-17

申请号：US15749465

申请日：2015-10-29

申请人： Intel Corporation

发明人： Arnab Sarkar ,  Sujit Sharan ,  Dae-Woo Kim

IPC分类号： H01L23/498 ,  H01L23/544 ,  H01L21/66 ,  H01L23/58 ,  H01L25/065 ,  H01L23/00 ,  H01L25/18

摘要： Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

公开(公告)号：US20220084927A1

公开(公告)日：2022-03-17

申请号：US17536711

申请日：2021-11-29

申请人： INTEL CORPORATION

发明人： Aleksandar Aleksov ,  Veronica Strong ,  Kristof Darmawikarta ,  Arnab Sarkar

IPC分类号： H01L23/498 ,  H01L21/48 ,  H05K1/11 ,  H05K3/18

摘要： A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

公开(公告)号：US10475736B2

公开(公告)日：2019-11-12

申请号：US15718012

申请日：2017-09-28

申请人： Intel Corporation

发明人： Aleksandar Aleksov ,  Arnab Sarkar ,  Arghya Sain ,  Kristof Darmawikarta ,  Henning Braunisch ,  Prashant D. Parmar ,  Sujit Sharan ,  Johanna M. Swan ,  Feras Eid

IPC分类号： H01L23/50 ,  H01L21/48 ,  H01L23/498 ,  G06F17/50 ,  H01L23/522 ,  H01L23/528 ,  H01L23/00

摘要： Aspects of the embodiments are directed to an IC chip that includes a substrate comprising a first metal layer, a second metal layer, and a ground plane residing on the first metal layer. The second metal layer can include a first signal trace, the first signal trace electrically coupled to a first signal pad residing in the first metal layer by a first signal via. The second metal layer can include a second signal trace, the second signal trace electrically coupled to a second signal pad residing in the first metal layer by a second signal via. The substrate can also include a ground trace residing in the second metal layer between the first signal trace and the second signal trace, the ground trace electrically coupled to the ground plane by a ground via. The vias coupled to the traces can include self-aligned or zero-misaligned vias.

公开(公告)号：US11728258B2

公开(公告)日：2023-08-15

申请号：US17536711

申请日：2021-11-29

申请人： INTEL CORPORATION

发明人： Aleksandar Aleksov ,  Veronica Strong ,  Kristof Darmawikarta ,  Arnab Sarkar

IPC分类号： H05K1/02 ,  H05K1/03 ,  H05K1/09 ,  H05K3/02 ,  H05K3/06 ,  H05K3/07 ,  H05K3/10 ,  H01L21/00 ,  H01L21/48 ,  H01L23/00 ,  H01L23/48 ,  H01L23/498 ,  H05K1/11 ,  H05K3/18

CPC分类号： H01L23/49827 ,  H01L21/486 ,  H01L23/49866 ,  H05K1/113 ,  H05K3/184 ,  H05K2201/0379 ,  H05K2203/0565

摘要： A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

公开(公告)号：US11264338B2

公开(公告)日：2022-03-01

申请号：US15934191

申请日：2018-03-23

申请人： Intel Corporation

发明人： Ananth Prabhakumar ,  Krishna Srinivasan ,  Arnab Sarkar

IPC分类号： H01L23/00 ,  H01L23/525 ,  H01L23/498 ,  H01L23/64

摘要： Apparatuses, systems and methods associated with over void signal trace design are disclosed herein. In embodiments, an integrated circuit (IC) package may include a first layer that has a void and a guard trace, wherein a first portion of the void is located on a first side of the guard trace and a second portion of the void is located on a second side of the guard trace. The IC package may further include a second layer located adjacent to the first layer, wherein the second layer has a signal trace that extends along the guard trace. Other embodiments may be described and/or claimed.

公开(公告)号：US20240006332A1

公开(公告)日：2024-01-04

申请号：US17856801

申请日：2022-07-01

申请人： Intel Corporation

发明人： Dimitrios Antartis ,  Nitin A. Deshpande ,  Siyan Dong ,  Omkar Karhade ,  Gwang-soo Kim ,  Shawna Liff ,  Siddhartha Mal ,  Debendra Mallik ,  Khant Minn ,  Haris Khan Niazi ,  Arnab Sarkar ,  Yi Shi ,  Botao Zhang

IPC分类号： H01L23/544 ,  H01L23/00 ,  H01L23/48

CPC分类号： H01L23/544 ,  H01L24/08 ,  H01L23/481 ,  H01L2224/08145 ,  H01L2223/54426

摘要： An integrated circuit (IC) device comprises a host component and an IC die directly bonded to the host component. The IC die comprises a substrate material layer and a die metallization level between the substrate material layer and host component. The IC die includes an upper die alignment fiducial between the die metallization level and host component. The upper die alignment fiducial at least partially overlaps one or more metallization features within the die metallization level. In embodiments, at least two orthogonal edges of the upper die alignment fiducial do not overlap any of the metallization features within the die metallization level. In embodiments, the IC die includes a lower die alignment fiducial between the substrate material layer and the die metallization level. The lower die alignment fiducial may at least partially overlap one or more second metallization features within a second die metallization level of the IC die.