公开(公告)号：US10545104B2

公开(公告)日：2020-01-28

申请号：US15141453

申请日：2016-04-28

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Andrei V. Shchegrov ,  Michael S. Bakeman

IPC: G01N23/207

Abstract: Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.

公开(公告)号：US10794839B2

公开(公告)日：2020-10-06

申请号：US16283690

申请日：2019-02-22

Applicant: KLA-Tencor Corporation

Inventor： Aaron J. Rosenberg ,  Jonathan Iloreta ,  Thaddeus G. Dziura ,  Antonio Gellineau ,  Yin Xu ,  Kaiwen Xu ,  John Hench ,  Abhi Gunde ,  Andrei Veldman ,  Liequan Lee ,  Houssam Chouaib

IPC: G01N21/00 ,  G01N21/95 ,  H01L27/02 ,  H01L27/088 ,  H01L27/108 ,  G06T17/10 ,  G06T15/20 ,  G01N21/956 ,  H01L27/115 ,  G06F30/39

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.

公开(公告)号：US20180328868A1

公开(公告)日：2018-11-15

申请号：US15974962

申请日：2018-05-09

Applicant: KLA-Tencor Corporation

Inventor： Alexander Bykanov ,  Nikolay Artemiev ,  Joseph A. Di Regolo ,  Antonio Gellineau ,  Alexander Kuznetsov ,  Andrei Veldman ,  John Hench

IPC: G01N23/201 ,  H01L21/67 ,  G01N23/205 ,  H01L21/68 ,  G01N23/207 ,  H01L21/687

CPC classification number: G01N23/201 ,  G01N23/205 ,  G01N23/207 ,  G01N2223/6116 ,  H01L21/67259 ,  H01L21/67282 ,  H01L21/67288 ,  H01L21/681 ,  H01L21/68764

Abstract: Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.

公开(公告)号：US09494535B2

公开(公告)日：2016-11-15

申请号：US14690442

申请日：2015-04-19

Applicant: KLA-Tencor Corporation

Inventor： Abdurrahman Sezginer ,  John Hench ,  Michael S. Bakeman

IPC: G01N23/201 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01N2223/611 ,  G01N2223/645 ,  H01L22/12

Abstract: Methods and systems for performing measurements of semiconductor structures and materials based on scatterometry measurement data are presented. Scatterometry measurement data is used to generate an image of a material property of a measured structure based on the measured intensities of the detected diffraction orders. In some examples, a value of a parameter of interest is determined directly from the map of the material property of the measurement target. In some other examples, the image is compared to structural characteristics estimated by a geometric, model-based parametric inversion of the same measurement data. Discrepancies are used to update the geometric model of the measured structure and improve measurement performance. This enables a metrology system to converge on an accurate parametric measurement model when there are significant deviations between the actual shape of a manufactured structure subject to model-based measurement and the modeled shape of the structure.

Abstract translation: 介绍了基于散射测量数据进行半导体结构和材料测量的方法和系统。 散射测量测量数据用于基于检测到的衍射级的测量强度来生成测量结构的材料特性的图像。 在一些示例中，直接从测量对象的材料属性的映射确定感兴趣的参数的值。 在一些其他示例中，将图像与通过相同测量数据的几何，基于模型的参数反演估计的结构特征进行比较。 差异用于更新测量结构的几何模型，并提高测量性能。 当使基于模型的测量的制造结构的实际形状与结构的建模形状之间存在显着的偏差时，这使测量系统能够收敛于精确的参数测量模型。

公开(公告)号：US20200271595A1

公开(公告)日：2020-08-27

申请号：US16283690

申请日：2019-02-22

Applicant: KLA-Tencor Corporation

Inventor： Aaron J. Rosenberg ,  Jonathan Iloreta ,  Thaddeus G. Dziura ,  Antonio Gellineau ,  Yin Xu ,  Kaiwen Xu ,  John Hench ,  Abhi Gunde ,  Andrei Veldman ,  Liequan Lee ,  Houssam Chouaib

IPC: G01N21/95 ,  G06F17/50 ,  H01L27/02 ,  H01L27/088 ,  H01L27/108 ,  H01L27/115 ,  G06T17/10 ,  G06T15/20 ,  G01N21/956

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.

公开(公告)号：US20190049602A1

公开(公告)日：2019-02-14

申请号：US16101521

申请日：2018-08-13

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Antonio Arion Gellineau ,  Alexander Kuznetsov

IPC: G01T1/24 ,  G01N21/47 ,  G01N21/95

Abstract: Methods and systems for more efficient X-Ray scatterometry measurements of on-device structures are presented herein. X-Ray scatterometry measurements of one or more structures over a measurement area includes a decomposition of the one or more structures into a plurality of sub-structures, a decomposition of the measurement area into a plurality of sub-areas, or both. The decomposed structures, measurement areas, or both, are independently simulated. The scattering contributions of each of the independently simulated decomposed structures are combined to simulate the actual scattering of the measured structures within the measurement area. In a further aspect, measured intensities and modelled intensities including one or more incidental structures are employed to perform measurement of structures of interest. In other further aspects, measurement decomposition is employed to train a measurement model and to optimize a measurement recipe for a particular measurement application.

公开(公告)号：US20160320319A1

公开(公告)日：2016-11-03

申请号：US15141453

申请日：2016-04-28

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Andrei V. Shchegrov ,  Michael S. Bakeman

IPC: G01N23/207

Abstract: Methods and systems for performing overlay and edge placement errors of device structures based on x-ray diffraction measurement data are presented. Overlay error between different layers of a metrology target is estimated based on the intensity variation within each x-ray diffraction order measured at multiple, different angles of incidence and azimuth angles. The estimation of overlay involves a parameterization of the intensity modulations of common orders such that a low frequency shape modulation is described by a set of basis functions and a high frequency overlay modulation is described by an affine-circular function including a parameter indicative of overlay. In addition to overlay, a shape parameter of the metrology target is estimated based on a fitting analysis of a measurement model to the intensities of the measured diffraction orders. In some examples, the estimation of overlay and the estimation of one or more shape parameter values are performed simultaneously.

Abstract translation: 介绍了基于x射线衍射测量数据进行装置结构叠加和边缘放置误差的方法和系统。 基于在多个不同的入射角和方位角测量的每个x射线衍射级中的强度变化来估计度量目标的不同层之间的叠加误差。 叠加的估计涉及通用顺序的强度调制的参数化，使得通过一组基本函数描述低频形状调制，并且通过包括表示覆盖的参数的仿射循环函数来描述高频覆盖调制。 除了覆盖之外，基于测量模型的拟合分析与测量的衍射级的强度来估计度量目标的形状参数。 在一些示例中，同时执行叠加的估计和一个或多个形状参数值的估计。

公开(公告)号：US11073487B2

公开(公告)日：2021-07-27

申请号：US15974962

申请日：2018-05-09

Applicant: KLA-Tencor Corporation

Inventor： Alexander Bykanov ,  Nikolay Artemiev ,  Joseph A. Di Regolo ,  Antonio Gellineau ,  Alexander Kuznetsov ,  Andrei Veldman ,  John Hench

IPC: G01N23/02 ,  G01N23/201 ,  H01L21/67 ,  G01N23/205 ,  G01N23/207 ,  H01L21/68 ,  H01L21/687

Abstract: Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.

公开(公告)号：US10983227B2

公开(公告)日：2021-04-20

申请号：US16101521

申请日：2018-08-13

Applicant: KLA-Tencor Corporation

Inventor： John Hench ,  Antonio Arion Gellineau ,  Alexander Kuznetsov

IPC: G01T1/24 ,  G01N21/47 ,  G01N21/95 ,  G01N23/201

Abstract: Methods and systems for more efficient X-Ray scatterometry measurements of on-device structures are presented herein. X-Ray scatterometry measurements of one or more structures over a measurement area includes a decomposition of the one or more structures into a plurality of sub-structures, a decomposition of the measurement area into a plurality of sub-areas, or both. The decomposed structures, measurement areas, or both, are independently simulated. The scattering contributions of each of the independently simulated decomposed structures are combined to simulate the actual scattering of the measured structures within the measurement area. In a further aspect, measured intensities and modelled intensities including one or more incidental structures are employed to perform measurement of structures of interest. In other further aspects, measurement decomposition is employed to train a measurement model and to optimize a measurement recipe for a particular measurement application.

公开(公告)号：US20150300965A1

公开(公告)日：2015-10-22

申请号：US14690442

申请日：2015-04-19

Applicant: KLA-Tencor Corporation

Inventor： Abdurrahman Sezginer ,  John Hench ,  Michael S. Bakeman

IPC: G01N23/201

CPC classification number: G01N23/201 ,  G01N2223/611 ,  G01N2223/645 ,  H01L22/12

Abstract: Methods and systems for performing measurements of semiconductor structures and materials based on scatterometry measurement data are presented. Scatterometry measurement data is used to generate an image of a material property of a measured structure based on the measured intensities of the detected diffraction orders. In some examples, a value of a parameter of interest is determined directly from the map of the material property of the measurement target. In some other examples, the image is compared to structural characteristics estimated by a geometric, model-based parametric inversion of the same measurement data. Discrepancies are used to update the geometric model of the measured structure and improve measurement performance. This enables a metrology system to converge on an accurate parametric measurement model when there are significant deviations between the actual shape of a manufactured structure subject to model-based measurement and the modeled shape of the structure.

Abstract translation: 介绍了基于散射测量数据进行半导体结构和材料测量的方法和系统。 散射测量测量数据用于基于检测到的衍射级的测量强度来生成测量结构的材料特性的图像。 在一些示例中，直接从测量对象的材料属性的映射确定感兴趣的参数的值。 在一些其他示例中，将图像与通过相同测量数据的几何，基于模型的参数反演估计的结构特征进行比较。 差异用于更新测量结构的几何模型，并提高测量性能。 当使基于模型的测量的制造结构的实际形状与结构的建模形状之间存在显着的偏差时，这使测量系统能够收敛于精确的参数测量模型。