公开(公告)号：US06856534B2

公开(公告)日：2005-02-15

申请号：US10260467

申请日：2002-09-30

Applicant: John Anthony Rodriguez ,  K. R. Udayakumar

Inventor： John Anthony Rodriguez ,  K. R. Udayakumar

IPC: G11C11/22 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/105 ,  G11C7/00

CPC classification number: G11C11/5657 ,  G11C11/22 ,  G11C2211/5641

Abstract: Apparatus and methods are described for a multi-level FeRAM memory device. Using write and read circuits associated with the memory device, multiple data states may be written to and read from the ferroelectric memory device which are associated with a single polarization direction, thereby allowing for a single cell to contain more than one bit of data.

Abstract translation: 描述了用于多级FeRAM存储器件的装置和方法。 使用与存储器件相关联的写入和读取电路，可以将多个数据状态写入到与单个极化方向相关联的铁电存储器件并从其读取，从而允许单个单元包含多于一个位的数据。

公开(公告)号：US06982448B2

公开(公告)日：2006-01-03

申请号：US10803445

申请日：2004-03-18

Applicant: K. R. Udayakumar ,  Theodore S. Moise ,  Scott R. Summerfelt

Inventor： K. R. Udayakumar ,  Theodore S. Moise ,  Scott R. Summerfelt

IPC: H01L29/76 ,  H01L29/94

CPC classification number: H01L27/11507 ,  H01L28/57

Abstract: Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (CFE) from hydrogen diffusion in semiconductor devices (102), wherein nitrided aluminum oxide (N—AlOx) is formed over a ferroelectric capacitor (CFE), and one or more silicon nitride layers (112, 117) are formed over the nitrided aluminum oxide (N—AlOx). Hydrogen barriers are also provided in which an aluminum oxide (AlOx, N—AlOx) is formed over the ferroelectric capacitors (CFE), with two or more silicon nitride layers (112, 117) formed over the aluminum oxide (AlOx, N—AlOx), wherein the second silicon nitride layer (112) comprises a low silicon-hydrogen SiN material.

Abstract translation: 提供了氢屏障和制造方法，用于保护铁电电容器（CFE）在半导体器件（102）中的氢扩散，其中氮化的氧化铝（N-AlO x X）为 形成在铁电电容器（CFE）上，并且在氮化的氧化铝（N-AlO x N）上形成一个或多个氮化硅层（112,117）。 还提供了氢屏障，其中在铁电电容器（C FE）上形成氧化铝（AlO x N，N-AlO x x） ，其上形成有氧化铝（AlO x N，N-AlO x）上的两个或更多个氮化硅层（112,117），其中第二氮化硅层（112 ）包括低硅氢SiN材料。

公开(公告)号：US07183602B2

公开(公告)日：2007-02-27

申请号：US11033224

申请日：2005-01-11

Applicant: K. R. Udayakumar ,  Theodore S. Moise ,  Scott R. Summerfelt

Inventor： K. R. Udayakumar ,  Theodore S. Moise ,  Scott R. Summerfelt

IPC: H01L29/76 ,  H01L29/94

CPC classification number: H01L27/11507 ,  H01L28/57

Abstract: Hydrogen barriers and fabrication methods are provided for protecting ferroelectric capacitors (CFE) from hydrogen diffusion in semiconductor devices (102), wherein nitrided aluminum oxide (N—AlOx) is formed over a ferroelectric capacitor (CFE), and one or more silicon nitride layers (112, 117) are formed over the nitrided aluminum oxide (N—AlOx). Hydrogen barriers are also provided in which an aluminum oxide (AlOx, N—AlOx) is formed over the ferroelectric capacitors (CFE), with two or more silicon nitride layers (112, 117) formed over the aluminum oxide (AlOx, N—AlOx), wherein the second silicon nitride layer (112) comprises a low silicon-hydrogen SiN material.

Abstract translation: 提供氢屏障和制造方法用于在半导体器件（102）中保护铁电电容器（C LIMIT）免受氢扩散，其中氮化的氧化铝（N-AlOx）形成在铁电电容器（C < 在氮化的氧化铝（N-AlOx）上形成一个或多个氮化硅层（112,117）。 还提供了氢屏障，其中在铁电电容器（CFE）上形成氧化铝（AlOx，N-AlOx），其上形成有两个或更多个氮化硅层（112,117） 氧化铝（AlOx，N-AlOx），其中第二氮化硅层（112）包括低硅氢SiN材料。

公开(公告)号：US06984857B2

公开(公告)日：2006-01-10

申请号：US10620516

申请日：2003-07-16

Applicant: K. R. Udayakumar ,  Martin G. Albrecht ,  Theodore S. Moise, IV ,  Scott R. Summerfelt ,  Sanjeev Aggarwal ,  Jeff L. Large

Inventor： K. R. Udayakumar ,  Martin G. Albrecht ,  Theodore S. Moise, IV ,  Scott R. Summerfelt ,  Sanjeev Aggarwal ,  Jeff L. Large

IPC: H01L29/76

CPC classification number: H01L28/57 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and fabrication methods are presented, in which a hydrogen barrier is provided above a ferroelectric capacitor to prevent degradation of the ferroelectric material during back-end manufacturing processes employing hydrogen. The hydrogen barrier comprises silicon rich silicon oxide or amorphous silicon, which can be used in combination with an aluminum oxide layer to inhibit diffusion of process-related hydrogen into the ferroelectric capacitor layer.

Abstract translation: 提出了半导体器件和制造方法，其中在铁电电容器上方设置氢气阻挡层，以防止在使用氢的后端制造工艺期间铁电材料的劣化。 氢势垒包括富硅氧化物或非晶硅，其可以与氧化铝层组合使用以抑制工艺相关氢扩散到铁电电容器层中。

公开(公告)号：US06876021B2

公开(公告)日：2005-04-05

申请号：US10303560

申请日：2002-11-25

Applicant: J. Scott Martin ,  Scott R. Summerfelt ,  Theodore S. Moise ,  Kelly J. Taylor ,  Luigi Colombo ,  Sanjeev Aggarwal ,  Sirisha Kuchimanchi ,  K. R. Udayakumar ,  Lindsey Hall

Inventor： J. Scott Martin ,  Scott R. Summerfelt ,  Theodore S. Moise ,  Kelly J. Taylor ,  Luigi Colombo ,  Sanjeev Aggarwal ,  Sirisha Kuchimanchi ,  K. R. Udayakumar ,  Lindsey Hall

IPC: H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  H01L31/119

CPC classification number: H01L27/11502 ,  H01L27/11507 ,  H01L28/55

Abstract: The present invention forms sidewall diffusion barrier layer(s) that mitigate hydrogen contamination of ferroelectric capacitors. Sidewall diffusion barrier layer(s) of the present invention are formed via a physical vapor deposition process at a low temperature. By so doing, the sidewall diffusion barrier layer(s) are substantially amorphous and provide superior protection against hydrogen diffusion than conventional and/or crystalline sidewall diffusion barrier layers.

Abstract translation: 本发明形成减轻铁电电容器的氢污染的侧壁扩散阻挡层。 本发明的侧壁扩散阻挡层通过物理气相沉积工艺在低温下形成。 通过这样做，侧壁扩散阻挡层基本上是无定形的，并提供优于常规和/或结晶侧壁扩散阻挡层的氢气扩散保护。

公开(公告)号：US07019352B2

公开(公告)日：2006-03-28

申请号：US10635994

申请日：2003-08-07

Applicant: K. R. Udayakumar ,  Martin G. Albrecht ,  Theodore S. Moise ,  Scott R. Summerfelt ,  Sarah I. Hartwig

Inventor： K. R. Udayakumar ,  Martin G. Albrecht ,  Theodore S. Moise ,  Scott R. Summerfelt ,  Sarah I. Hartwig

IPC: H01L27/01

CPC classification number: H01L21/76829 ,  H01L21/3185 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76834 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57

Abstract: Semiconductor devices and fabrication methods are disclosed, in which one or more low silicon-hydrogen SiN barriers are provided to inhibit hydrogen diffusion into ferroelectric capacitors and into transistor gate dielectric interface areas. The barriers may be used as etch stop layers in various levels of the semiconductor device structure above and/or below the level at which the ferroelectric capacitors are formed so as to reduce the hydrogen related degradation of the switched polarization properties of the ferroelectric capacitors and to reduce negative bias temperature instability in the device transistors.

Abstract translation: 公开了半导体器件和制造方法，其中提供一个或多个低硅氢SiN栅极以阻止氢扩散到铁电电容器中并进入晶体管栅极电介质界面区域。 可以将阻挡层用作在形成强电介质电容器的电平以上和/或以下的半导体器件结构的各种级别的蚀刻停止层，以便降低铁电电容器的开关极化特性的氢相关劣化，并且 降低器件晶体管的负偏压温度不稳定性。

公开(公告)号：US06841396B2

公开(公告)日：2005-01-11

申请号：US10440697

申请日：2003-05-19

Applicant: Francis Gabriel Celii ,  K. R. Udayakumar ,  Scott R. Summerfelt ,  Theodore S. Moise

Inventor： Francis Gabriel Celii ,  K. R. Udayakumar ,  Scott R. Summerfelt ,  Theodore S. Moise

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115

CPC classification number: H01L27/11502 ,  H01L27/11507

Abstract: A ferroelectric memory device comprises a logic programmable capacitance reference circuit. The circuit is adapted to generate a reference voltage during a sense mode of operation, wherein the reference voltage comprises a value that is a function of one more memory conditions. The memory device further comprises a bit line pair, wherein a first bit line of the bit line pair has a ferroelectric capacitor coupled thereof for sensing thereof, and a second bit line of the bit line pair is coupled to the reference voltage. A sense circuit is coupled to the bit line pair and is configured to detect a data state associated with the ferroelectric capacitor using a voltage associated with the first bit line and reference voltage on the second bit line.

Abstract translation: 铁电存储器件包括逻辑可编程电容参考电路。 电路适于在感测操作模式期间产生参考电压，其中参考电压包括作为一个以上存储器条件的函数的值。 存储器件还包括位线对，其中位线对的第一位线具有耦合的铁电电容器用于感测位线对，并且位线对的第二位线耦合到参考电压。 感测电路耦合到位线对，并且被配置为使用与第一位线相关联的电压和第二位线上的参考电压来检测与铁电电容器相关联的数据状态。