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    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
    2.
    发明授权
    Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output 有权
    具有E.S.C.反馈控制的双偏压等离子体反应器 电压使用晶圆电压测量在偏置电源输出

    公开(公告)号：US07359177B2

    公开(公告)日：2008-04-15

    申请号：US11127036

    申请日：2005-05-10

    申请人： Jang Gyoo Yang ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas H. Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    发明人： Jang Gyoo Yang ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas H. Burns ,  Wonseok Lee ,  Kwang-Soo Kim

    IPC分类号： H01L21/683 ,  H01T23/00 ,  G01L21/30 ,  G01R31/00 ,  H01J7/24 ,  H05B31/26 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01J37/32706 ,  H01J37/32935 ,  H01L21/6833 ,  Y10T279/23

    摘要： A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply and an output end coupled to the wafer support pedestal, and sensor circuits providing measurement signals representing first and second frequency components of a measured voltage and first and second frequency components of a measured current near the input end of the RF power path. The reactor further includes a processor for providing first and second frequency components of a wafer voltage signal as, respectively, a first sum of the first frequency components of the measured voltage and measured current multiplied by first and second coefficients respectively, and a second sum of the second frequency components of the measured voltage and measured current multiplied by third and fourth coefficients, respectively. A processor produces a D.C. wafer voltage by combining D.C. components of the first and second frequency components of the wafer voltage with an intermodulation correction factor that is the product of the D.C. components of the first and second components of the wafer voltage raised to a selected power and multiplied by a selected coefficient.

    摘要翻译： 等离子体反应器具有双频等离子体RF偏压电源，其分别提供包括第一和第二频率分量f（1），f（2）的RF偏置功率，以及具有耦合到等离子体RF偏置的输入端的RF功率路径 电源和耦合到晶片支撑基座的输出端，以及传感器电路，其提供表示测量电压的第一和第二频率分量以及在RF功率路径的输入端附近的测量电流的第一和第二频率分量的测量信号。 反应器还包括处理器，用于分别提供晶片电压信号的第一和第二频率分量，分别为测量电压的第一频率分量和测量电流乘以第一和第二系数的第一和，以及第二和 测量电压和测量电流的第二频率分量分别乘以第三和第四系数。 处理器通过将晶片电压的第一和第二频率分量的DC分量与作为晶片电压的第一和第二分量的DC分量升高到所选功率的互调校正因子相结合来产生DC晶片电压 并乘以所选系数。

    Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields
    4.
    发明申请
    Method of controlling plasma distribution uniformity by superposition of different constant solenoid fields 审中-公开
    通过叠加不同恒定电磁场控制等离子体分布均匀性的方法

    公开(公告)号：US20090250335A1

    公开(公告)日：2009-10-08

    申请号：US12082097

    申请日：2008-04-07

    申请人： Daniel J. Hoffman ,  Ezra Robert Gold ,  Douglas H. Burns ,  Douglas A. Buchberger, JR. ,  Michael Charles Kutney ,  Jang Gyoo Yang

    发明人： Daniel J. Hoffman ,  Ezra Robert Gold ,  Douglas H. Burns ,  Douglas A. Buchberger, JR. ,  Michael Charles Kutney ,  Jang Gyoo Yang

    IPC分类号： H05H1/24

    CPC分类号： H05H1/46 ,  H01J37/32091 ,  H01J37/32706

    摘要： A method for processing a workpiece in a plasma reactor having a set of n coils includes constructing, for each one of the n coils, a set of plasma distributions for discrete values of coil current in a predetermined current range. The distributions are grouped, each group having one distribution for each of the n coils, and being a unique set of n distributions. A combined plasma distribution is computed from each group of distributions. The variance of each combined distribution is computed. The method further includes finding an optimum one of the combined distributions having an at least nearly minimum variance, and identifying the n coil currents associated with the optimum distribution. During plasma processing of the workpiece, currents through the coils are maintained at levels corresponding to the n coil currents associated with the one combined distribution.

    摘要翻译： 一种用于处理具有一组n个线圈的等离子体电抗器中的工件的方法包括为n个线圈中的每个线圈构建用于在预定电流范围内的线圈电流的离散值的一组等离子体分布。 分布分组，每组具有n个线圈中的每一个的一个分布，并且是n个分布的唯一集合。 从每组分布计算组合等离子体分布。 计算每个组合分布的方差。 该方法还包括找到具有至少接近最小方差的组合分布中的最佳一个，并且识别与最佳分布相关联的n个线圈电流。 在工件的等离子体处理期间，通过线圈的电流保持在与一个组合分布相关联的n个线圈电流的水平。

    APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION
    5.
    发明申请
    APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION 有权
    多种频率功率应用的设备

    公开(公告)号：US20110291771A1

    公开(公告)日：2011-12-01

    申请号：US13205933

    申请日：2011-08-09

    申请人： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

    发明人： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

    IPC分类号： H03H7/40 ,  H03H7/38

    CPC分类号： H03H7/38

    摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

    摘要翻译： 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

    Apparatus for multiple frequency power application
    6.
    发明授权
    Apparatus for multiple frequency power application 有权
    多频电源设备

    公开(公告)号：US07994872B2

    公开(公告)日：2011-08-09

    申请号：US12506658

    申请日：2009-07-21

    申请人： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

    发明人： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

    IPC分类号： H03H7/40

    CPC分类号： H03H7/38

    摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

    摘要翻译： 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

    Apparatus for multiple frequency power application
    7.
    发明授权
    Apparatus for multiple frequency power application 有权
    多频电源设备

    公开(公告)号：US08237517B2

    公开(公告)日：2012-08-07

    申请号：US13205933

    申请日：2011-08-09

    申请人： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

    发明人： Steven C. Shannon ,  Jang Gyoo Yang ,  Matthew L. Miller ,  Kartik Ramaswamy ,  James P. Cruse

    IPC分类号： H03H7/38

    CPC分类号： H03H7/38

    摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

    摘要翻译： 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。

    High density plasma gapfill deposition-etch-deposition process etchant
    8.
    发明授权
    High density plasma gapfill deposition-etch-deposition process etchant 失效
    高密度等离子体填隙沉积 - 蚀刻沉积工艺蚀刻剂

    公开(公告)号：US07972968B2

    公开(公告)日：2011-07-05

    申请号：US12193162

    申请日：2008-08-18

    申请人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    发明人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    IPC分类号： H01L21/461

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

    摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

    摘要翻译： 将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。 该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分， 的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。

    CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL
    9.
    发明申请
    CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
    具有磁性等离子体控制的电容耦合等离子体反应器

    公开(公告)号：US20110201134A1

    公开(公告)日：2011-08-18

    申请号：US13081005

    申请日：2011-04-06

    申请人： Daniel J. Hoffman ,  Matthew L. Miller ,  Jang Gyoo Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    发明人： Daniel J. Hoffman ,  Matthew L. Miller ,  Jang Gyoo Yang ,  Heeyeop Chae ,  Michael Barnes ,  Tetsuya Ishikawa ,  Yan Ye

    IPC分类号： H01L21/66 ,  H01L21/3065

    CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

    摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the side wall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

    摘要翻译： 等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域 支持和天花板。 工艺气体入口将工艺气体提供到腔室中。 等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。 反应器还包括至少第一架空螺线管电磁体，靠近天花板，架空螺线管电磁体，天花板，侧壁和工件支撑件沿着共同的对称轴线定位。 电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得 磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

    HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT
    10.
    发明申请
    HIGH DENSITY PLASMA GAPFILL DEPOSITION-ETCH-DEPOSITION PROCESS USING FLUOROCARBON ETCHANT 失效
    使用荧光探针的高密度等离子体吸附沉积 - 沉积沉积工艺

    公开(公告)号：US20100041207A1

    公开(公告)日：2010-02-18

    申请号：US12193162

    申请日：2008-08-18

    申请人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    发明人： Young S. Lee ,  Ying Rui ,  Dmitry Lubomirsky ,  Daniel J. Hoffman ,  Jang Gyoo Yang ,  Anchuan Wang

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76224 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31612

    摘要： A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.

    摘要翻译： 将介电膜沉积在设置在基板处理室中的基板上的相邻凸起结构之间的间隙中的高密度等离子体蚀刻/蚀刻/蚀刻方法。 该方法通过从流入处理室的第一气体混合物形成高密度等离子体，将电介质膜的第一部分沉积在间隙内，通过流过包含CxFy的蚀刻剂气体来蚀刻沉积的电介质膜的第一部分， 的x至y大于或等于1：2，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将第二部分电介质膜沉积在第一部分上。