公开(公告)号：US20200157382A1

公开(公告)日：2020-05-21

申请号：US16323514

申请日：2017-06-16

Applicant: KCTECH CO.,LTD.

Inventor： Han Teo PARK ,  Hyun Goo KONG ,  Sang Mi LEE

IPC: C09G1/02 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for polishing a tungsten barrier layer. A slurry composition for polishing a tungsten barrier layer according to an embodiment of the present invention comprises abrasive grains and a sulfur-containing amino acid, and can improve edge over erosion (EOE).

公开(公告)号：US20180355213A1

公开(公告)日：2018-12-13

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo KONG ,  Jung Hun KIM ,  Sang Mi LEE ,  Woo In LEE ,  Hee Sook CHEON ,  Sang Kyun KIM ,  Hao CUI ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/28 ,  H01L27/108 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/3212 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.