公开(公告)号：US20060014863A1

公开(公告)日：2006-01-19

申请号：US10520571

申请日：2002-09-30

申请人： Jong Cheol Lim ,  Sam Yang

发明人： Jong Cheol Lim ,  Sam Yang

IPC分类号： C08K5/49

CPC分类号： C08K5/523 ,  C08L27/12 ,  C08L51/04 ,  C08L69/00 ,  C08L2666/02

摘要： The flame retardant thermoplastic resin composition of the present invention comprises (A) 45˜95 parts by weight of a thermoplastic polycarbonate resin; (B) 1˜50 parts by weight of a vinyl graft copolymer; (C) 0˜50 parts by weight of a vinyl copolymer or a mixture of vinyl copolymers; (D) 1˜30 parts by weight of a mixture of organic phosphorous compounds consisting of (D-1) 5˜95 parts by weight of a monomeric phosphoric acid ester compound or a mixture of monomeric phosphoric acid ester compounds and (D-2) 95˜5 parts by weight of an oligomeric phosphoric acid ester compound or a mixture of oligomeric phosphoric acid ester compounds, per 100 parts by weight of the sum of (A), (B) and (C); and (E) 0.05˜5 parts by weight of a fluorinated polyolefin resin per 100 parts by weight of the sum of (A), (B) and (C).

摘要翻译： 本发明的阻燃热塑性树脂组合物包含（A）45〜95重量份的热塑性聚碳酸酯树脂; （B）1〜50重量份的乙烯基接枝共聚物; （C）0〜50重量份的乙烯基共聚物或乙烯基共聚物的混合物; （D）1〜30重量份由（D-1）5-95重量份单体磷酸酯化合物或单体磷酸酯化合物和（D-2）的混合物组成的有机磷化合物的混合物 ）95〜5重量份低聚磷酸酯化合物或低聚磷酸酯化合物的混合物，相对于（A），（B）和（C）的总和为100重量份。 和（E）每100重量份（A），（B）和（C）的总和为0.05〜5重量份的氟化聚烯烃树脂。

公开(公告)号：US08471908B2

公开(公告)日：2013-06-25

申请号：US12906387

申请日：2010-10-18

申请人： Torsten Kanning ,  Peter G. Diehl ,  Sam Yang

发明人： Torsten Kanning ,  Peter G. Diehl ,  Sam Yang

IPC分类号： H04N7/18

CPC分类号： B60R1/12 ,  B60R2001/1253 ,  B60R2300/107 ,  H04N13/139 ,  H04N13/239 ,  H04N13/31

摘要： A display system for a vehicle includes a first camera and a second camera adapted to be mounted to the vehicle. A mirror assembly is provided having a display screen and a view divider such as a parallax barrier. A controller is operatively connected to the cameras and to the display screen and is operable to cause the recorded images to appear as a single three-dimensional image when the images are viewed through the view divider. A method of providing an image of an object that is rearward of a vehicle is also provided.

摘要翻译： 车辆的显示系统包括适于安装到车辆的第一照相机和第二照相机。 提供具有显示屏和诸如视差屏障的分视器的镜组件。 控制器可操作地连接到相机和显示屏幕，并且当通过视野分割器观看图像时，可操作地使得所记录的图像作为单个三维图像出现。 还提供了一种提供车辆后方的物体的图像的方法。

公开(公告)号：US20080057663A1

公开(公告)日：2008-03-06

申请号：US11932512

申请日：2007-10-31

申请人： Sam Yang

发明人： Sam Yang

IPC分类号： H01L21/20

CPC分类号： H01L27/10805 ,  G11C11/404 ,  G11C2211/4016 ,  H01L21/76895 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/91 ,  Y10S257/906 ,  Y10S438/957

摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

公开(公告)号：US07253076B1

公开(公告)日：2007-08-07

申请号：US09590795

申请日：2000-06-08

申请人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

发明人： Vishnu K. Agarwal ,  Garo Derderian ,  Gurtej S. Sandhu ,  Weimin M. Li ,  Mark Visokay ,  Cem Basceri ,  Sam Yang

IPC分类号： H01L21/20

CPC分类号： H01L28/84 ,  H01L21/31637 ,  H01L28/55 ,  H01L28/65

摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

摘要翻译： 具有增加的电容的电容器包括增强的表面积（粗糙表面）导电层或与高介电常数材料相容的其它层。 在一种方法中，用于这种电容器的增强表面积导电层是通过在高温或高于500℃，低压75托或更低，最理想的5托或更低的高温下处理氧化钌层形成的， 产生具有至少约100埃的平均特征尺寸的纹理表面的粗糙钌层。 初始氧化钌层可以通过化学气相沉积技术或溅射技术等来提供。 该层可以形成在下面的导电层上。 处理可以在惰性环境或还原环境中进行。 可以在处理期间或之后使用供氮环境或供氮还原环境以钝化钌以改善与高介电常数电介质材料的相容性。 氧化环境中的处理也可以进行以钝化粗糙层。 可以使用粗糙化的钌层来形成增强表面积的导电层。 所形成的增强表面积导电层可以在诸如DRAM等的存储单元中的集成电路中形成存储电容器的板。 在另一种方法中，提供氮化钨层作为这种电容器的第一电极。 电容器或至少氮化钨层被退火以增加电容器的电容。

公开(公告)号：US07192828B2

公开(公告)日：2007-03-20

申请号：US10819420

申请日：2004-04-07

申请人： Cem Basceri ,  Gurtej S. Sandhu ,  Sam Yang

发明人： Cem Basceri ,  Gurtej S. Sandhu ,  Sam Yang

IPC分类号： H01L21/8242

CPC分类号： H01L28/75 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31604 ,  H01L21/31683 ,  H01L27/10811 ,  H01L28/55

摘要： A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.

摘要翻译： 提供了使用非氧化物电极和高介电常数氧化物电介质材料的稳定电容器以及制造这种电容器并将其并入DRAM单元的方法。 优选的方法包括提供非氧化物电极，氧化非氧化物电极的上表面，在非氧化物电极的氧化表面上沉积高介电常数氧化物电介质材料，以及在高电极上沉积上层电极 介电常数氧化物介电材料。

公开(公告)号：US06664583B2

公开(公告)日：2003-12-16

申请号：US09997920

申请日：2001-11-30

申请人： Sam Yang ,  Vishnu K. Agarwal

发明人： Sam Yang ,  Vishnu K. Agarwal

IPC分类号： H01L27108

CPC分类号： H01L28/56 ,  H01L27/10852 ,  H01L28/75

摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

公开(公告)号：US06586796B2

公开(公告)日：2003-07-01

申请号：US10115340

申请日：2002-04-02

申请人： Cem Basceri ,  Gurtej S. Sandhu ,  Sam Yang

发明人： Cem Basceri ,  Gurtej S. Sandhu ,  Sam Yang

IPC分类号： H01L31119

CPC分类号： H01L28/75 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/31604 ,  H01L21/31683 ,  H01L27/10811 ,  H01L28/55

摘要： A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials is provided. The stabilized capacitor comprises a non-oxide electrode with an oxidized upper surface. A high dielectric constant oxide dielectric material is adjacent to the oxidized upper surface of the non-oxide electrode. An upper layer electrode is adjacent to the high dielectric constant oxide dielectric material.

摘要翻译： 提供了使用非氧化物电极和高介电常数氧化物介电材料的稳定电容器。 稳定电容器包括具有氧化的上表面的非氧化物电极。 高介电常数氧化物介电材料与非氧化物电极的氧化的上表面相邻。 上层电极与高介电常数氧化物电介质材料相邻。

公开(公告)号：US20080064179A1

公开(公告)日：2008-03-13

申请号：US11932677

申请日：2007-10-31

申请人： Sam Yang

发明人： Sam Yang

IPC分类号： H01L21/20

CPC分类号： H01L27/10805 ,  G11C11/404 ,  G11C2211/4016 ,  H01L21/76895 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/91 ,  Y10S257/906 ,  Y10S438/957

摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

公开(公告)号：US20080057664A1

公开(公告)日：2008-03-06

申请号：US11932551

申请日：2007-10-31

申请人： Sam Yang

发明人： Sam Yang

IPC分类号： H01L21/20

CPC分类号： H01L27/10805 ,  G11C11/404 ,  G11C2211/4016 ,  H01L21/76895 ,  H01L27/10852 ,  H01L28/56 ,  H01L28/91 ,  Y10S257/906 ,  Y10S438/957

摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

摘要翻译： 用于集成电路的电容器结构及其制造方法。 电容器结构包括底电极，顶电极和置于底电极和顶电极之间的电介质层。 电容器结构还包括置于电介质层和底电极和顶电极中的至少一个之间的金属氧化物缓冲层。 每个金属氧化物缓冲层起着改善电容和减少电容器泄漏的作用。 这些电容器适用于作为存储单元和并入这种存储单元的装置以及其他集成电路。

公开(公告)号：US07002202B2

公开(公告)日：2006-02-21

申请号：US10688823

申请日：2003-10-17

申请人： Sam Yang ,  Vishnu K. Agarwal

发明人： Sam Yang ,  Vishnu K. Agarwal

IPC分类号： H01L27/108

CPC分类号： H01L28/56 ,  H01L27/10852 ,  H01L28/75

摘要： Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.