Abstract:
The invention provides a photosensitive device with locally adjustable exposure time, wherein means provide local modification of the integration time, for some detectors, as a function of the lighting received by each detector. In FIG. 1, these means are formed by a shift register with a series input and parallel outputs, by MOS transistors and by charge removal diodes.
Abstract:
A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.
Abstract:
The charges induced by the light image to be scanned are integrated cyclically. During each integration cycle, the total amplitude of the signal corresponding to said image is calculated. The calculated amplitude is compared with a threshold amplitude value which is a function of a saturation value which is itself fixed by the amplitude of a periodic bias voltage applied to the device. The amplitude of the potential wells created by said bias voltage is modulated as a function of the result of said comparison. The invention is applicable to solid state TV cameras, e.g. for use in low light.
Abstract:
A matrix photodetector includes, for example, at the bottom of the memory zone, an ancillary zone with a region having an implantation of a type opposite to that of the substrate, parallel to the transfer channels and followed by a region for the passage of the charges, located so as to be an extension of the tranfer channels, and surmounted by an ancillary gate capable of receiving low or high ancillary control signals to apply, to the passage region, low or high ancillary potential levels, which are respectively smaller, in terms of absolute value, than the levels of low or high potentials produced by the other gates, thus enabling a first filtering of the charges to be done before they are transferred into the read-out butter, in removing unwanted charges to an anti-blooming device, notably of the type with insulating zone.
Abstract:
A gate structure for integrated circuits and more especially for photosensitive charge-transfer devices comprises elements of the gate-insulator-semiconductor type. The gate structure is constituted by a thin film-layer of transparent or semi-transparent conductive material covered with a layer of compatible insulating material having a refractive index higher than 1.5.
Abstract:
A process of detecting bar codes constituted by bars having a height H and a width D and presenting flaws of a height A, which comprises the steps of summing the signals issuing from detectors of identical rank which belong to at least two rows of N detectors having a spacing pitch smaller than or equal to D/2, said rows being perpendicular to said codes so that at least one of the distances between said rows is greater than A, and comparing the sum signal thus obtained to a decision threshold to obtain a "code present" or "code absent" signal while eliminating any flaws possibly present in said codes.