公开(公告)号：US20160079138A1

公开(公告)日：2016-03-17

申请号：US14852855

申请日：2015-09-14

Applicant: Invensas Corporation

Inventor： Cyprian UZOH ,  Rajesh KATKAR

IPC: H01L23/31 ,  H01L21/3213 ,  H01L21/822 ,  H01L23/29 ,  H01L23/498 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L24/97 ,  H01L21/32133 ,  H01L21/486 ,  H01L21/561 ,  H01L21/822 ,  H01L23/147 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L25/072 ,  H01L25/115 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32013 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81007 ,  H01L2224/83007 ,  H01L2224/83192 ,  H01L2224/97 ,  H01L2924/07025 ,  H01L2924/15192 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Integrated circuits (ICs 110) are attached to a wafer (120W). A stabilization layer (404) is formed over the wafer to strengthen the structure for further processing. Unlike a conventional mold compound, the stabilization layer is separated from at least some wafer areas around the ICs by one or more gap regions (450) to reduce the thermo-mechanical stress on the wafer and hence the wafer warpage. Alternatively or in addition, the stabilization layer can be a porous material having a low horizontal elastic modulus to reduce the wafer warpage, but having a high flexural modulus to reduce warpage and otherwise strengthen the structure for further processing. Other features and advantages are also provided.

Abstract translation: 集成电路（IC 110）附接到晶片（120W）。 在晶片上形成稳定层（404），以加强用于进一步处理的结构。 与传统的模制化合物不同，通过一个或多个间隙区域（450）将稳定层与IC周围的至少一些晶片区域分离，以减少晶片上的热机械应力，从而降低晶片翘曲。 或者或另外，稳定层可以是具有低水平弹性模量的多孔材料，以减少晶片翘曲，但是具有高挠曲模量以减少翘曲，否则加强用于进一步加工的结构。 还提供了其他特点和优点。