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    Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium
    3.
    发明授权
    Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium 有权
    具有含有钪的底层和侧壁层的磁阻效应元件

    公开(公告)号：US09508926B2

    公开(公告)日：2016-11-29

    申请号：US14637254

    申请日：2015-03-03

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa ,  Minoru Amano ,  Megumi Yakabe ,  Hiroaki Maekawa

    IPC分类号： H01L43/02 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12 ,  H01L43/00 ,  H01L43/10 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.

    摘要翻译： 磁阻效应元件包括具有磁各向异性和可变磁化方向的记录层，具有磁各向异性和不变磁化方向的参考层，记录层和参考层之间的中间层，含有钪（Sc）的底层， 在记录层的与设置有记录层的表面侧相反的表面侧，以及包含Sc的氧化物并设置在记录层和中间层的侧表面上的侧壁层。

    Magnetic memory
    4.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US09230628B2

    公开(公告)日：2016-01-05

    申请号：US14198982

    申请日：2014-03-06

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Naoharu Shimomura ,  Eiji Kitagawa ,  Minoru Amano ,  Daisuke Saida ,  Kay Yakushiji ,  Takayuki Nozaki ,  Shinji Yuasa ,  Akio Fukushima ,  Hiroshi Imamura ,  Hitoshi Kubota

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/155 ,  H01F10/32 ,  H01F10/12

    CPC分类号： G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    摘要： A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

    摘要翻译： 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

    Magnetoresistive element using specific underlayer material
    5.
    发明授权
    Magnetoresistive element using specific underlayer material 有权
    使用特殊底层材料的磁阻元件

    公开(公告)号：US09178133B2

    公开(公告)日：2015-11-03

    申请号：US14160419

    申请日：2014-01-21

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa ,  Tadashi Kai ,  Hiroaki Yoda

    IPC分类号： H01L43/10 ,  H01F10/08 ,  G11C11/16 ,  H01L43/08 ,  H01F10/30 ,  H01F10/32 ,  G01R33/09

    CPC分类号： H01L43/08 ,  G01R33/091 ,  G01R33/093 ,  G01R33/098 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3286 ,  H01L43/10

    摘要： According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.

    摘要翻译： 根据一个实施例，磁阻元件包括具有垂直于膜表面并且具有可变磁化方向的磁各向异性的记录层，具有垂直于膜表面的磁各向异性且具有不变磁化方向的参考层， 记录层和参考层，以及包含AlTiN的底层，并设置在其上设置有中间层的记录层的表面的相反侧。

    Magnetic memory
    6.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US08937832B2

    公开(公告)日：2015-01-20

    申请号：US13621969

    申请日：2012-09-18

    申请人： Kabushiki Kaisha Toshiba

    发明人： Eiji Kitagawa ,  Daisuke Saida ,  Naoharu Shimomura

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/228

    摘要： According to one embodiment, a magnetic memory includes a magnetoresistive element. The element includes a first magnetic film having a variable magnetization perpendicular to a film surface, a second magnetic film having an invariable magnetization perpendicular to the film surface, a nonmagnetic film between the first and second magnetic films, a magnetic field application layer including a third magnetic film having a magnetization parallel to the film surface. The third magnetic film applies a magnetic field parallel to the film surface to the first magnetic film. A magnitude of the magnetization of the third magnetic film when supplying a read current is larger than a magnitude of the magnetization of the third magnetic film when supplying a write current.

    摘要翻译： 根据一个实施例，磁存储器包括磁阻元件。 该元件包括具有垂直于膜表面的可变磁化强度的第一磁性膜，具有垂直于膜表面的不变磁化的第二磁性膜，第一和第二磁性膜之间的非磁性膜，包括第三磁性膜的磁场施加层 具有与膜表面平行的磁化的磁性膜。 第三磁性膜将与膜表面平行的磁场施加到第一磁性膜。 当提供读取电流时，第三磁性膜的磁化强度大于当提供写入电流时第三磁性膜的磁化强度的大小。

    NONVOLATILE MEMORY DEVICE
    7.
    发明申请
    NONVOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号：US20140085969A1

    公开(公告)日：2014-03-27

    申请号：US13845478

    申请日：2013-03-18

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Daisuke SAIDA ,  Naoharu Shimomura ,  Minoru Amano ,  Eiji Kitagawa ,  Yoshishige Suzuki

    IPC分类号： G11C11/16

    CPC分类号： G11C11/161 ,  G11C11/1675

    摘要： According to one embodiment, a nonvolatile memory device includes a memory unit and a control unit. The memory unit includes a magnetic memory element which includes: a first and second ferromagnetic layers; and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The memory unit includes a magnetic field application unit configured to apply a magnetic field to the second ferromagnetic layer, the magnetic field having a component in a first in-plane direction perpendicular to a stacking direction. The control unit is electrically connected to the magnetic memory element, and is configured to implement a setting operation of changing a voltage between the first and the second ferromagnetic layers from a first set voltage to a second set voltage. The magnetic field applied by the magnetic field application unit satisfies the condition of Δ   H > ( H u + H dx )  ( H u + H dx - H ext ) ( H u + H dx + H ext ) . ( 1 )

    摘要翻译： 根据一个实施例，非易失性存储器件包括存储器单元和控制单元。 存储单元包括磁存储元件，其包括：第一和第二铁磁层; 以及设置在第一和第二铁磁层之间的第一非磁性层。 存储单元包括：磁场施加单元，被配置为向第二铁磁层施加磁场，该磁场具有垂直于堆叠方向的第一平面内方向的分量。 控制单元电连接到磁存储元件，并且被配置为实现将第一和第二铁磁层之间的电压从第一设定电压改变到第二设定电压的设置操作。 由磁场施加单元施加的磁场满足＆Dgr的条件; H H（H u + H dx）（H u + H dx-H ext）（H u + H dx + H ext）。 （1）

    Magnetic memory device
    9.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US09608199B1

    公开(公告)日：2017-03-28

    申请号：US15069691

    申请日：2016-03-14

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa

    IPC分类号： H01L43/08 ,  H01L29/82 ,  H01L43/10 ,  H01L21/20 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory device includes a stack structure including a first magnetic layer variable in magnetization direction, a second magnetic layer fixed in magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, the first magnetic layer including a first layer, a second layer, and a third layer between the first layer and the second layer and containing magnesium (Mg), iron (Fe), and oxygen (O), the second layer being between the nonmagnetic layer and the third layer, wherein a thickness of the second layer is greater than that of the first layer, and the thickness of the first layer is greater than that of the third layer.